Jump to ContentJump to Main Navigation
Show Summary Details
More options …

Open Chemistry

formerly Central European Journal of Chemistry

1 Issue per year


IMPACT FACTOR 2016 (Open Chemistry): 1.027
IMPACT FACTOR 2016 (Central European Journal of Chemistry): 1.460

CiteScore 2016: 0.61

SCImago Journal Rank (SJR) 2016: 0.288
Source Normalized Impact per Paper (SNIP) 2016: 0.735

Open Access
Online
ISSN
2391-5420
See all formats and pricing
More options …
Volume 13, Issue 1 (Nov 2014)

Issues

Influence of microwave plasma parameters on light emission from SiV color centers in nanocrystalline diamond films

László Himics
  • Corresponding author
  • Institute for Solid State Physics and Optics, Wigner Research Centre for Physics of the Hungarian Academy of Sciences, H-1525 Budapest, Hungary
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
/ Sára Tóth
  • Institute for Solid State Physics and Optics, Wigner Research Centre for Physics of the Hungarian Academy of Sciences, H-1525 Budapest, Hungary
  • Email
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
/ Miklós Veres
  • Institute for Solid State Physics and Optics, Wigner Research Centre for Physics of the Hungarian Academy of Sciences, H-1525 Budapest, Hungary
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
/ Péter Csíkvári
  • Department of Atomic Physics, Budapest University of Technology and Economics, H-1521 Budapest, Hungary>
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
/ Margit Koós
  • Institute for Solid State Physics and Optics, Wigner Research Centre for Physics of the Hungarian Academy of Sciences, H-1525 Budapest, Hungary
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
Published Online: 2014-11-17 | DOI: https://doi.org/10.1515/chem-2015-0034

Abstract

Zero phonon line (ZPL) shape, position and integral intensity of SiV defect center in diamond is presented for nanocrystalline diamond (NCD) films grown at different conditions, NCD films of average grain sizes from ~50 nm up to ~180 nm have been deposited onto c-Si wafer at substrate temperature of 700 and 850oC from mixture with different CH4 and H2 ratios using MWCVD process. Light emission of SiV defect center and Raman scattering properties of NCD samples were measured on a Renishaw micro-Raman spectrometer with 488 nm excitation. Scanning electron microscopy images were used for monitoring surface morphology and for the analysis of the average grain sizes. Sample thickness was determined by in situ laser reflection interferometry. Characteristics of SiV ZPL are discussed in light of the morphology, bonding structure and average grain size of NCD films.

Keywords : nanocrystalline diamond; MW CVD; SiV color center; photoluminescence; Raman scattering

References

  • [1] Kurtsiefer C., Mayer S., Zarda P., Weinfurter H., Phys. Rev. Lett., 2000, 85, 290 CrossrefGoogle Scholar

  • [2] Beveratos A., R. Brouri, Gacoin T., Willing A., Poizat J.P., Grangier P., Phys. Rev. Lett., 2002, 89, 187901 CrossrefGoogle Scholar

  • [3] Jelezko F., Gaebel T., Popa I., Domhau M., Gruber A., Wrachtrup J., Phys. Rev. Lett., 2004, 93, 130501 CrossrefGoogle Scholar

  • [4] Ho D. (Ed.), Nanodiamonds, Applications in Biology and Nanoscale Medicine, Springer, New York, 2010 Google Scholar

  • [5] Chance B., Cope M., Gratton E., Ramanujam N., Tromberg B., Review of Scientific Instruments, 1998, 69(10), 3457 Google Scholar

  • [6] Wang C., Kurtsiefer C., Weinfurter H., Burchard B., J. Phys. B, 2006, 39, 37 Google Scholar

  • [7] Vlasov I.I., Barnard A.S., Ralchenko V.G. et al., Adv. Mater., 2009, 21, 808 CrossrefGoogle Scholar

  • [8] Gaebel T., Popa I., Gruber A., Domhan M., Jelezko F., Wrachtrup D., New J. Phys., 2004, 6, 98 Google Scholar

  • [9] Wang C., Kurtsiefer C., Weinfurter H., Burchard B., J. Phys. B: At. Mol. Opt. Phys., 2006, 39, 37 CrossrefGoogle Scholar

  • [10] Sedov V.S., Vlasov I.I., Ralchenko V.G., Khomich A.A., Konov V.I., Fabbri A.G., Conte G., Bull. Lebedev Phys. Inst., 2011, 38, 291 CrossrefGoogle Scholar

  • [11] May P.W., Ashfold M.N.R., Mankelevich Yu.A., J. Appl. Phys., 2007, 101, 053115 CrossrefGoogle Scholar

  • [12] Borges C.F.M., Moisan M., Gicquel A., Diam. Rel. Mat., 1995, 4, 149 Google Scholar

  • [13] Locher R., Wild C., Herres N., Behr D., Koidl P., Appl. Phys. Lett., 1994, 65, 34 CrossrefGoogle Scholar

  • [14] Nistor S.V., Stefan M., Ralchenko V., Khomich A., Schoemaker D., J. Appl. Phys. 2000, 87, 8741 CrossrefGoogle Scholar

  • [15] Yugo S., Kanai T., Kimura T., Muto T., Appl. Phys. Lett., 1991, 58, 1036 CrossrefGoogle Scholar

  • [16] Butler J.E., Sumant A.V., Chem. Vap. Dep., 2008, 14, 146 Google Scholar

  • [17] Mishra P., Jain K.P., Phys. Rev. B, 2001, 64, 073304 CrossrefGoogle Scholar

  • [18] Brillante A. et al., Physica, 1986, 139, 533 Google Scholar

  • [19] Clark C., Dickerson C., Surf. Coat. Tech., 1991, 47, 336 CrossrefGoogle Scholar

  • [20] Edwards A.M., Newton M.E., Martnean P.M., Twitchen D.J., Williams S.D., Phys. Rev. B, 2008, 77, 245205 CrossrefGoogle Scholar

About the article

Received: 2014-01-31

Accepted: 2014-05-26

Published Online: 2014-11-17


Citation Information: Open Chemistry, ISSN (Online) 2391-5420, DOI: https://doi.org/10.1515/chem-2015-0034.

Export Citation

© 2015 László Himics et al.. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

Citing Articles

Here you can find all Crossref-listed publications in which this article is cited. If you would like to receive automatic email messages as soon as this article is cited in other publications, simply activate the “Citation Alert” on the top of this page.

[1]
L. Himics, S. Tóth, M. Veres, and M. Koós
Optical and Quantum Electronics, 2016, Volume 48, Number 8

Comments (0)

Please log in or register to comment.
Log in