Skip to content
BY-NC-ND 3.0 license Open Access Published by De Gruyter October 17, 2012

Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors

  • F. Sizov EMAIL logo , A. Golenkov , D. But , M. Sakhno and V. Reva
From the journal Opto-Electronics Review

Abstract

Room temperature operating n-MOSFETs (n-type metal-oxide silicon field effect transistors) used for registration of sub-THz (sub-terahertz) radiation in the frequency range ν = 53−145 GHz are considered. n-MOSFETs were manufactured by 1-μm Si CMOS technology applied to epitaxial Si-layers (d ≈15 μm) deposited on thick Si substrates (d = 640 μm). It was shown that for transistors with the channel width to length ratio W/L = 20/3 μm without any special antennas used for radiation input, the noise equivalent power (NEP) for radiation frequency ν ≈76 GHz can reach NEP ∼6×10−10 W/Hz1/2. With estimated frequency dependent antenna effective area Sest for contact wires considered as antennas, the estimated possible noise equivalent power NEPpos for n-MOSFET structures themselves can be from ∼15 to ∼103 times better in the specral range of ν ∼55–78 GHz reaching NEPpos ≈10−12 W/Hz1/2.

[1] F. Sizov, “THz radiation sensors”, Opto-Electron. Rev. 18, 10–36 (2010). http://dx.doi.org/10.2478/s11772-009-0029-410.2478/s11772-009-0029-4Search in Google Scholar

[2] M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor. New mechanism of plasma wave generation by dc current”, Phys. Rev. Lett. 71, 24652468 (1993). http://dx.doi.org/10.1103/PhysRevLett.71.246510.1103/PhysRevLett.71.2465Search in Google Scholar PubMed

[3] M. Dyakonov and M. Shur, “Detection mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid”, IEEE Trans. Electr. Devices 43, 380–387 (1996). 10.1109/16.485650Search in Google Scholar

[4] W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors”, Appl. Phys. Lett. 85, 675–677 (2004). http://dx.doi.org/10.1063/1.177503410.1063/1.1775034Search in Google Scholar

[5] R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D.K. Maude, S. Rumyantsev, and M.S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power”, Appl. Phys. Lett. 89, 253511 (2006). http://dx.doi.org/10.1063/1.241021510.1063/1.2410215Search in Google Scholar

[6] E. Öjefors, U.R. Pfeiffer, A. Lisauskas, and H.G. Roskos, “A 0.65 THz focal-plane array in a quarter-micron CMOS process technology”, IEEE J. Solid-St. Circuits 44, 1968–1976 (2009). http://dx.doi.org/10.1109/JSSC.2009.202191110.1109/JSSC.2009.2021911Search in Google Scholar

[7] F. Schuster, D. Coquillat, H. Videlier, M. Sakowicz, F. Teppe, L. Dussopt, B. Giffard, T. Skotnicki, and W. Knap, “Broadband terahertz imaging with highly sensitive silicon CMOS detectors”, Opt. Express 19, 7827–7832 (2011). http://dx.doi.org/10.1364/OE.19.00782710.1364/OE.19.007827Search in Google Scholar PubMed

[8] E. Öjefors, N. Baktash, Y. Zhao, R. Al Hadi, H. Sherry, and U. Pfeiffer, “Terahertz imaging detectors in a 65-nm CMOS SOI technology”, Proc. the 37 thEuropean Conf. Solid-St. Circuits, Seville, 486–489 (2010). 10.1109/ESSCIRC.2010.5619749Search in Google Scholar

[9] S.L. Rumyantsev, K. Fobelets, D. Veksler, T. Hackbarth, and M. Shur, “Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation”, Semicond. Sci. Technol. 23, 105001 (2008). http://dx.doi.org/10.1088/0268-1242/23/10/10500110.1088/0268-1242/23/10/105001Search in Google Scholar

[10] W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y.M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and First Imaging Applications”, J. Infrared Milli. Terahz. Waves 30, 1319–1337 (2009). Search in Google Scholar

[11] A. Lisauskas, D. Glaab, H.G. Roskos, E.U. Oejefors, and R. Pfeiffer, “Terahertz imaging with Si MOSFET focal-plane arrays”, Proc. SPIE 7215, 72150J-11 (2009). 10.1117/12.809552Search in Google Scholar

[12] A. Lisauskas, U. Pfeiffer, E. Öjefors, P.H. Bolivar, D. Glaab, and H.G. Roskos, “Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors”, J. Appl. Phys. 105, 114511 (2009). http://dx.doi.org/10.1063/1.314061110.1063/1.3140611Search in Google Scholar

[13] M. Sakowicz, M.B. Lifshits, O.A. Klimenko, F. Schuster, D. Coquillat, F. Teppe, and W. Knap, “Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects”, J. Appl. Phys. 110, 054512 (2011). http://dx.doi.org/10.1063/1.363205810.1063/1.3632058Search in Google Scholar

[14] C.A. Balanis, Antenna Theory: Analysis and Design, Wiley, New Jersey, 2005. Search in Google Scholar

[15] Antenna Engineering Handbook, edited by J.L. Volakis, McGraw-Hill, New York 2007. Search in Google Scholar

[16] F. Sizov, V. Reva, A. Golenkov, and V. Zabudsky, “Un-cooled detectors challenges for THz/sub-THz arrays imaging”, J. Infrared Milli. Terahz. Waves, 32, 1192–1206 (2011). http://dx.doi.org/10.1007/s10762-011-9789-210.1007/s10762-011-9789-2Search in Google Scholar

[17] M. Sakowicz, J. Lusakowski, K. Karpierz, M. Grynberg, W. Knap, and W. Gwarek, “Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors”, J. Appl. Phys. 104, 024519 (2008). http://dx.doi.org/10.1063/1.295706510.1063/1.2957065Search in Google Scholar

[18] Y. Deng and M.S. Shur, “Electron mobility and terahertz detection using silicon MOSFETs”, Solid-St. Electr. 47, 1559–1563 (2003). http://dx.doi.org/10.1016/S0038-1101(03)00074-110.1016/S0038-1101(03)00074-1Search in Google Scholar

Published Online: 2012-10-17
Published in Print: 2012-6-1

© 2012 SEP, Warsaw

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Downloaded on 29.3.2024 from https://www.degruyter.com/document/doi/10.2478/s11772-012-0024-z/html
Scroll to top button