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American Mineralogist

Journal of Earth and Planetary Materials

Ed. by Baker, Don / Xu, Hongwu / Swainson, Ian

IMPACT FACTOR 2017: 2.645

CiteScore 2018: 2.55

SCImago Journal Rank (SJR) 2018: 1.355
Source Normalized Impact per Paper (SNIP) 2018: 1.103

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Volume 92, Issue 10


Letter: Effects of irradiation damage on the back-scattering of electrons: Silicon-implanted silicon

Lutz Nasdala / Andreas Kronz
  • Geowissenschaftliches Zentrum der Georg-August-Universität Göttingen, D-37077 Göttingen, Germany
  • Other articles by this author:
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/ Dieter Grambole
  • Forschungszentrum Dresden-Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, D-01328 Dresden, Germany
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/ Ghislain Trullenque
Published Online: 2015-04-01 | DOI: https://doi.org/10.2138/am.2007.2648


Radiation damage in a (initially crystalline) silicon wafer was generated by microbeam ion implantation with 600 keV Si+ ions (fluence 5 × 1014 ions/cm2). To produce micro-areas with different degrees of damage, 14 implantations at different temperatures (between 23 and 225 °C) were done. The structural state of irradiated areas was characterized using Raman spectroscopy and electron back-scatter diffraction. All irradiated areas showed strong structural damage in surficial regions (estimated depth <1 μm), and at implant substrate temperatures of below 130 °C, the treatment caused complete amorphization. Back-scattered electron (BSE) image intensities correlate with the degree of irradiation damage; all irradiated areas were higher in BSE than the surrounding host. Because there were no variations in the chemical composition and, with that, no Z̅ contrast in our sample, this observation again supports the hypothesis that structural radiation damage may strongly affect BSE images of solids.

Keywords: Back-scattered electron images; Raman spectroscopy; electron back-scatter diffraction; radiation damage; silicon

About the article

Received: 2007-03-22

Accepted: 2007-05-29

Published Online: 2015-04-01

Published in Print: 2007-10-01

Citation Information: American Mineralogist, Volume 92, Issue 10, Pages 1768–1771, ISSN (Online) 1945-3027, ISSN (Print) 0003-004X, DOI: https://doi.org/10.2138/am.2007.2648.

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