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Volume 7 Issue 2 - Topical Issue: Solid state surfaces and interfaces

June 2009

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Open Access April 26, 2009

Solid state surfaces and interfaces

Reinhard Denecke, Józef Korecki, Emil Pinčik, Pavel Jelinek, Krzysztof Malarz

Page range: 207-208

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Open Access April 26, 2009

Theoretical modelling of surface phonons

Gyaneshwar Srivastava, Huseyin TÃ¼tÃ¼ncÃ¼

Page range: 209-219

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Abstract

We present a mini review of progress made towards theoretical modelling of surface phonons. We outline the essential ingredients of two theoretical methods, viz. an adiabatic bond charge method for semiconductor surfaces and the ab-initio density-functional perturbation method for solid surfaces in general. From the results of theoretical calculations we establish trends and criteria for the existence of localized phonon modes on group-IV(001) and III-V(110) semiconductor surfaces. We further obtain signatures of characteristic vibrational modes which develop during dissociative molecular adsorption on Si(001) surfaces. The results are compared with available experimental measurements. Some remarks are forwarded regarding manipulation of surface phonon modes for scientific advances and technological applications.

Open Access April 26, 2009

Study of the island morphology at the early stages of Fe/Mo(110) MBE growth

Dmytro Goykolov, Miroslav Kotrla

Page range: 220-226

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Abstract

We present theoretical study of morphology of Fe islands grown at Mo(110) surface in submonolayer MBE mode. We utilize atomistic SOS model with bond counting, and interactions of Fe adatom up to third nearest neighbors. We performed KMC simulations for different values of adatom interactions and varying temperatures. We have found that, while for the low temperature islands are fat fractals, for the temperature 500 K islands have faceted rhombic-like shape. For the higher temperature, islands acquire a rounded shape. In order to evaluate qualitatively morphological changes, we measured average aspect ratio of islands. We calculated dependence of the average aspect ratio on the temperature, and on the strength of interactions of an adatom with neighbors.

Open Access April 26, 2009

Passivation of defect states in surface and edge regions on pn-junction Si solar cells by use of hydrogen cyanide solutions

Masao Takahashi, Takeru Shishido, Hitoo Iwasa, Hikaru Kobayashi

Page range: 227-231

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Abstract

The local photovoltage of the pn-junction single-crystalline silicon solar cells observed by spot light scanning gradually decreases in the vicinity of edges. The energy conversion efficiency is increased by shadowing the edge regions where the local photovoltage is lower, showing that the defect density is high in the edge regions. From the analysis of the local photovoltage, the spacial distribution of defect states is obtained. The cyanide method, i. e., immersion of solar cells in HCN solutions at room temperature, increases the local photovoltage and increases the energy conversion efficiency.

Open Access April 26, 2009

Nano structure of low crystallinity carbon materials analyzed by using high energy X-ray diffraction

Kyoichi Oshida, Tatsuo Nakazawa, Kozo Osawa, Morinobu Endo

Page range: 232-236

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Abstract

In this study, we tried to characterize a kind of low crystallinity carbon materials. The structure of polyparaphenylene(PPP)-based carbon was analyzed by means of high energy X-ray diffraction using the apparatus of SPring-8. The experimental results revealed the existence of basic structural units (BSU) in the highly disordered materials like PPP-based carbon. It is thought that the PPP-based carbons consist of small turbostratic particles, which have a few piled up poly-aromatic layers. The structure of the PPP-based carbon which seemed to be amorphous was estimated to have hexagonal carbon layers with the size of up to 1 nm. The pores in the PPP-based carbon seem to be clearances formed among the BSUs and amorphous carbon. The pore size of PPP-based carbon was estimated from the result of N2 absorption measurement. The experimental results suggested that the lithium ion charge mechanism in the PPP-based carbon differs from that in graphite.

Open Access April 26, 2009

Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

Peter Bury, Hikaru Kobayashi, Masao Takahashi, Kentaro Imamura, Peter Sidor, FrantiÅ¡ek ÄŒernobila

Page range: 237-241

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Abstract

Ultrathin silicon dioxide (SiO2) layers formed on Si substrate with nitric acid have been investigated using both acoustic deep-level transient spectroscopy (A-DLTS) and electrical methods to characterize the interface states. The set of SiO2/Si structures formed in different conditions (reaction time, concentrations of nitric acid (HNO3), and SiO2 thickness [3â€“9 nm]) was prepared. The leakage current density was decreased by post-oxidation annealing (POA) treatment at 250Â°C in pure nitrogen for 1 h and/or post-metallization annealing (PMA) treatment at 250Â°C in a hydrogen atmosphere for 1 h. All structures of the set, except electrical investigation, current-voltage (I - V), and capacitance â€” voltage (C - V) measurements, were investigated using A-DLTS to find both the interface states distribution and the role of POA and/or PMA treatment on the interface-state occurrence and distribution. The evident decreases of interface states and shift of their activation energies in the structures with PMA treatment in comparison with POA treatment were observed in most of the investigated structures. The results are analyzed and discussed.

Open Access April 26, 2009

Orientation relationship and interfaces in Ni and Co-YSZ cermets prepared from directionally solidified eutectics

Angel Larrea, Miguel Laguna-Bercero, JosÃ© PeÃ±a, Rosa Merino, VÃctor Orera

Page range: 242-250

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Abstract

Textured Ni-YSZ and Co-YSZ (YSZ: cubic yttria stabilized zirconia) cermets prepared by reduction of directionally solidified NiO-YSZ and CoO-YSZ oxide eutectics respectively display a self-organized microstucture formed by âˆ¼400 nm wide alternating lamellae of YSZ and porous metal suitable for electrochemical applications. The electrochemical properties of the cermets depend on their microstructure. We have analyzed the orientation relationships and interfaces both of the oxide composites and cermets using Scanning Electron Microscopy, Transmission Electron Microscopy, X-ray pole figures and Electron Back-Scattering Diffraction. In spite of the similar crystal structure, growth habits and orientation relationships of NiO-YSZ and CoO-YSZ are different. Also the crystallographic behaviour, when cermets are produced, differs. However the metal-YSZ interfaces are about the most stable ones giving good metal-ceramic adhesion. Due to their lamellar microstructure and good metal-ceramic adhesion these composites present long-term stability at working conditions, which makes them good candidates to be used as anodes in solid oxide fuel cells or electrolyzers.

Open Access April 26, 2009

Two-gap superconductivity in the Fe-1111 superconductor LaFeAsO1âˆ’x Fx: A point-contact Andreev-reflection study

Renato Gonnelli, Mauro Tortello, Dario Daghero, Giovanni Ummarino, Valeri Stepanov, Jun Kim

Page range: 251-256

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Abstract

Point-contact Andreev-reflection (PCAR) experiments were performed in the Fe-1111 layered superconductor LaFeAsO0.9F0.1 with resistive T con âˆ¼ 27 K. The observation of two pairs of peaks in the low-temperature Andreev-reflection spectra clearly indicates the presence of two order parameters. The behavior of the two gaps as a function of temperature, obtained by fitting the conductance curves by means of the generalized two-band Blonder-Tinkham-Klapwijk model, shows some anomalies. A theoretical analysis performed within the two-band Eliashberg theory with a generic electron-boson coupling can reproduce the low-temperature value of the two gaps but generally fails in giving a satisfactory fit of their overall temperature dependence, indicating the rich and complex physics of these newly discovered superconductors.

Open Access April 26, 2009

Magnetism of free and supported clusters: a comparative study

OndÅ™ej Å ipr, JÃ¡n MinÃ¡r, Hubert Ebert

Page range: 257-263

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Abstract

The presented work investigates the differences in magnetic properties of free and supported clusters via ab-initio calculations. The electronic structure of the clusters was calculated using a spin polarized relativistic multiple-scattering Greenâ€™s function formalism. We focus on Fe clusters of 2â€“9 atoms, either free or supported by Ni(001), and on Co clusters of 2â€“7 atoms, either free or supported by Au(111). For the supported clusters, the spin and orbital magnetic moments depend on the cluster size nearly monotonically, while for the free clusters large quasi-oscillations of magnetic moments with the cluster size were observed. Similarly, for supported clusters, the local spin magnetic moments decrease nearly linearly with increasing coordination number, while for free clusters of the same size range the trend is much more complicated. These findings are consistent with the fact that the spectral distribution function contains much sharper features for free clusters than for supported clusters.

Open Access April 26, 2009

Fractal surface analysis of Zircaloy-4 SEM micrographs using the time-series method

Viorel Paun

Page range: 264-269

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Abstract

The SEM microfractographies of Zircaloy-4 are studied by the time-series method. We first develop a computer application which associates a time series to each SEM micrograph. Furthermore, we will apply the phase space embedding technique to reconstruct the attractor and to compute the autocorrelation dimension. Using the fractal analysis technique, the SEM microfractographies of the fracture surface of the Zircaloy-4 samples have been analyzed.

Open Access April 26, 2009

Surface and interface properties of thin pentacene and parylene layers

Andrej Vincze, Ján Jakabovič, Rudolf Srnánek, Alexander Šatka, Jaroslav Kovac

Page range: 270-278

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Abstract

To improve Organic Thin Film Transistor (OTFT) properties we study OTFT semiconductor/dielectric interfacial properties via examination of the gate dielectric using thin Parylene C layer. Structural and morphology properties of pentacene layers deposited on parylene layer and SiO2/Si substrate structure were compared. The surface morphology was investigated using atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM topography of pentacene layer in non-contact mode confirmed the preferable pentacene grain formation on parylene surface in dependence on layer thickness. The distribution of chemical species on the surfaces and composition depth profiles were measured by secondary ion mass spectroscopy (SIMS) and surface imaging. The depth profiles of the analyzed structures show a homogenous pentacene layer, characterized with C or C2 ions. Relatively sharp interface between pentacene and parylene layers was estimated by characteristic increased intensity of CCl ions peak. For revealing the pentacene phases in the structures the Micro-Raman spectroscopy was utilized. Conformal coatings of parylene and pentacene layers without pinholes resulted from the deposition process as was confirmed by SIMS surface imaging. For the pentacene layers thicker than 20 nm, both thin and bulk pentacene phases were detected by Micro-Raman spectroscopy, while for the pentacene layer thickness of 5 and 10 nm the preferable thin phase was detected. The complete characterisation of pentacene layers deposited on SiO2 and parylene surface revealed that the formation of large grains suggests 3D pentacene growth at parylene layer with small voids between grains and more than one monolayer step growth. The results will be utilized for optimization of the deposition process.

Open Access April 26, 2009

Bromine adsorption on Ge(001) surface: comparative study for coverages of 0.25, 0.5, 0.75 and 1 monolayer

PaweÅ‚ MikoÅ‚ajczyk, Barbara Stankiewicz

Page range: 279-285

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Abstract

We present theoretical analysis of bromine adsorption on the Ge(001)-p(1Ã—2) surface. Bromine adsorbs dissociatively at the Ge(001) surface and the adlayer of bromine develops ordered structures of adatoms bound to substrate dimers. We analyse atomic configurations of the Ge(001) surface covered by 0.25, 0.5, 0.75 and 1 monolayer of bromine. Various stable surface structures, found in calculations, are presented and their energies are compared. Simulated STM images are also discussed for the considered configurations.

Open Access April 26, 2009

Hydrogen adsorption on Pd(133) surface

Agnieszka Tomaszewska, ZdzisÅ‚aw StÄ™pieÅ„

Page range: 286-290

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Abstract

An approach based on measurements of the total energy distribution (TED) of field emitted electrons is used in order to examine properties of the Pd(133) from the aspect of hydrogen adsorption. The most favourable sites offered to a hydrogen atom to be adsorbed are indicated and an attempt to ascribe the peaks of the enhancement factor R in the TED spectrum to the specific adsorption sites is made.

Open Access April 26, 2009

STM investigation of cobalt silicide nanostructuresâ€™ growth on Si(111)-(âˆš19 Ã— âˆš19) substrate

Maciej Cegiel, Maciej Bazarnik, Ryszard Czajka

Page range: 291-294

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Abstract

Continuing miniaturization of electronic devices necessarily requires assembly of several different objects or devices in a small space. Therefore, besides thin films growth, the possibility of fabricating wires and dots [1, 2] at the nanometre scale composed of metal silicides is of the top interest. This report is about the STM/STS investigation of cobalt silicidesâ€™ nanostructures created on Si(111)-(âˆš19 Ã— âˆš19) substrates via Co evaporation and post deposition annealing. This (âˆš19 Ã— âˆš19) reconstruction was induced by Ni doping. Less than 1ML of Co on surface was obtained. Surface reconstruction induced growth of agglomerates of clusters rather than an uniform layer. The post deposition annealing of a crystal sample (up to 670 K, 770 K, 870 K, 970 K, 1070 K and 1170 K) led to creation of silicidesâ€™ nanostructures. Measurements showed that coalescence of Co nanoislands begun around 970 K. Annealing above 1070 K led to alloying of a Co, Ni and Si. As a consequence the Si(111)-(7Ã—7) reconstruction occurred at the cost of Si(111)-(âˆš19 Ã— âˆš19).

Open Access April 26, 2009

STM/STS investigation of carbon nanotubes deposited on Bi2Te3 surface

Maciej Bazarnik, Maciej Cegiel, Piotr Biskupski, Monika Jazdzewska, SÅ‚awomir Mielcarek, MaÅ‚gorzata Sliwinska-Bartkowiak, Ryszard Czajka

Page range: 295-298

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Abstract

This paper reports our scanning tunneling microscopy and spectroscopy (STM/STS) study of double-walled and multi-walled carbon nanotubes (CNTs) of different diameter deposited on Bi2Te3 (narrow gap semiconductor). The approximate diameter of the studied double-walled and multi-walled CNTs was 2 nm and 8 nm, respectively. Crystalline Bi2Te3 was used as a substrate to enhance the contrast between the CNTs and the substrate in the STS measurements performed to examine peculiarities of CNT morphology, such as junctions, ends or structural defects, in terms of their electronic structure.

Open Access April 26, 2009

Optical absorption and reflectivity spectra of highly chromium doped CdTe alloy and layer

Piotr Potera, Ireneusz Stefaniuk, Marian Kuzma, Ihor Virt, Barbara Pukowska

Page range: 299-303

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Abstract

In the present work, a CdTe alloy doped with a relatively high concentration of chromium (1%), and a CdTe:Cr layer, have been studied. Absorption and reflectivity spectra were measured at room temperature. They indicate the presence of chromium in the divalent state, both in the alloy and in the layer.

Open Access April 26, 2009

Interface resistive switching effects in bulk manganites

Mikhail Belogolovskii

Page range: 304-309

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Abstract

A physical mechanism driving the resistance switching in heterocontacts, formed by a metal counterelectrode and electrically conducting bulk perovskite manganites, is discussed. The nature of the inelastic, charge-hopping transport inside insulating and strongly inhomogeneous metal/manganite interfaces is studied theoretically. Comparison with measured current-voltage characteristics for a La0.67Ca0.33MnO3/Ag heterostructure in a high-resistance state reveals the presence of one or more charge traps along a conduction path within the interface. In a low-resistance state the main charge-transferring events are direct tunneling ones. The analysis of electrical noise measurements for a La0.82Ca0.18MnO3 single crystal in three different charge-transport regimes shows scattering centers with a broad, flat spectrum of excitation states, independent of manganite electrical and/or magnetic characteristics. All of these results are consistent with an oxygen-drift model for a bistable resistance state in perovskites.

Open Access April 26, 2009

Nanostructuring of diamond films using self-assembled nanoparticles

Oleg Babchenko, Alexander Kromka, Karel Hruska, Miroslav Michalka, Jiri Potmesil, Milan Vanecek

Page range: 310-314

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Abstract

We report the use of gold, nickel and diamond nanoparticles as a masking material for realization of diamond nano-structures by applying the dry plasma etching process. Applying low power plasma (100 W) in a gas mixture of CF4/O2 for 5 minutes results in a formation of three different types of diamond nanostructures, depending on the mask type material and particle size. Using of the Ni mask results in realization of diamond nano-rods, applying of the Au mask brings cauliflower-like structures, and using the diamond powder allows the production of irregular nano-structures. The main advance of the presented etching procedure is use of a self-assembly strategy where no lithographic steps are implemented.

Open Access April 26, 2009

Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects

Jarmila MÃ¼llerovÃ¡, Veronika VavruÅˆkovÃ¡, Pavel Å utta

Page range: 315-320

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Abstract

We report results obtained from measurements of optical transmittance spectra carried out on a series of silicon thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (Âµc-Si:H). Spectral refractive indices and absorption coefficients were determined from transmittance spectra. The spectral absorption coefficients were used to determine the Tauc optical band gap energy, the B factor of the Tauc plots, E 04 (energy at which the absorption coefficient is equal to 104 cmâˆ’1), and the Urbach energy as a function of the hydrogen dilution. The results were correlated with microstructure, namely volume fractions of the amorphous and crystalline phase with voids, and with the grain size.

Open Access April 26, 2009

On the topographic and optical properties of SiC/SiO2 surfaces

Stanislav Jureckova, Maria Jureckova, Ferdinand Chovanec, Hikaru Kobayashi, Masao Takahashi, Milan Mikula, Emil Pina

Page range: 321-326

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Abstract

The roughness of the semiconductor surface substantially influences properties of the whole structure, especially when thin films are created. In our work 3C SiC, 4H SiC and Si/a-SiC:H/SiO2 structures treated by various oxidation a passivation procedures are studied by atomic force microscopy (AFM) and scanning tunnelling microscopy (STM). Surface roughness properties are studied by fractal geometry methods. The complexity of the analysed surface is sensitive to the oxidation and passivation steps and the proposed fractal complexity measure values enable quantification of the fine surface changes. We also determined the optical properties of oxidized and passivated samples by using visual modelling and stochastic optimization.

Open Access April 26, 2009

Pulsed laser treatment of gold and black gold thin films fabricated by thermal evaporation

Michal NovotnÃ½, PÅ™emysl Fitl, Anna Sytchkova, JiÅ™Ã BulÃÅ™, Jan Lanaok, Petr Pokorna, David Najdek, Jia Boan

Page range: 327-331

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Abstract

The effect of pulsed laser treatment of metal, and metal blacks, was studied. Gold and black gold thin films were fabricated by thermal evaporation of gold in a vacuum and nitrogen atmosphere respectively. Black gold films were grown in a nitrogen atmosphere at pressures of 200 Pa and 300 Pa. UV pulsed laser radiation (Î» = 266 nm, Ï„ = 4 ns), with fluence ranging from 1 mJÂ·cmâˆ’2 to 250 mJÂ·cmâˆ’2 was used for the film treatment in a vacuum and nitrogen atmosphere. The nitrogen pressure was varied up to 100 kPa. Surface structure modifications were analyzed by optical microscopy, atomic force microscopy (AFM) and scanning electron microscopy (SEM). Energy dispersive X-ray spectroscopy (EDX) was used for chemical characterization of the samples. A significant dependence of the film optical and structural properties on laser treatment conditions (laser fluence, ambient pressure and number of applied pulses) was found. The threshold for observable damage and initiation of changes of morphology for gold and black gold surfaces was determined. Distinct modifications were observed for fluences greater than 106 mJÂ·cmâˆ’2 and 3.5 mJÂ·cmâˆ’2 for the gold and black gold films respectively. Absorbtivity of the black gold film is found to decrease with an increase in the number of laser pulses. Microstructural and nanostructural modifications after laser treatment of the black gold film were observed. EDX analysis revealed that no impurities were introduced into the samples during both the deposition and laser treatment.

Open Access April 26, 2009

A first-principles study of Ï€-conjugated thiol phenothiazine derivatives adsorbed on Au(111) surface

Cristian Morari, Diana Bogdan, Ioan Turcu

Page range: 332-339

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Abstract

We present an extensive theoretical study of a series of phenothiazine derivatives adsorbed on Au(111). A series of experimentally accessible quantities are calculated (ultra-violet photoemission spectra, scanning tunneling microscopy images). All simulations were performed by using DFT techniques and LCAO expansion of the molecular orbitals. The microscopic picture established in this work provides a deeper understanding of the interfacial processes that govern the working principle of single-molecule electronics and organic electronic devices.

Open Access April 26, 2009

Electronic and optical properties of ZnSxSe1âˆ’x alloys

Zhenbao Feng, Haiquan Hu, Shouxin Cui

Page range: 340-344

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Abstract

A series of calculations from first principles have been carried out to study structural, electronic, and optical properties of ZnSxSe1âˆ’x alloys. Our results show that the lattice constant scales linearly with sulfur composition. The imaginary parts of the dielectric function are calculated, which are in good agreement with the experimental data. We have also interpreted the origin of the spectral peaks on the basis of band structure and density of states. Additionally, we find that no bowing effect in the absorption edge is observed, unlike other II-VI semiconductor alloys.

Open Access April 26, 2009

Comparative study of ZnO layers prepared by PLD from different targets at various oxygen pressure levels

Daniel HaÅ¡ko, Jaroslav Bruncko, Andrej Vincze, FrantiÅ¡ek Uherek

Page range: 345-349

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Abstract

Two series of polycrystalline zinc oxide (ZnO) layers, from Zn or ZnO targets, were grown on silicon (1 1 1) substrates by pulsed laser deposition (PLD) at ambient oxygen pressure levels, stepwise increased from 1 to 35 Pa. For ablation of targets, a pulsed Nd:YAG laser was used. The structural and morphological properties of the layers were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM), and secondary ion mass spectrometry (SIMS). The SEM images of ZnO layers in SE mode show a uniform granular structure and modified surface morphology, depending on oxygen pressure. The mean grain size in height and lateral directions decreases with an increase of oxygen pressure from 1 to 5 Pa, while a subsequent rise of oxygen pressure from 5 to 35 Pa will cause an increase in the grain size. The AFM measurement revealed that the surface structures of zinc oxide layers grown from different targets were similar, and the layers formed at an ambient oxygen pressure of 5 Pa exhibited the smallest values of calculated roughness and granularity. SIMS depth profiling analyses confirmed that the ZnO composition was homogenous across the layer, up to the abrupt change of chemical composition at the interface between the ZnO layer and the Si substrate.

Open Access April 26, 2009

Adatom diffusion on vicinal surfaces with permeable steps

Bogdan Ranguelov, Ivan Markov

Page range: 350-355

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Abstract

We study the behavior of single atoms on an infinite vicinal surface assuming certain degree of step permeability. Assuming complete lack of re-evaporation and ruling out nucleation the atoms will inevitably join kink sites at the steps but will do many attempts before that. Increasing the probability for step permeability or the kink spacing lead to increase of the number of steps crossed before incorporation of the atoms into kink sites. The asymmetry of the attachment-detachment kinetics (Ehrlich-Schwoebel effect) suppresses the step permeability and completely eliminates it in the extreme case of the infinite Ehrlich-Schwoebel barrier. A negligibly small drift of the adatoms in a direction perpendicular to the steps leads to a significant asymmetry of the distribution of the permeability events, the atoms thus visiting more distant steps in the direction of the drift. The curves are fitted with an exponential function containing a constant which can be considered as a length scale of the effect of the drift. Some conclusions concerning the stability of the vicinals are drawn.

Open Access April 26, 2009

Pt coated Cr2O3 thin films for resistive gas sensors

Aarne Kasikov, Alar Gerst, Arvo Kikas, Leonard Matisen, Agu Saar, Aivar Tarre, Arnold Rosental

Page range: 356-362

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Abstract

The resistive response of atomic layer deposited thin epitaxial Î±-Cr2O3(0 0 1) films, to H2 and CO in air, was studied. The films were covered with Pt nanoislands formed by electron-beam evaporation of a sub-monolayer amount of the material. The gas measurements were performed at 250Â°C and 450Â°C. These temperatures led to different proportion of chemical states, Pt2+ and Pt4+, to which the Pt oxidized. The modification was ascertained by the X-ray photoelectron spectroscopy method. As a result of the modification, the response was fast at 250Â°C, but slowed at 450Â°C. A disadvantageous abundance of Pt4+ arising at 450Â°C in air could be diminished by high-vacuum annealing thus restoring the response properties of the system at 250Â°C.

Open Access April 26, 2009

Wet-chemical treatment and electronic interface properties of silicon solar cell substrates

Heike Angermann, JÃ¶rg Rappich, Carola Klimm

Page range: 363-370

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Abstract

On textured n-type silicon substrates for solar cell manufacturing, the relation between light trapping behavior, structural imperfections, energetic distribution of interface state densities and interface recombination losses were investigated by applying surface sensitive techniques. The field-modulated surface photovoltage (SPV), in-situ photoluminescence (PL) measurements, total hemispherical UV-NIR-reflectance measurements and electron microscopy (SEM) were employed to yield detailed information on the influence of wet-chemical treatments on preparation induced micro-roughness and electronic properties of polished and textured silicon substrates. It was shown that isotropic as well as anisotropic etching of light trapping structures result in high surface micro-roughness and density of interface states. Removing damaged surface layers in the nm range by wet-chemical treatments, the density of these states and the related interface recombination loss can be reduced. In-situ PL measurements were applied to optimise HF-treatment times aimed at undamaged, oxide-free and hydrogen-terminated substrate surfaces as starting material for subsequent solar cell preparations.

Open Access April 26, 2009

Multilayer coatings for flexible high-barrier materials

Karol VaÅ¡ko, Klaus Noller, Milan Mikula, Sabine Amberg-Schwab, Ulrike Weber

Page range: 371-378

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Abstract

A multilayer, flexible, and transparent high-barrier system based on flexible plastic foils, polyethyleneterephthalate (PET) and ethylene-tetrafluoroethylene-copolymer (ETFE), combined with vacuum-deposited, inorganic SiOx layers and hybrid ORMOCERÂ® varnish layers were prepared in different orders on a semiproduction level. Barrier properties of prepared systems, as water vapour transmission (WVTR) and oxygen transmission (OTR), were measured and studied in connection with surface energy, surface topography, and water vapour adsorption properties. Correlations among layers sequence, barrier properties, and other parameters are presented, including some basic principles of permeation of substances through multilayer barrier systems. A combination of several inorganic and hybrid varnish layers is necessary to achieve the technological demands from a barrier standpoint. It is easier to suppress the oxygen transport than the water transport, due to the additional active penetration of water through hydrogen bonds and silanol creations at oxide interfaces, capillary condensation, and swelling with high internal pressure, leading to new defects.

Open Access April 26, 2009

Structural, morphology and electrical properties of layered copper selenide thin film

J. Ying Chyi Liew, Zainal Talib, W. Mahmood, M. Yunus, Zulkarnain Zainal, Shaari Halim, Mohd Moksin, Wan Yusoff, K. Pah Lim

Page range: 379-384

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Abstract

Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.

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