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BY-NC-ND 3.0 license Open Access Published by De Gruyter July 14, 2015

AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

N. Dyakonova EMAIL logo , D.B. But , D. Coquillat , W. Knap , C. Drexler , P. Olbrich , J. Karch , M. Schafberger , S.D. Ganichev , G. Ducournau , C. Gaquiere , M.−A. Poisson , S. Delage , G. Cywinski and C. Skierbiszewski
From the journal Opto-Electronics Review

Abstract

We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm2. The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.

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Published Online: 2015-7-14
Published in Print: 2015-9-1

© 2015 SEP, Warsaw

This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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