Accessible Requires Authentication Published by De Gruyter November 25, 2016

Synthesis and field-emission characteristics of SiC nanowire forest

Dongju Lee and Sung Ho Song

Abstract

Silicon carbide nanowire forests were successfully synthesized via a vapor–liquid–solid process. The synthesized SiC nanowires had planar stacking faults perpendicular to the nanowire axis, diameters of 70 – 180 nm and lengths of tens to hundreds of micrometers, and grew along the [111] orientation. The SiC nanowire forest was characterized in a field emitter application and exhibited excellent field emission properties. Furthermore, we carried out in-depth investigations into the growth mechanism of the SiC nanowires through adjusting the growth conditions.


*Correspondence address, Prof. Sung Ho Song, Division of Advanced Materials Engineering, Kongju National University, Chungnam, 330 – 717, Republic of Korea, Tel.: +82-41-521-9379, Fax: +82-41-521-9371, E-mail:

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Received: 2016-06-29
Accepted: 2016-09-06
Published Online: 2016-11-25
Published in Print: 2016-12-08

© 2016, Carl Hanser Verlag, München