Pavlo Stakhira, Georgij Pakhomov, Vlad Cherpak, Dmitro Volynyuk, Grzegorz Luka, Marek Godlewski, Elżbieta Guziewicz, Zenon Hotra
July 22, 2010
Abstract
The introduction of an ultrathin zinc oxide (ZnO) layer formed by the atomic layer deposition (ALD) technique was found to improve the operation parameters of nickel phthalocyanine (NiPc) based photovoltaic cells with a transparent bottom electrode, indium tin oxide (ITO). This improvement is attributed to several reasons, such as I) increase of photovoltaic yield in ITO/p-NiPc/n-ZnO/Al cells incorporating a hybrid heterojunction as compared to single-layer ITO/NiPc/Al cells, II) enhancement of the overall spectral response in the double-layer cells and III) extension of long-term operational stability.