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Journal of Electrical Engineering

The Journal of Slovak University of Technology

6 Issues per year


IMPACT FACTOR 2016: 0.483
5-year IMPACT FACTOR: 0.542

CiteScore 2016: 0.93

SCImago Journal Rank (SJR) 2015: 0.231
Source Normalized Impact per Paper (SNIP) 2015: 0.505

Open Access
Online
ISSN
1339-309X
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Volume 68, Issue 1

Issues

Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Petr Macháč / Ondřej Hejna / Petr Slepička
Published Online: 2017-03-14 | DOI: https://doi.org/10.1515/jee-2017-0011

Abstract

The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene films and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

Keywords: graphene; cold wall reactor; CVD process; transfer free process

References

  • [1] W. Choi, I. Lahiri, R. Seelaboyina and Y. S. Kang ”Synthesis of Graphene and its Applications: A Review”, Crit. Rev. Solid State Mater. Sci. vol. 35, no. 1, 2010, pp. 52-71.CrossrefGoogle Scholar

  • [2] M. J. Allen, V. C. Tung and R. B. Kaner, ”Honeycomb Carbon: A Review of Graphene”, Chem. Rev., vol. 110, no. 1, 2010, pp. 132-145.CrossrefGoogle Scholar

  • [3] L. De Arco, YI. Zhang, A. Kumar and Z. Chongwu ”Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition”, IEEE Transactions on Nanotech- nology, vol. 8, no. 2, 2009, pp. 135-138.Google Scholar

  • [4] M. Othman, R. Ritikos, S. M. Hafiz, N. Khanis, N. A. Rashid and S. A. Rahman, ”Low-Temperature Plasma-Enhanced Che- mical Vapour Deposition of Transfer-Free Graphene Thin Films” Materials Letters vol. 158, 2015, pp. 436-438.Google Scholar

  • [5] T. Kato and R. Hatakeyama, ”Direct Growth of Doping -Den- sity-Controlled Hexagonal Graphene on SiO2 Substrate by Rapid-Heating Plasma CVD”, ASC Nano, vol. 6, no. 10, 2012, pp. 8508-8515.Google Scholar

  • [6] T. H. Bointon, M. D. Barnes, S. Russo and M. F. Craciun, ”High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition”, Adv. Mater., vol. 27, no. 28, 2015, pp. 4200-4206.Google Scholar

  • [7] Y. Hao, Y. Wang, L. Wang, Z. Ni, Z. Wang, R. Wang, C. Koo, Z. Shen and J. Thong, ”Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy”, Small, vol. 6, no. 2, 2010, pp. 195-200.CrossrefGoogle Scholar

  • [8] M. Pimenta, G. Dresselhaus, M. Dresselhaus, L. Cancado, A. Jo- rio and R. Saito, ”Studying Disorder in Graphite-Based Systems by Raman Spectroscopy”, Phys. Chem. Chem. Phys., vol. 9, no. 11, 2007, pp. 1276-1290.CrossrefGoogle Scholar

  • [9] C. Su, A. Lu, C. Wu, K. Liu, W. Zhang, S. Lin, Z. Juang, Y. Zhong, F. Chen and L. Li, ”Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chem- ical Vapor Deposition”, Nano Letters, vol. 11, no. 9, 2011, pp. 3612-3616. CrossrefGoogle Scholar

About the article

Received: 2016-07-07

Published Online: 2017-03-14

Published in Print: 2017-01-01


Citation Information: Journal of Electrical Engineering, Volume 68, Issue 1, Pages 79–82, ISSN (Online) 1339-309X, DOI: https://doi.org/10.1515/jee-2017-0011.

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© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License. BY-NC-ND 4.0

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