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BY-NC-ND 3.0 license Open Access Published by De Gruyter June 2, 2014

Characteristics of Photoelectrochemical Cells Based on n/n+-Si and p/n+-Si Photoanodes Modified by Metal Films

  • S. Wang , G. Li , H. Li and N. Getoff


Photoelectrochemical cells (PECs), composed of different epitaxial n-Si photoanodes coated with evaporated metal film of Ni, Pt, Ni/Pt and immersed in solution with redox couple Br2/Br- or Fe(NC)36Fe(CN)46- were investigated. The open circuit photovoltage and short circuit curent density of these PECs under optimum conditions by illuminating with a bromine-tungsten lamp (65 mW/cm2), are 0.494 V and 45.8 mA/cm2, respectively. By using a p/n+ junction for the epitaxial silicon and the Schottky barrier effect formed at the silicon-metal interface, a much higher conversion efficiency of optical to electrical energy up to 12.3% could be achieved

Received: 1990-1-26
Published Online: 2014-6-2
Published in Print: 1990-5-1

© 1946 – 2014: Verlag der Zeitschrift für Naturforschung

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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