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Licensed Unlicensed Requires Authentication Published by De Gruyter June 11, 2013

Influence of Fe–F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films

  • F. Paul , A. Giere , W. Menesklou , J. R. Binder , P. Scheele , R. Jakoby and J. Haußelt

Abstract

The influence of Fe acceptor and Fe – F acceptor – donor co-doping on the dielectric response of screen-printed Ba0.6 Sr0.4 TiO3 thick-films on alumina substrates has been investigated. The Ba0.6 Sr0.4 TiO3 powders were synthesized by freeze-drying of sols. Permittivity, dielectric loss, and tunability were investigated at kHz frequencies with a planar metal-insulator-metal capacitor structure, and at GHz frequencies up to 40 GHz using coplanar waveguide structures. Pure acceptor doping by Fe was found to have a distinct influence on permittivity and dielectric loss-factor at kHz-frequencies and at GHz frequencies due to an internal bias field and pairs of associated defects. Co-doping with F significantly suppresses the influence of the internal bias field and defect-associates at low and microwave frequencies. The commutation quality factor at 10 GHz and Eeff = 5.8 V μm-1 was increased by co-doping the thick-films with Fe and F. Such doped Ba0.6 Sr0.4 TiO3 films show a high potential for tunable microwave applications.


* Correspondence address, Dr. Florian Paul, University of Freiburg, Institute of Microsystems Engineering IMTEK, Georges-Köhler-Allee 102, D-79110 Freiburg, Germany, Tel.: +49 761 203 75 53, Fax: +49 761 203 75 52, E-mail:

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Received: 2008-4-4
Accepted: 2008-7-15
Published Online: 2013-06-11
Published in Print: 2008-10-01

© 2008, Carl Hanser Verlag, München

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