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Open Chemistry

formerly Central European Journal of Chemistry

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IMPACT FACTOR 2017: 1.425
5-year IMPACT FACTOR: 1.511

CiteScore 2017: 1.45

SCImago Journal Rank (SJR) 2017: 0.349
Source Normalized Impact per Paper (SNIP) 2017: 0.812

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Volume 13, Issue 1


Volume 13 (2015)

Deposition of Zn-containing films using atmospheric pressure plasma jet

Oleksandr Galmiz / Monika Stupavska / Harm Wulff / Holger Kersten
  • Institute of Experimental and Applied Physics, Christian-Albrechts-Universitat zu Kiel, 24098 Kiel, Germany
  • Other articles by this author:
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/ Antonin Brablec
  • Corresponding author
  • Dept. of Physical Electronics, Masaryk University, 61137 Brno, Czech Republic
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
/ Mirko Cernak
Published Online: 2014-11-17 | DOI: https://doi.org/10.1515/chem-2015-0020


The purpose of this work was to deposit Zn-containing films on Si substrates using the commercial atmospheric pressure plasma jet “kINPen’09.” In preliminary experiments Zn-containing films were deposited on the silicon substrates immersed in water solutions of Zn(NO3)2•6H2O salt. The surface composition of deposited films was analyzed by the XPS (X-ray photoelectron spectroscopy) technique while the bulk composition was studied by means of XRD (X-ray diffraction) mesurements. The film thickness was measured by a profilometer. We have determined that the concentration of the zinc nitrate solution as well as changes in the deposition time resulted in a large fluctuation of the deposited film thickness. However, the successful deposition of the Zn-containing films on the Si substrate was definitely confirmed.

Graphical Abstract

Keywords : Atmospheric pressure plasma jet; film deposition; zinc


About the article

Received: 2014-01-30

Accepted: 2014-05-14

Published Online: 2014-11-17

Citation Information: Open Chemistry, Volume 13, Issue 1, ISSN (Online) 2391-5420, DOI: https://doi.org/10.1515/chem-2015-0020.

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© 2015 Oleksandr Galmiz et al.. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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