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Journal of Electrical Engineering

The Journal of Slovak University of Technology

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Volume 68, Issue 1


Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Petr Macháč / Ondřej Hejna / Petr Slepička
Published Online: 2017-03-14 | DOI: https://doi.org/10.1515/jee-2017-0011


The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene films and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

Keywords: graphene; cold wall reactor; CVD process; transfer free process


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About the article

Received: 2016-07-07

Published Online: 2017-03-14

Published in Print: 2017-01-01

Citation Information: Journal of Electrical Engineering, Volume 68, Issue 1, Pages 79–82, ISSN (Online) 1339-309X, DOI: https://doi.org/10.1515/jee-2017-0011.

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© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License. BY-NC-ND 4.0

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