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BY-NC-ND 3.0 license Open Access Published by De Gruyter September 5, 2010

Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg1−xCdxTe at passivation by epitaxially grown in situ CdTe

  • A.V. Voitsekhovskii EMAIL logo , S.N. Nesmelov , S.M. Dzyadukh , V.S. Varavin , S.A. Dvoretskii , N.N. Mikhailov , Yu.G. Sidorov and M.V. Yakushev
From the journal Opto-Electronics Review

Abstract

The electrical properties of the interface between Hg1−xCdxTe (x = 0.22 and x = 0.32–0.36) and CdTe prepared in situ molecular beam epitaxy were estimated at 77 K. The methods of determination of main parameters of interface semiconductor/insulator and insulator from capacitance-voltage characteristics of MIS-structures based on graded-band Hg1−xCdxTe have been developed. The fixed charge states density, fast surface states density, and density of mobile charge are obtained from capacitance-voltage measurements. For improvement in stable and electrical strength of insulator coating for several samples over CdTe additional protective layers SiO2-Si3N4 are formed for x = 0.22 and ZnTe for x = 0.32–0.36.

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Published Online: 2010-9-5
Published in Print: 2010-9-1

© 2010 SEP, Warsaw

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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