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Zeitschrift für Physikalische Chemie

International journal of research in physical chemistry and chemical physics

Ed. by Weitzel, Karl-Michael

12 Issues per year


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AES and RBS Characterization of Anodic Oxide Films on Al-Ta Amorphous Alloys

Z. Werner / A. Jaskiewicz / M. Pisarek / M. Janik-Czachor / M. Barlak

Citation Information: Zeitschrift für Physikalische Chemie. Volume 219, Issue 11/2005, Pages 1461–1479, ISSN (Print) 0942-9352, DOI: 10.1524/zpch.2005.219.11.1461, September 2009

Publication History

Received:
May 12, 2005
Accepted:
August 26, 2005
Published Online:
2009-09-25

Abstract

Anodic layers grown on Al-Ta sputter deposited amorphous alloys were studied by electrochemical methods, AES, and RBS. The alloy composition ranged from Al90Ta10 to Al70Ta30. It has been found that an increase of breakdown potential Enp′ caused by refractory metal content extends over a wide concentration range from 0.01 M up to 1 M NaCl.

AES measurements have shown that Ta remains in an oxidized state over the whole thickness of the anodic layer thus confirming the model of Ta acting as a passivity promoter rather than a dissolution moderator.

RBS results clearly demonstrate that in low Ta content layers a thin alumina film is formed on the top surface of the anodic layer. For higher Ta content only a depletion in Ta is observed on the surface. The latter result differs from those obtained previously by other authors and may be caused by differences in experimental conditions and/or the alloy structure.

The role of refractory metals in the passivity of Al-based amorphous alloys is discussed.

Keywords: Anodic Films; Amorphous Alloys; Al-Ta Alloys

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