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Opto-Electronics Review

Editor-in-Chief: Jaroszewicz, Leszek

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1896-3757
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Volume 14, Issue 3 (Sep 2006)

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Towards focusing using photonic crystal flat lens

N. Fabre
  • Institut d’Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq Cedex, France
  • Email:
/ S. Fasquel
  • Institut d’Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq Cedex, France
  • Email:
/ C. Legrand
  • Institut d’Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq Cedex, France
  • Email:
/ X. Mélique
  • Institut d’Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq Cedex, France
  • Email:
/ M. Muller
  • Institut d’Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq Cedex, France
  • Email:
/ M. François
  • Institut d’Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq Cedex, France
  • Email:
/ O. Vanbésien
  • Institut d’Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq Cedex, France
  • Email:
/ D. Lippens
  • Institut d’Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq Cedex, France
  • Email:
Published Online: 2006-09-01 | DOI: https://doi.org/10.2478/s11772-006-0030-0

Abstract

We report on the numerical simulation and fabrication of a two-dimensional flat lens based on negative refraction in photonic crystals. The slab acting as a lens is made of an hole array (operating at the wavelength of 1.5 μm) etched in a InP/InGaAsP/InP semiconductor layer. We first study the key issues for the achievement of a negative refractive index taking advantage of folding of dispersion branches with main emphasis in dispersion properties rather than the opening of forbidden gaps. The diffraction and refraction regimes are analysed according to the comparison of the wave-vector with respect to the relevant dimensions of the hole array. In the second stage, we illustrate technological challenges in terms of e-beam lithography on a sub-micron scale and deep reactive ion etching for an indium phosphide based technology.

Keywords: negative refraction; optical wavelengths; photonic crystals fabrication

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About the article

Published Online: 2006-09-01

Published in Print: 2006-09-01


Citation Information: Opto-Electronics Review, ISSN (Online) 1896-3757, DOI: https://doi.org/10.2478/s11772-006-0030-0. Export Citation

© 2006 SEP, Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. (CC BY-NC-ND 3.0)

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