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Opto-Electronics Review

Editor-in-Chief: Jaroszewicz, Leszek

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1896-3757
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Volume 19, Issue 2

Issues

Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

M. Motyka
  • Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50-370, Wrocław, Poland
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/ F. Janiak
  • Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50-370, Wrocław, Poland
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/ K. Ryczko
  • Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50-370, Wrocław, Poland
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/ G. Sęk
  • Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50-370, Wrocław, Poland
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/ J. Misiewicz
  • Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50-370, Wrocław, Poland
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/ A. Bauer
  • Technische Physik, University of Würzburg, Wilhelm-Conrad-Rötgen-Research Center for Complex Material Systems, Am Hubland, D-97074, Würzburg, Germany
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/ R. Weih
  • Technische Physik, University of Würzburg, Wilhelm-Conrad-Rötgen-Research Center for Complex Material Systems, Am Hubland, D-97074, Würzburg, Germany
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/ S. Höfling
  • Technische Physik, University of Würzburg, Wilhelm-Conrad-Rötgen-Research Center for Complex Material Systems, Am Hubland, D-97074, Würzburg, Germany
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/ M. Kamp
  • Technische Physik, University of Würzburg, Wilhelm-Conrad-Rötgen-Research Center for Complex Material Systems, Am Hubland, D-97074, Würzburg, Germany
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/ A. Forchel
  • Technische Physik, University of Würzburg, Wilhelm-Conrad-Rötgen-Research Center for Complex Material Systems, Am Hubland, D-97074, Würzburg, Germany
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Published Online: 2011-04-08 | DOI: https://doi.org/10.2478/s11772-011-0016-4

Abstract

Modulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap ‘W’-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3–4 μm for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.

Keywords: Fourier-transformed photoreflectance; type II quantum well; mid-infrared; resonant states

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About the article

Published Online: 2011-04-08

Published in Print: 2011-06-01


Citation Information: Opto-Electronics Review, Volume 19, Issue 2, Pages 137–139, ISSN (Online) 1896-3757, DOI: https://doi.org/10.2478/s11772-011-0016-4.

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© 2011 SEP, Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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