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High Temperature Materials and Processes

Editor-in-Chief: Fukuyama, Hiroyuki

Editorial Board: Waseda, Yoshio / Fecht, Hans-Jörg / Reddy, Ramana G. / Manna, Indranil / Nakajima, Hideo / Nakamura, Takashi / Okabe, Toru / Ostrovski, Oleg / Pericleous, Koulis / Seetharaman, Seshadri / Straumal, Boris / Suzuki, Shigeru / Tanaka, Toshihiro / Terzieff, Peter / Uda, Satoshi / Urban, Knut / Baron, Michel / Besterci, Michael / Byakova, Alexandra V. / Gao, Wei / Glaeser, Andreas / Gzesik, Z. / Hosson, Jeff / Masanori, Iwase / Jacob, Kallarackel Thomas / Kipouros, Georges / Kuznezov, Fedor


IMPACT FACTOR 2018: 0.427
5-year IMPACT FACTOR: 0.471

CiteScore 2018: 0.58

SCImago Journal Rank (SJR) 2018: 0.231
Source Normalized Impact per Paper (SNIP) 2018: 0.377

Open Access
Online
ISSN
2191-0324
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Volume 30, Issue 1-2

Issues

Removal Rate of Phosphorus from Molten Silicon

Takayuki Kemmotsu / Takashi Nagai / Masafumi Maeda
Published Online: 2011-04-19 | DOI: https://doi.org/10.1515/htmp.2011.002

Abstract

An electron beam melting technique under high vacuum is known to be effective for the removal of phosphorus from silicon, however, the rate of removal is not yet adequate. In order to improve the removal rate, the effects of four experimental factors on this rate were investigated. Raising temperature of the surface of molten silicon provide effective, neither residual gas pressure in a vacuum chamber nor stirring molten silicon improve the rate, while supplying reactant gas to molten silicon had some effect.

Keywords.: Silicon; phosphorus; electron beam; solar cell

About the article

Corresponding author: Takashi Nagai, Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan


Received: 2010-07-02

Accepted: 2010-07-20

Published Online: 2011-04-19

Published in Print: 2011-04-01


Citation Information: High Temperature Materials and Processes, Volume 30, Issue 1-2, Pages 17–22, ISSN (Online) 2191-0324, ISSN (Print) 0334-6455, DOI: https://doi.org/10.1515/htmp.2011.002.

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