Abstract
Global heat transfer computations were performed for the investigation of thermal stress in a Czochralski silicon crystal. The temperature distribution, thermal stress properties including maximum shear stress and von Mises stress distributions at two different axial crystal positions have been investigated with the help of heat transfer simulations. By analyzing the obtained results, the thermal stress maxima during the Czochralski growth process can be controlled by applying optimal crystal rotation of 8 rpm and counter crucible rotations of 5 and 15 rpm for a crystal position of 100 mm and 300 mm. This shows that by applying optimal crystal and counter crucible rotations throughout the growth process, the thermal stress maxima of a growing crystal can be reduced.
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