Jump to ContentJump to Main Navigation
Show Summary Details
More options …

Opto-Electronics Review

Editor-in-Chief: Jaroszewicz, Leszek

Open Access
See all formats and pricing
More options …
Volume 19, Issue 2


Study of MOCVD growth of InGaAsSb/AlGaAsSb/GaSb heterostructures using two different aluminium precursors TMAl and DMEAAl

M. Wesołowski / W. Strupiński / M. Motyka / G. Sęk / E. Dumiszewska / P. Caban / A. Jasik / A. Wójcik / K. Pierściński / D. Pierścińska
Published Online: 2011-04-08 | DOI: https://doi.org/10.2478/s11772-011-0020-8


The antimonide laser heterostructures growth technology using MBE epitaxy is currently well-developed, while MOVPE method is still being improved. It is known that the principal problem for MOVPE is the oxygen and carbon contamination of aluminium containing waveguides and claddings. The solution would be to apply a proper aluminium precursor. In this study we present the results of metal-organic epitaxy of In- and Al-containing layers and quantum well structures composing antimonide lasers devices. Special emphasis was put on the aluminium precursor and its relation to AlGaSb and AlGaAsSb materials properties. The crystalline quality of the layers grown with two different Al precursors was compared, very good structural quality films were obtained. The results suggested a substantial influence of precursors pre-reactions on the epitaxial process. The oxygen contamination was measured by SIMS, which confirmed its dependence on the precursor choice. We also optimised the GaSb substrate thermal treatment to deposit high quality GaSb homoepitaxial layers. Quaternary InGaAsSb layers were obtained even within the predicted miscibility gap, when arsenic content reached high above 10% values. InGa(As)Sb/AlGa(As)Sb quantum wells were grown and their optical properties were characterised by photoluminescence and photoreflectance spectroscopy. Type-I quantum wells showed a fundamental optical transition in the 1.9–2.1 μm range at room temperature. The epitaxial technology of the structures was subjected to an optimisation procedure. The investigated layers and heterostructures can be considered for application in laser devices.

Keywords: MOCVD; antimonides; quantum wells; AlGaAsSb; InGaAsSb

  • [1] J.G. Kim, L. Shterengas, R.U. Martinelli, and G.L. Belenky, “High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers”, Appl. Phys. Lett. 83, 1926–1928 (2003). http://dx.doi.org/10.1063/1.1605245CrossrefGoogle Scholar

  • [2] M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, “GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power”, Appl. Phys. Lett. 88, 081115–081117 (2006). http://dx.doi.org/10.1063/1.2178506CrossrefGoogle Scholar

  • [3] A. Joullie and P. Christol, “GaSb-based mid-infrared 2-5-μm laser diodes”, CR Phys. 4, 621–637 (2003). http://dx.doi.org/10.1016/S1631-0705(03)00098-7CrossrefGoogle Scholar

  • [4] C.A. Wang and H.K. Choi, “GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapour phase epitaxy”, Appl. Phys. Lett. 70, 802–804 (1997). http://dx.doi.org/10.1063/1.118227CrossrefGoogle Scholar

  • [5] C.A. Wang, “Organometallic vapour phase epitaxial growth of AlSb-based alloys”, J. Cryst. Growth 170, 725–731 (1997). http://dx.doi.org/10.1016/S0022-0248(96)00579-9CrossrefGoogle Scholar

  • [6] C.A. Wang, K.F. Jensen, A.C. Jones, and H.K. Choi, “n-AlGaSb and GaSb/AlGaSb double-heterostructure lasers grown by organometallic vapour phase epitaxy”, Appl. Phys. Lett. 68, 400–402 (1996). http://dx.doi.org/10.1063/1.116698CrossrefGoogle Scholar

  • [7] C.A. Wang and H.K. Choi, “OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers”, J. Electron. Mater. 26, 1231–1236 (1997). http://dx.doi.org/10.1007/s11664-997-0025-8CrossrefGoogle Scholar

  • [8] Z. Yin and X. Tang, “A review of energy bandgap engineering in III–V semiconductor alloys for mid-infrared laser applications”, Solid-State Electron. 51, 6–15 (2007). http://dx.doi.org/10.1016/j.sse.2006.12.005CrossrefGoogle Scholar

  • [9] C.A. Wang, “Progress and continuing challenges in GaSb-based III–V alloys and heterostructures grown by organometallic vapour-phase epitaxy”, J. Cryst. Growth 272, 664–681 (2004). http://dx.doi.org/10.1016/j.jcrysgro.2004.09.019CrossrefGoogle Scholar

  • [10] P.S. Dutta and H.L. Bhat, “The physics and technology of gallium antimonide: An emerging optoelectronic material”, J. Appl. Phys. 81, 5821–5870 (1997). http://dx.doi.org/10.1063/1.365356CrossrefGoogle Scholar

  • [11] B.R. Bennett, R. Magno, J.B. Boos, W. Kruppa, and M.G. Ancona, “Antimonide-based compound semiconductor electronics: A review”, Solid-State Electron. 49, 1875–1895 (2005). http://dx.doi.org/10.1016/j.sse.2005.09.008CrossrefGoogle Scholar

  • [12] E. Plis, J.B. Rodriguez, H.S. Kim, G. Bishop, Y.D. Sharma, L.R. Dawson, S. Krishn, S.J. Lee, C.E. Jones, and V. Gopal, “Type II InAs/GaSb strain layer superlattice detectors with p-on-n polarity”, Appl. Phys. Lett. 91, 133512–133514 (2007). http://dx.doi.org/10.1063/1.2790078Web of ScienceCrossrefGoogle Scholar

  • [13] J.G. Cederberg, M.J. Hafich, R.M. Biefeld, and M. Palmisiano, “The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapour deposition”, J. Cryst. Growth 248, 289–295 (2003). http://dx.doi.org/10.1016/S0022-0248(02)01927-9CrossrefGoogle Scholar

  • [14] M.G. Mauk and V.M. Andreev, “GaSb-related materials for TPV cells”, Semicond. Sci. Tech. 18, 191–201 (2003). http://dx.doi.org/10.1088/0268-1242/18/5/308CrossrefGoogle Scholar

  • [15] A. Aardvark, N.J. Mason, and P.J. Walker, “The growth of antimonides by MOVPE”, Prog. Cryst. Growth Ch. 35, 207–241 (1997). http://dx.doi.org/10.1016/S0960-8974(98)00004-7CrossrefGoogle Scholar

  • [16] F. Dimroth, C. Agert, and A.W. Bett, “Growth of Sb-based materials by MOVPE”, J. Cryst. Growth 248, 265–273 (2003). http://dx.doi.org/10.1016/S0022-0248(02)01818-3CrossrefGoogle Scholar

  • [17] Ch. Giesen, A. Szymakowski, S. Rushworth, M. Heuken, and K. Heime, “MOVPE of AlGaAsSb using TTBAl as an alternative aluminium precursor”, J. Cryst. Growth 221, 450–455 (2000). http://dx.doi.org/10.1016/S0022-0248(00)00739-9CrossrefGoogle Scholar

  • [18] R.M. Biefeld, “The metal-organic chemical vapour deposition and properties of III–V antimony-based semiconductor materials”, Mater. Sci. Eng. 36, 105–142 (2002). http://dx.doi.org/10.1016/S0927-796X(02)00002-5CrossrefGoogle Scholar

  • [19] J.J. Hill, A.A. Aquino, C.P.A. Mulcahy, N. Harwood, A.C. Jones, and T.S. Jones, “The adsorption and thermal decomposition of trimethylaluminium and dimethylaluminium hydride on GaAs(100)”, Surf. Sci. 340, 49–56 (1995). http://dx.doi.org/10.1016/0039-6028(95)00683-4CrossrefGoogle Scholar

About the article

Published Online: 2011-04-08

Published in Print: 2011-06-01

Citation Information: Opto-Electronics Review, Volume 19, Issue 2, Pages 140–144, ISSN (Online) 1896-3757, DOI: https://doi.org/10.2478/s11772-011-0020-8.

Export Citation

© 2011 SEP, Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

Comments (0)

Please log in or register to comment.
Log in