Jump to ContentJump to Main Navigation
Show Summary Details
More options …

High Temperature Materials and Processes

Editor-in-Chief: Fukuyama, Hiroyuki

Editorial Board: Waseda, Yoshio / Fecht, Hans-Jörg / Reddy, Ramana G. / Manna, Indranil / Nakajima, Hideo / Nakamura, Takashi / Okabe, Toru / Ostrovski, Oleg / Pericleous, Koulis / Seetharaman, Seshadri / Straumal, Boris / Suzuki, Shigeru / Tanaka, Toshihiro / Terzieff, Peter / Uda, Satoshi / Urban, Knut / Baron, Michel / Besterci, Michael / Byakova, Alexandra V. / Gao, Wei / Glaeser, Andreas / Gzesik, Z. / Hosson, Jeff / Masanori, Iwase / Jacob, Kallarackel Thomas / Kipouros, Georges / Kuznezov, Fedor

IMPACT FACTOR 2018: 0.427
5-year IMPACT FACTOR: 0.471

CiteScore 2018: 0.58

SCImago Journal Rank (SJR) 2018: 0.231
Source Normalized Impact per Paper (SNIP) 2018: 0.377

Open Access
See all formats and pricing
More options …
Volume 30, Issue 1-2


Removal Rate of Phosphorus from Molten Silicon

Takayuki Kemmotsu / Takashi Nagai / Masafumi Maeda
Published Online: 2011-04-19 | DOI: https://doi.org/10.1515/htmp.2011.002


An electron beam melting technique under high vacuum is known to be effective for the removal of phosphorus from silicon, however, the rate of removal is not yet adequate. In order to improve the removal rate, the effects of four experimental factors on this rate were investigated. Raising temperature of the surface of molten silicon provide effective, neither residual gas pressure in a vacuum chamber nor stirring molten silicon improve the rate, while supplying reactant gas to molten silicon had some effect.

Keywords.: Silicon; phosphorus; electron beam; solar cell

About the article

Corresponding author: Takashi Nagai, Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan

Received: 2010-07-02

Accepted: 2010-07-20

Published Online: 2011-04-19

Published in Print: 2011-04-01

Citation Information: High Temperature Materials and Processes, Volume 30, Issue 1-2, Pages 17–22, ISSN (Online) 2191-0324, ISSN (Print) 0334-6455, DOI: https://doi.org/10.1515/htmp.2011.002.

Export Citation

Citing Articles

Here you can find all Crossref-listed publications in which this article is cited. If you would like to receive automatic email messages as soon as this article is cited in other publications, simply activate the “Citation Alert” on the top of this page.

Shuang Shi, Pengting Li, Dachuan Jiang, Yi Tan, Xu Li, Jinxiang Yang, Lei Zhang, Feng Wang, Jiayan Li, and H.M. Noor ul Huda Khan Asghar
Materials Science in Semiconductor Processing, 2019, Volume 96, Page 53
Katherine Le, Yindong Yang, Mansoor Barati, and Alexander McLean
Metallurgical and Materials Transactions B, 2018
Shuang Shi, Pengting Li, Jianxiong Meng, Dachuan Jiang, Yi Tan, and H. M. Noor ul Huda Khan Asghar
Phys. Chem. Chem. Phys., 2017
Shuang Shi, Wei Dong, Xu Peng, Dachuan Jiang, and Yi Tan
Applied Surface Science, 2013, Volume 266, Page 344
Dachuan Jiang, Shiqiang Ren, Shuang Shi, Wei Dong, Jieshan Qiu, Yi TAN, and Jiayan Li
Journal of Electronic Materials, 2014, Volume 43, Number 2, Page 314
Yi Tan, Shiqiang Qin, Shutao Wen, Jiayan Li, Shuang Shi, Dachuan Jiang, and Dayu Pang
Materials Science in Semiconductor Processing, 2014, Volume 18, Page 42
Hideaki Sasaki, Yoshifumi Kobashi, Takashi Nagai, and Masafumi Maeda
Advances in Materials Science and Engineering, 2013, Volume 2013, Page 1
Song-Sheng Zheng, Thorvald Abel Engh, Merete Tangstad, and Xue-Tao Luo
Separation and Purification Technology, 2011, Volume 82, Page 128

Comments (0)

Please log in or register to comment.
Log in