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Simple modeling of the ratio of fields at a tip and at contacting surface

E. G. Bortchagovsky
  • Corresponding author
  • Institute of Semiconductor Physics of NASU, pr. Nauki 41, 03028 Kiev, Ukraine
  • Other articles by this author:
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Published Online: 2016-06-28 | DOI: https://doi.org/10.1515/nansp-2016-0002


The proposed concept of Raman probe for nearfield optical microscopy raises the question about the similarity of fields acting on specimens deposited at the tip apex and contacting surface. The signal generated at these two close but different points is defined by local fields, so it is the ratio of the fields at these points, that is the quantity of interest here. This work is concerned with the application of a simple dipole model for the analysis of the ratio of fields at the tip apex and at contacting surface as a function of their separation.

Keywords: dipole interaction; image dipole; scanning near-field optical microscopy; tip-enhanced Raman scattering; Raman probe; field enhancement


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About the article

Received: 2015-12-01

Accepted: 2016-02-24

Published Online: 2016-06-28

Citation Information: Nanospectroscopy, Volume 2, Issue 1, ISSN (Online) 2300-3537, DOI: https://doi.org/10.1515/nansp-2016-0002.

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© 2016 E. G. Bortchagovsky. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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