Abstract
A novel method for the preparation of biaxial textured nickel oxide on commercially available nickel via a modified surface oxidation epitaxy (SOE) process has been developed. Following studies of different heat-treatment procedures for both texturing of nickel and for the fabrication of nickel oxide the following method was found to yield the best results. Nickel was first textured under an argon — hydrogen atmosphere at 1000°C for 120 min, then the temperature was lowered to 800°C and the atmosphere was changed to argon with 3 ppm oxygen. Smooth and crack free c-axis textured and a–b aligned NiO buffer layers with an out-of-plane texture of 7.8° and an in-plane texture of 9.4° were successfully produced. Higher oxygen partial pressure and temperatures resulted in increased surface roughness and excessive grain growth.
[1] D.P. Norton et al., Science 274, 755 (1996) http://dx.doi.org/10.1126/science.274.5288.75510.1126/science.274.5288.755Search in Google Scholar
[2] T.G. Woodcock, J.S. Abell, T.C. Shields, M.G. Hall, Physica C 372–376 (SUPPL. 2), 863 (2002) http://dx.doi.org/10.1016/S0921-4534(02)00874-210.1016/S0921-4534(02)00874-2Search in Google Scholar
[3] T.G. Woodcock, J.S. Abell, M.G Hall, J. Microscopy 205, 231 (2002) http://dx.doi.org/10.1046/j.1365-2818.2002.00991.x10.1046/j.1365-2818.2002.00991.xSearch in Google Scholar
[4] T. Watanabe, K. Matsumoto, T. Maeda, T. Tanigawa, I. Hirabayashi, Physica C 357–360 (SUPPL. 1), 914 (2001) http://dx.doi.org/10.1016/S0921-4534(01)00442-710.1016/S0921-4534(01)00442-7Search in Google Scholar
[5] K. Masumoto et al., IEEE Trans. Appl. Supercond. 9, 1539 (1999) http://dx.doi.org/10.1109/77.78468710.1109/77.784687Search in Google Scholar
[6] C.F. Liu et al., IEEE Trans. Appl. Supercond. 9, 1471 (1999) http://dx.doi.org/10.1109/77.78467010.1109/77.784670Search in Google Scholar
[7] A. Kursumovic et al., Physica C 385, 337 (2003) http://dx.doi.org/10.1016/S0921-4534(02)02016-610.1016/S0921-4534(02)02016-6Search in Google Scholar
[8] R. Hühne et al., J. Phys. D Appl. Phys. 36, 1053 (2003) http://dx.doi.org/10.1088/0022-3727/36/9/30110.1088/0022-3727/36/9/301Search in Google Scholar
[9] M.J. Graham, M.J. Cohen, Electrochem. Soc. 120, 879 (1972) http://dx.doi.org/10.1149/1.240436010.1149/1.2404360Search in Google Scholar
[10] M.J. Graham, R.J. Hussey, M.J. Cohen Electrochem. Soc. 120, 1523 (1973) http://dx.doi.org/10.1149/1.240329610.1149/1.2403296Search in Google Scholar
[11] K. Matsumoto et al., Physica C 335, 39 (2000) http://dx.doi.org/10.1016/S0921-4534(00)00139-810.1016/S0921-4534(00)00139-8Search in Google Scholar
[12] Z. Lockman, X. Qi, A. Berenov, R. Nast, W. Goldacker, J. MacManus-Driscoll, Physica C 351 34 (2001) http://dx.doi.org/10.1016/S0921-4534(00)01686-510.1016/S0921-4534(00)01686-5Search in Google Scholar
[13] J. Yang et al., Physica C 412–414, 844 (2004) http://dx.doi.org/10.1016/j.physc.2004.01.10910.1016/j.physc.2004.01.109Search in Google Scholar
[14] A. Kursumovic, R. Hühne, R. Tomov, B. Holzapfel, B.A. Glowacki, J.E. Evetts, Physica C 405, 219 (2004) http://dx.doi.org/10.1016/j.physc.2004.01.02710.1016/j.physc.2004.01.027Search in Google Scholar
[15] O. Staller, D. Holzmann, G. Gritzner, P. Diko, D. Mikolaj, F. Kováč, Cent. Eur. J. Chem. (accepted) Search in Google Scholar
[16] J.-K. Chung, W.-J. Kim, J. Tal, C.J. Kim, Physica C 463–465, 619 (2007) 296 Search in Google Scholar
© 2008 Versita Warsaw
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.