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Journal of Non-Equilibrium Thermodynamics

Founded by Keller, Jürgen U.

Editor-in-Chief: Hoffmann, Karl Heinz

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Ed. by Michaelides, Efstathios E. / Rubi, J. Miguel

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Volume 43, Issue 2


Non-Equilibrium Dislocation Dynamics in Semiconductor Crystals and Superlattices

David Jou / Liliana Restuccia
  • Corresponding author
  • 18980 University of Messina, Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, Contrada Papardo, Viale Ferdinando Stagno d’Alcontres, 98166 Messina, Italy
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Published Online: 2018-03-15 | DOI: https://doi.org/10.1515/jnet-2018-0002


A model for semiconductor crystals and superlattices with dislocations proposed in a previous paper is used here to study the thermal, electrical and mechanical properties of these defective materials. The standard procedures of non-equilibrium thermodynamics with internal variables are applied to derive in the linear approximation constitutive equations as well as rate equations for the dislocation, charges and heat flux fields, containing coupled effects among the different fields. A new dislocation tensor is used to describe the geometry of the dislocation lines, because their relative orientation with respect to the superlattice interfaces is very relevant.

Keywords: Non-equilibrium thermodynamics with internal variables; Semiconductors; Superlattices; Dislocations


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About the article

Received: 2018-01-11

Revised: 2018-02-13

Accepted: 2018-02-17

Published Online: 2018-03-15

Published in Print: 2018-04-25

Funding Source: Ministerio de Economía y Competitividad

Award identifier / Grant number: TEC2015-67462-C2-2-R

D. J. acknowledges the finantial support of the Spanish Ministry of Economy and Competitiveness under grant TEC2015-67462-C2-2-R. L. R. acknowledges the support of “National Group of Mathematical Physics, GNFM-INdAM”.

Citation Information: Journal of Non-Equilibrium Thermodynamics, Volume 43, Issue 2, Pages 163–170, ISSN (Online) 1437-4358, ISSN (Print) 0340-0204, DOI: https://doi.org/10.1515/jnet-2018-0002.

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