Abstract
Photoelectrochemical cells (PECs), composed of different epitaxial n-Si photoanodes coated with evaporated metal film of Ni, Pt, Ni/Pt and immersed in solution with redox couple Br2/Br- or Fe(NC)36Fe(CN)46- were investigated. The open circuit photovoltage and short circuit curent density of these PECs under optimum conditions by illuminating with a bromine-tungsten lamp (65 mW/cm2), are 0.494 V and 45.8 mA/cm2, respectively. By using a p/n+ junction for the epitaxial silicon and the Schottky barrier effect formed at the silicon-metal interface, a much higher conversion efficiency of optical to electrical energy up to 12.3% could be achieved
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