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Abstract

We report the photobehaviour of a series of eight structurally related arylacetylene derivatives, in solution as well as in pristine and PC61BM blended thin-_lms. The formation of both H- and J-aggregates in the solid state have been demonstrated, and, interestingly, an energy transfer from H-aggregates or/and from residual "unstacked" molecules to J-aggregates has been found, the latter being the only emitting species. The fuorescence quenching by PC61BM at di_erent loadings has been studied in blend films, and it has been found particularly effcient in the case of a symmetrical peripheral substitution of the acetylene derivative core. Preliminary time-resolved measurements in emission (ns resolution) and in absorption (fs resolution) con_rmed the H⟶J energy transfer and underlined the presence of delayed fuorescence from Jaggregates, formed by energy transfer from the long-lived first excited singlet state of H-aggregates. In all cases, a homogeneous surface morphology of thin films

Abstract

We report results obtained from measurements of optical transmittance spectra carried out on a series of silicon thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (µc-Si:H). Spectral refractive indices and absorption coefficients were determined from transmittance spectra. The spectral absorption coefficients were used to determine the Tauc optical band gap energy, the B factor of the Tauc plots, E 04 (energy at which the absorption coefficient is equal to 104 cm−1), and the Urbach energy as a function of the hydrogen dilution. The results were correlated with microstructure, namely volume fractions of the amorphous and crystalline phase with voids, and with the grain size.

Abstract

Barrier model of a non-crystalline semiconductor is described in this article. The most important optical phenomena, which are typical for this group of materials, are explained on the base of this model. The model assumes that in non-crystalline semiconductors the potential barriers exist, which separate certain microscopic areas from each other, assuming barriers possess a parabolic profile. This conception explains the rise of exponential tails of optical absorption at the end of optical edge as well as electroabsorption, photoelectric conductivity, photoluminescence, and others. Using this model, many electric transport properties of non-crystalline semiconductors can be explained successfully.

solar to hydrogen conversion efficiencies (% STH) were found to be 8.66 % and 7.57 % for the Dj-a-Si solar cell driven electrolysis of water in the Ni-Co3O4kPt and non-noble metal based Ni-Co3O4kNi electrochemical cells respectively. Notably, the lowest hydrogen genera- tion current efficiency of 36.33 % and % STH efficiency of 5.36 % were obtained when Pt metal was used as both anode and cathode in PtkPt electrochemical cell. Keywords. Solar water electrolysis, amorphous silicon, solar cells, anodes and cathodes. PACS®(2010). 78.40.fy, 82.45.vp, 88.40.jj. 1

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