Abstract
This paper presents the methods of fabricating narrow parallel submicrometric stripes in silicon dioxide and a resist layer. The experiments were conducted by two techniques: double patterning lithography and double exposure lithography. In addition to the above mentioned processes, mask translation was applied. For all conducted experiments, chrome masks and a 405 nm line of the high pressure mercury lamp of an MA-56 Mask Aligner System were used. The main aim of the performed tests was to establish the utility and the possible applications of the methods used.
[1] R. Doering, Y. Nishi, Handbook of Semiconductor Manufacturing Technology, 2nd edition (CRC Press, Taylor and Francic Group, New York, 2008) Search in Google Scholar
[2] W. M. Moreau, Semiconductor Lithography, Principles, practices, and materials, 1st edition (Plenum Press, New York and London, 1988) http://dx.doi.org/10.1007/978-1-4613-0885-010.1007/978-1-4613-0885-0Search in Google Scholar
[3] Y. Wei, R. L. Brainard, Advanced Processes for 193-nm Immersion Lithography, 1st edition (SPIE, Bellingham, Washington, 2009) http://dx.doi.org/10.1117/3.82023310.1117/3.820233Search in Google Scholar
[4] H. J. Levinson, Principles of Lithography, 3rd edition (SPIE, Bellingham, Washington, 2010) 10.1117/3.865363Search in Google Scholar
[5] M. Dusa, W. Arnold, A. Pici, ISSM 2005 IEEE International Symposium on Semiconductor Manufacturing, 13–15 Sept. 2005, 177 Search in Google Scholar
[6] S. Lee. et al., Optical Microlithography XXIProc. of SPIE 6924, 69242A (2008) Search in Google Scholar
© 2013 Versita Warsaw
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
