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Journal of RF-Engineering and Telecommunications

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Volume 72, Issue 9-10


Second Order Solutions of THz Response of Gated Two-Dimensional Electron Gas in Magnetic Field

Daipeng Wang / Jiuxun Sun
  • Corresponding author
  • School of Physical Electronics, University of Electronic Science and Technology, Chengdu 610054, China
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/ Chao Yang
  • School of National Defense Science and Technology, Southwest University of Science and Technology, Mianyang 621010, China
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/ Yan Dong / Zhenlin Yan
Published Online: 2018-07-17 | DOI: https://doi.org/10.1515/freq-2017-0271


In this work, the Lifshits-Dyakonov theory for THz response of gated two-dimensional electron gas in magnetic field are analyzed and improved. Instead an approximate processing method for the response in original theory to the second order solution, the second order equations are strictly solved. The numerical results show that both first and second order solutions are damped oscillating functions of coordinate, but all amplitudes would decrease as magnetic field B increasing except for the first order solution of voltage. The variation of second order response as a function of B also shows damped oscillating variations, the agreement with experimental curves is reasonable.

Keywords: field effect transistor; magnetic field; THz; detection


  • [1]

    M. Dyakonov and M. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid,” IEEE. Trans. Electron Dev., vol. 43, pp. 380–387, 1996.CrossrefGoogle Scholar

  • [2]

    M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett., vol. 71, pp. 2465–2468, 1993.CrossrefGoogle Scholar

  • [3]

    M. Dyakonov and M. Shur, “Two dimensional electronic flute,” Appl. Phys. Lett., vol. 67, pp. 1137–1139, 1995.CrossrefGoogle Scholar

  • [4]

    M. Dyakonov, “Generation and detection of Terahertz radiation by field effect transistors,” Comp. Ren. Phys., vol. 11, pp. 413–420, 2010.CrossrefGoogle Scholar

  • [5]

    S. Boubanga-Tombet, M. Sakowicz, and D. Coquillat, “Terahertz radiation detection by field effect transistor in magnetic field,” Appl. Phys. Lett., vol. 95, pp. 07210601–07210603, 2009.Web of ScienceGoogle Scholar

  • [6]

    Y. Q. Deng and S. Shur, “Electron mobility and terahertz detection using silicon MOSFETs,” Solid. State. Elec., vol. 47, pp. 1559–1563, 2003.CrossrefGoogle Scholar

  • [7]

    W. Knap, V. Kachorovskii, and Y. Q. Deng, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys., vol. 91, pp. 9346–9353, 2002.CrossrefGoogle Scholar

  • [8]

    W. Knap, Y. Deng, and S. Rumyantsev, “Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor,” Appl. Phys. Lett., vol. 80, pp. 3433–3435, 2002.CrossrefGoogle Scholar

  • [9]

    S. Kang, P. J. Burke, L. N. Pfeiffer, and K. W. West, “Resonant frequency response of plasma wave detectors,” Appl. Phys. Lett., vol. 89, pp. 21351201–21351203, 2006.Google Scholar

  • [10]

    M. Sakowicz, M. B. Lifshits, and O. A. Klimenko, “Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects,” J. Appl. Phys., vol. 110, pp. 05451201–05451203, 2011.Web of ScienceGoogle Scholar

  • [11]

    M. B. Lifshits and M. I. Dyakonov, “Photovoltaic effect in a gated two-dimensional electron gas in magnetic field,” Phys. Rev. B, vol. 80, pp. 121301–121304, 2009.Web of ScienceGoogle Scholar

About the article

Daipeng Wang

DaiPeng Wang is a M.E.student of School of Physical Electronics,University of Electronic Science and Technology of China,He received his M.S. from the Microelectronics and solid electronics college, University of Electronic Science and Technology of China in June, 2015.

Received: 2017-11-27

Published Online: 2018-07-17

Published in Print: 2018-08-28

The Science and Technology Foundation of State Key Laboratory for Shock Wave and Detonation Physics under Grant, 9140C670103120C6702.

Citation Information: Frequenz, Volume 72, Issue 9-10, Pages 471–477, ISSN (Online) 2191-6349, ISSN (Print) 0016-1136, DOI: https://doi.org/10.1515/freq-2017-0271.

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