Abstract
As an important analytical method for thin film growth, spectroscopic ellipsometry plays an active role in investigating thin film growth mechanism of molecular beam epitaxial especially under in-situ and real-time environment. In this paper, the dynamic data presenting p-6P molecule film growth on mica substrates at different evaporation temperatures have been obtained under ultra-high vacuum by a self-designed in-situ and real-time spectroscopic ellipsometry system. It is shown that the strength of p-6P molecular ellipsometry signal increases as the amount of molecule deposited increases, and there is a negative characteristic peak at 3.9 eV, caused by electron transition of the p-6P molecule from the highest occupied molecular orbital to the lowest unoccupied molecular orbital, which can be considered to be an optical characteristics of p-6P molecule.
Kurzfassung
Als ein wichtiges analytisches Verfahren für das Dünnschichtwachstum gewinnt die spektroskopische Ellipsometrie zunehmende Bedeutung in der Untersuchung des epitaktischen Wachstums von Molekülsträngen, insbesonders in in-situ und real-time Umgebungen. In dem vorliegenden Beitrag wird über eine Studie berichtet, in der die dynamischen Daten, die das p-6P-Molekülwachstum auf Glimmer-Substraten zeigen, mittels eines eigens entwickelten in-situ und real-time spektroskopischen Ellipsometriesystems im Ultra-Hoch-Vakuum gewonnen wurden. Es wird gezeigt, dass die Signalstärke der Ellipsometrie mit der Menge an abgelagerten Molekülen zunimmt und dass sich eine negative Charakteristik als Peak bei 3,9 eV ausbildet, die durch den Elektronenübergang im p-6P-Molekül von der höchsten zur niedrigsten Schale verursacht wird und die als optische Charakteristik des p-6P-Moleküls angesehen werden kann.
References
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