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BY-NC-ND 3.0 license Open Access Published by De Gruyter July 14, 2015

AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

N. Dyakonova EMAIL logo , D.B. But , D. Coquillat , W. Knap , C. Drexler , P. Olbrich , J. Karch , M. Schafberger , S.D. Ganichev , G. Ducournau , C. Gaquiere , M.−A. Poisson , S. Delage , G. Cywinski and C. Skierbiszewski
From the journal Opto-Electronics Review


We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm2. The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.


1. W. Knap and M. Dyakonov, “Field effect transistors for terahertz applications”, in Handbook of Terahertz Technology, pp. 121-155, Woodhead Publishing, Waterloo, Canada, 2013.10.1533/9780857096494.1.121Search in Google Scholar

2. A. Gutin, V. Kachorovskii, A. Muraviev, and M. Shur, “Plasmonic terahertz detector response at high intensities”, J. Appl. Phys. 112, 014508-5 (2012).Search in Google Scholar

3. S. Preu, H. Lu, M. Sherwin, and A.C. Gossard, “Detection of nanosecond−scale, high power THz pulses with a field effect transistor”, Rev. Sci. Instrum. 83, 053101-6 (2012).Search in Google Scholar

4. D.B. But, C. Drexler, M.V. Sakhno, N. Dyakonova, O. Drachenko, F.F. Sizov, A. Gutin, S.D. Ganichev, and W. Knap, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities”, J. Appl. Phys. 115, 164514-8 (2014).Search in Google Scholar

5. A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D.B. Veksler, S. Rumyantsev, M.S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN Transistors”, Electron. Lett. 42, 1342-1343 (2006).Search in Google Scholar

6. N. Pala, D. Veksler, A. Muravjov, W. Stillman, R. Gaska, and M.S. Shur, “Resonant detection and modulation of terahertz radiation by 2DEG plasmons in GaN grating−gate structures”, IEEE Proc. Sensors Conf., Atlanta, pp. 291-292, 2007.10.1109/ICSENS.2007.4388462Search in Google Scholar

7. S.D. Ganichev, Y.V. Terentev, and I.D. Yaroshetskii, “Photon−drag photodetectors for the farIR and submillimeter regions”, Pisma Zh. Tekh. Fiz. 11, 46-48 (1985) IN RUSSIAN; Sov. Tech. Phys. Lett. 11, 20 (1985).Search in Google Scholar

8. M.I. Dyakonov and M.S. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two−dimensional electronic fluid”, IEEE T. Electron Devices 43, 380-387 (1996).10.1109/16.485650Search in Google Scholar

9. M.I Dyakonov, “Generation and detection of Terahertz radiation by field effect transistors”, C.R. Physique 11, 413-420 (2010).10.1016/j.crhy.2010.05.003Search in Google Scholar

10. M. Sakowicz, M.B. Lifshits, O.A. Klimenko, F. Schuster, D. Coquillat, F. Teppe, and W. Knap, “Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects”, J. Appl. Phys. 110, 054512-6 (2011).Search in Google Scholar

11. K.S. Romanov and M.I. Dyakonov, “Theory of helicity−sensitive terahertz radiation detection by field effect transistors”, Appl. Phys. Lett. 102, 153502-4 (2013).Search in Google Scholar

12. D.B. Veksler, A.V. Muravjov, V.Yu. Kachorovskii, T.A. Elkhatib, K.N. Salama, X.−C. Zhang, and M.S. Shur, “Imaging of field−effect transistors by focused terahertz radiation”, Solid−State Electron. 53, 571 (2009).Search in Google Scholar

13. C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K.Karpierz, Y. Mityagin, M.B. Lifshits, F. Teppe, O. Klimenko, Y.M. Meziani, W. Knap, and S.D. Ganichev, “Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities”, J. Appl. Phys. 111(12), 124504-6 (2012).10.1063/1.4729043Search in Google Scholar

14. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.−Q. Lu, R. Gaska, M.S. Shur, G. Simin, X. Hu, M. Asif Khan, C.A. Saylor, and L.C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors”, J. Appl. Phys. 91, 9346-9353 (2002).Search in Google Scholar

15. S. Preu, S. Kim, R. Verma, P.G. Burke, N.Q. Vinh, M.S. Sherwin, and A.C. Gossard, “Terahertz detection by a homodyne field effect transistor multiplicative mixer”, IEEE T. Terahertz Sci. Techn. 2, 278-283 (2012). Search in Google Scholar

Published Online: 2015-7-14
Published in Print: 2015-9-1

© 2015 SEP, Warsaw

This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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