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Metrology and Measurement Systems

The Journal of Committee on Metrology and Scientific Instrumentation of Polish Academy of Sciences

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Volume 23, Issue 3


Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

Damian Bisewski / Marcin Myśliwiec
  • Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Nowowiejska 15/19, 00-665 Warsaw, Poland
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/ Krzysztof Górecki
  • Corresponding author
  • Gdynia Maritime University, Faculty of Electrical Engineering, Morska 83, 81-225 Gdynia, Poland
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/ Ryszard Kisiel
  • Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Nowowiejska 15/19, 00-665 Warsaw, Poland
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/ Janusz Zarębski
Published Online: 2016-07-14 | DOI: https://doi.org/10.1515/mms-2016-0033


This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

Keywords: Schottky diodes; transient thermal impedance; thermal measurements; silicon carbide; packaging


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About the article

Received: 2015-12-01

Accepted: 2016-04-11

Published Online: 2016-07-14

Published in Print: 2016-09-01

Citation Information: Metrology and Measurement Systems, Volume 23, Issue 3, Pages 451–459, ISSN (Online) 2300-1941, DOI: https://doi.org/10.1515/mms-2016-0033.

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