Abstract
As a material with high dielectric constant, barium titanate has attractive electrical properties that have been extensively studied and reported. On the valencecompensated semiconduction papers led to the positive temperature coefficient (PTC) of the resistance effect found in doped BaTiO3. Also, this material have a strong porosity and his fractal nature influenced on microelectronic properties of material. The framework of this chapter describes the fractal correction of Schottky potential barriers within Heywang’s model. For it is used Tarasov’s fractional calculus with the concept of mass fractal dimension. Also, we involved the complex fractal correction in Schottky potential through relative dielectric permittivity εr and working temperature. This is confirmed by appropriate experimental conditions and the analysis of the fractal surface construction.
