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BY-NC-ND 3.0 license Open Access Published by De Gruyter Open Access February 9, 2013

Structural properties of transparent Ti-V oxide semiconductor thin films

  • Karolina Sieradzka EMAIL logo , Danuta Kaczmarek , Jerzy Morgiel , Jaroslaw Domaradzki , Eugeniusz Prociow and Bogdan Adamiak
From the journal Open Physics


Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO2-V2O3-V2O5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 105 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.

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Published Online: 2013-2-9
Published in Print: 2013-2-1

© 2013 Versita Warsaw

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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