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Monte Carlo Methods and Applications

Managing Editor: Sabelfeld, Karl K.

Editorial Board: Binder, Kurt / Bouleau, Nicolas / Chorin, Alexandre J. / Dimov, Ivan / Dubus, Alain / Egorov, Alexander D. / Ermakov, Sergei M. / Halton, John H. / Heinrich, Stefan / Kalos, Malvin H. / Lepingle, D. / Makarov, Roman / Mascagni, Michael / Mathe, Peter / Niederreiter, Harald / Platen, Eckhard / Sawford, Brian R. / Schmid, Wolfgang Ch. / Schoenmakers, John / Simonov, Nikolai A. / Sobol, Ilya M. / Spanier, Jerry / Talay, Denis

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Online
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1569-3961
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Volume 10, Issue 3-4

Issues

Full band Monte Carlo simulation - beyond the semiclassical approach

Hans-Erik Nilsson
  • Corresponding author
  • Department of Information Technology and Media, Mid-Sweden University, SE-851 70 Sundsvall, Sweden
  • Solid State Electronics, Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
/ Antonio Martinez
  • Solid State Electronics, Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
/ Mats Hjelm
  • Department of Information Technology and Media, Mid-Sweden University, SE-851 70 Sundsvall, Sweden
  • Solid State Electronics, Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
Published Online: 2008-05-09 | DOI: https://doi.org/10.1515/mcma.2004.10.3-4.481

A quantum mechanical extension of the full band ensemble Monte Carlo (MC) simulation method is presented. The new approach goes beyond the traditional semi-classical method generally used in MC simulations of charge transport in semiconductor materials and devices. The extension is necessary in high-field simulations of semiconductor materials with a complex unit cell, such as the hexagonal SiC polytypes or wurtzite GaN. Instead of complex unit cells the approach can also be used for super-cells, in order to understand charge transport at surfaces, around point defects, or in quantum wells.

Keywords: Monte Carlo methods; charge transport; semiconductor device simulation; quantum transport

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Published Online: 2008-05-09

Published in Print: 2004-12-01


Citation Information: Monte Carlo Methods and Applications mcma, Volume 10, Issue 3-4, Pages 481–490, ISSN (Online) 1569-3961, ISSN (Print) 0929-9629, DOI: https://doi.org/10.1515/mcma.2004.10.3-4.481.

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