Jump to ContentJump to Main Navigation
Show Summary Details
More options …

Journal of Electrical Engineering

The Journal of Slovak University of Technology

6 Issues per year


IMPACT FACTOR 2016: 0.483
5-year IMPACT FACTOR: 0.542

CiteScore 2016: 0.93

SCImago Journal Rank (SJR) 2015: 0.231
Source Normalized Impact per Paper (SNIP) 2015: 0.505

Open Access
Online
ISSN
1339-309X
See all formats and pricing
More options …
Volume 68, Issue 1

Issues

Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Petr Macháč / Ondřej Hejna / Petr Slepička
Published Online: 2017-03-14 | DOI: https://doi.org/10.1515/jee-2017-0011

Abstract

The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene films and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

Keywords: graphene; cold wall reactor; CVD process; transfer free process

References

  • [1] W. Choi, I. Lahiri, R. Seelaboyina and Y. S. Kang ”Synthesis of Graphene and its Applications: A Review”, Crit. Rev. Solid State Mater. Sci. vol. 35, no. 1, 2010, pp. 52-71.CrossrefGoogle Scholar

  • [2] M. J. Allen, V. C. Tung and R. B. Kaner, ”Honeycomb Carbon: A Review of Graphene”, Chem. Rev., vol. 110, no. 1, 2010, pp. 132-145.CrossrefGoogle Scholar

  • [3] L. De Arco, YI. Zhang, A. Kumar and Z. Chongwu ”Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition”, IEEE Transactions on Nanotech- nology, vol. 8, no. 2, 2009, pp. 135-138.Google Scholar

  • [4] M. Othman, R. Ritikos, S. M. Hafiz, N. Khanis, N. A. Rashid and S. A. Rahman, ”Low-Temperature Plasma-Enhanced Che- mical Vapour Deposition of Transfer-Free Graphene Thin Films” Materials Letters vol. 158, 2015, pp. 436-438.Google Scholar

  • [5] T. Kato and R. Hatakeyama, ”Direct Growth of Doping -Den- sity-Controlled Hexagonal Graphene on SiO2 Substrate by Rapid-Heating Plasma CVD”, ASC Nano, vol. 6, no. 10, 2012, pp. 8508-8515.Google Scholar

  • [6] T. H. Bointon, M. D. Barnes, S. Russo and M. F. Craciun, ”High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition”, Adv. Mater., vol. 27, no. 28, 2015, pp. 4200-4206.Google Scholar

  • [7] Y. Hao, Y. Wang, L. Wang, Z. Ni, Z. Wang, R. Wang, C. Koo, Z. Shen and J. Thong, ”Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy”, Small, vol. 6, no. 2, 2010, pp. 195-200.CrossrefGoogle Scholar

  • [8] M. Pimenta, G. Dresselhaus, M. Dresselhaus, L. Cancado, A. Jo- rio and R. Saito, ”Studying Disorder in Graphite-Based Systems by Raman Spectroscopy”, Phys. Chem. Chem. Phys., vol. 9, no. 11, 2007, pp. 1276-1290.CrossrefGoogle Scholar

  • [9] C. Su, A. Lu, C. Wu, K. Liu, W. Zhang, S. Lin, Z. Juang, Y. Zhong, F. Chen and L. Li, ”Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chem- ical Vapor Deposition”, Nano Letters, vol. 11, no. 9, 2011, pp. 3612-3616. CrossrefGoogle Scholar

About the article

Received: 2016-07-07

Published Online: 2017-03-14

Published in Print: 2017-01-01


Citation Information: Journal of Electrical Engineering, Volume 68, Issue 1, Pages 79–82, ISSN (Online) 1339-309X, DOI: https://doi.org/10.1515/jee-2017-0011.

Export Citation

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License. BY-NC-ND 4.0

Citing Articles

Here you can find all Crossref-listed publications in which this article is cited. If you would like to receive automatic email messages as soon as this article is cited in other publications, simply activate the “Citation Alert” on the top of this page.

[1]
Petr Machac and Ondrej Hejna
Materials Science Forum, 2018, Volume 919, Page 207

Comments (0)

Please log in or register to comment.
Log in