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High Temperature Materials and Processes

Editor-in-Chief: Fukuyama, Hiroyuki

Editorial Board Member: Waseda, Yoshio / Fecht, Hans-Jörg / Reddy, Ramana G. / Manna, Indranil / Nakajima, Hideo / Nakamura, Takashi / Okabe, Toru / Ostrovski, Oleg / Pericleous, Koulis / Seetharaman, Seshadri / Straumal, Boris / Suzuki, Shigeru / Tanaka, Toshihiro / Terzieff, Peter / Uda, Satoshi / Urban, Knut / Baron, Michel / Besterci, Michael / Byakova, Alexandra V. / Gao, Wei / Glaeser, Andreas / Gzesik, Z. / Hosson, Jeff / Masanori, Iwase / Jacob, Kallarackel Thomas / Kipouros, Georges / Kuznezov, Fedor

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Removal Rate of Phosphorus from Molten Silicon

Takayuki Kemmotsu
  • Institute of Industrial Science, The University of Tokyo, Japan
/ Takashi Nagai
  • Corresponding author
  • Institute of Industrial Science, The University of Tokyo, Japan
  • Email:
/ Masafumi Maeda
  • Institute of Industrial Science, The University of Tokyo, Japan
Published Online: 2011-04-19 | DOI: https://doi.org/10.1515/htmp.2011.002

Abstract

An electron beam melting technique under high vacuum is known to be effective for the removal of phosphorus from silicon, however, the rate of removal is not yet adequate. In order to improve the removal rate, the effects of four experimental factors on this rate were investigated. Raising temperature of the surface of molten silicon provide effective, neither residual gas pressure in a vacuum chamber nor stirring molten silicon improve the rate, while supplying reactant gas to molten silicon had some effect.

Keywords.: Silicon; phosphorus; electron beam; solar cell

About the article

Corresponding author: Takashi Nagai, Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan


Received: 2010-07-02

Accepted: 2010-07-20

Published Online: 2011-04-19

Published in Print: 2011-04-01


Citation Information: High Temperature Materials and Processes, ISSN (Online) 2191-0324, ISSN (Print) 0334-6455, DOI: https://doi.org/10.1515/htmp.2011.002. Export Citation

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