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Opto-Electronics Review

Editor-in-Chief: Jaroszewicz, Leszek

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Volume 20, Issue 3

Issues

History of infrared detectors

A. Rogalski
Published Online: 2012-07-04 | DOI: https://doi.org/10.2478/s11772-012-0037-7

Abstract

This paper overviews the history of infrared detector materials starting with Herschel’s experiment with thermometer on February 11th, 1800. Infrared detectors are in general used to detect, image, and measure patterns of the thermal heat radiation which all objects emit. At the beginning, their development was connected with thermal detectors, such as thermocouples and bolometers, which are still used today and which are generally sensitive to all infrared wavelengths and operate at room temperature. The second kind of detectors, called the photon detectors, was mainly developed during the 20th Century to improve sensitivity and response time. These detectors have been extensively developed since the 1940’s. Lead sulphide (PbS) was the first practical IR detector with sensitivity to infrared wavelengths up to ∼3 μm. After World War II infrared detector technology development was and continues to be primarily driven by military applications. Discovery of variable band gap HgCdTe ternary alloy by Lawson and co-workers in 1959 opened a new area in IR detector technology and has provided an unprecedented degree of freedom in infrared detector design. Many of these advances were transferred to IR astronomy from Departments of Defence research. Later on civilian applications of infrared technology are frequently called “dual-use technology applications.” One should point out the growing utilisation of IR technologies in the civilian sphere based on the use of new materials and technologies, as well as the noticeable price decrease in these high cost technologies. In the last four decades different types of detectors are combined with electronic readouts to make detector focal plane arrays (FPAs). Development in FPA technology has revolutionized infrared imaging. Progress in integrated circuit design and fabrication techniques has resulted in continued rapid growth in the size and performance of these solid state arrays.

Keywords: thermal and photon detectors; lead salt detectors; HgCdTe detectors; microbolometers; focal plane arrays

  • [1] W. Herschel, “Experiments on the refrangibility of the invisible rays of the Sun,” Phil. Trans. Roy. Soc. London 90, 284–292 (1800). CrossrefGoogle Scholar

  • [2] http://coolcosmos.ipac.caltech.edu/sitemap.html#cosmicclas sroom Google Scholar

  • [3] E.S. Barr, “Historical survey of the early development of the infrared spectral region,” Amer. J. Phys. 28, 42–54 (1960). http://dx.doi.org/10.1119/1.1934975CrossrefGoogle Scholar

  • [4] E.S. Barr, “The infrared pioneers — I. Sir William Herschel,” Infrared Phys. 1, 1 (1961). http://dx.doi.org/10.1016/0020-0891(61)90037-9CrossrefGoogle Scholar

  • [5] R.A. Smith, F.E. Jones, and R.P. Chasmar, The Detection and Measurement of Infrared Radiation, Clarendon, Oxford, 1958. Google Scholar

  • [6] P.W. Kruse, L.D. McGlauchlin and R.B. McQuistan, Elements of Infrared Technology, Wiley, New York, 1962. Google Scholar

  • [7] R.D. Hudson, Infrared System Engineering, Wiley-Interscience, New Jersey, 1969. Google Scholar

  • [8] E.S. Barr, “The infrared pioneers — II. Macedonio Melloni,” Infrared Phys. 2, 67–73 (1962). http://dx.doi.org/10.1016/0020-0891(62)90023-4CrossrefGoogle Scholar

  • [9] E.S. Barr, “The Infrared Pioneers — III. Samuel Pierpont Langley,” Infrared Phys. 3, 195–206 (1963). http://dx.doi.org/10.1016/0020-0891(63)90024-1CrossrefGoogle Scholar

  • [10] L.M. Biberman and R.L. Sendall, “Chapter 1. Introduction: A brief history of imaging devices for night vision,” in Electro-Optical Imaging: System Performance and Modeling, edited by L.M. Biberman, pp. 1-1–1-26, SPIE Press, Bellingham, 2000. Google Scholar

  • [11] J. Caniou, Passive Infrared Detection: Theory and Application, Kluwer Academic Publishers, Dordrecht, 1999 Google Scholar

  • [12] K. Herrmann and L. Walther, Wissensspeicher Infrarottechnik (Store of Knowledge in Infrared Technology), Fachbuchverlag, Leipzig, 1990. Google Scholar

  • [13] T.J. Seebeck, “Magnetische Polarisation der Metalle und Erze durch Temperatur-Differenz,” Abh. Deutsch. Akad. Wiss. Berlin, 265–373 (1822). Google Scholar

  • [14] http://catalogue.museogalileo.it/section/ElectricityMagnetism.html. Google Scholar

  • [15] http://earthobservatory.nasa.gov/Features/Langley/langley_2.php. Google Scholar

  • [16] S.P. Langley, “The bolometer and radiant energy,” Proc. Am. Academy of Arts and Sciences 16, 342–358 (May 1880–Jun. 1881). Google Scholar

  • [17] C.D. Walcott, Samuel Pierpont Langley, City of Washington, The National Academy of Science, April, 1912. Google Scholar

  • [18] W. Smith, “Effect of light on selenium during the passage of an electric current,” Nature 7, 303 (1873). Google Scholar

  • [19] M. F. Doty, Selenium, List of References, 1917–1925, New York Public Library, New York, 1927. Google Scholar

  • [20] Applied Optics (November, 1963), commemorative issue with extensive material on Coblentz’s scientific work Google Scholar

  • [21] W.F. Meggers, William Weber Coblentz.1873–196, National Academy of Science, Washingthon, 1967. Google Scholar

  • [22] H. Hertz, “Ueber den Einfluss des ultravioletten Lichtes auf die electrische Entladung,” Annalen der Physik 267(8) 983–1000 (1887). http://dx.doi.org/10.1002/andp.18872670827CrossrefGoogle Scholar

  • [23] J. Elster, H. Geitel, “Ueber die Entladung negativ electrischer Korper durch das Sonnen- und Tageslicht,” Ann. Physik 497–514 (1889). Google Scholar

  • [24] F. Braun, “Uber die Stromleitung durch Schwefelmetalic,” Annalen der Physik and Chemie 153(4), 556–563 (1874). Google Scholar

  • [25] J. C. Bose, “Detector for electrical disturbances,” U. S. Patent 755,840 (Filed September 30, 1901. Issued March 29, 1904). Google Scholar

  • [26] T.W. Case, “Notes on the change of resistance of certain substrates in light,” Phys. Rev. 9, 305–310 (1917). http://dx.doi.org/10.1103/PhysRev.9.305CrossrefGoogle Scholar

  • [27] S.F. Johnson, A History of Light and Colour Measurement. Science in the Shadows, IOP Publishing Ltd, Bristol, 2001. http://dx.doi.org/10.1887/0750307544CrossrefGoogle Scholar

  • [28] T.W. Case, “The thalofide cell — a new photoelectric substance,” Phys. Rev. 15, 289 (1920). http://dx.doi.org/10.1103/PhysRev.15.289CrossrefGoogle Scholar

  • [29] G. Holst, J.H. de Boer, M.C. Teves, and C.F. Veenemans, “Foto-electrische cel en inrichting waarmede uit een primair, door directe lichtstralen gevormd beeld een geheel ofnagenoeg geheel conform secundair optisch beeld kan,” Dutch Patent 27062 (1928), British Patent 326200; D.R.P. 535208; “An apparatus for the transformation of light of long wavelength into light of short wavelength,” Physica 1, 297–305 (1934). Google Scholar

  • [30] L. Koller, “Photoelectric emission from thin films of caesium,” Phys. Rev. 36, 1639–1647 (1930); N.R. Campbell, ”Photoelectric emission of thin films,” Phil. Mag. 12, 173–185(1931). http://dx.doi.org/10.1103/PhysRev.36.1639CrossrefGoogle Scholar

  • [31] A.M. Glover, “A review of the development of sensitive phototubes,” Proc. IRE, 413–423, August 1941. Google Scholar

  • [32] S. Asao and M. Suzuki, “Improvement of thin film caesium photoelectric tube,” Proc. Phys. Math. Soc. (Japan, series 3), 12, 247–250. October 1930. Google Scholar

  • [33] V.P. Ponomarenko and A.M. Filachev, Infrared Techniques and Electro-Optics in Russia: A History 1946–2006, SPIE Press, Bellingham, 2007. Google Scholar

  • [34] E. W. Kutzscher, “Review on detectors of infrared radiation,” Electro-Opt. Syst. Design 5, 30 (June 1973). Google Scholar

  • [35] W.N. Arnquist, “Survey of early infrared developments,” Proc. IRE 47 1420–1430 (1959). http://dx.doi.org/10.1109/JRPROC.1959.287029CrossrefGoogle Scholar

  • [36] R.J. Cushman, “Film-type infrared photoconductors,” Proc. IRE 47, 1471–1475 (1959). http://dx.doi.org/10.1109/JRPROC.1959.287039CrossrefGoogle Scholar

  • [37] D.J. Lovell, “Cashman thallous sulfide cell,” Appl. Opt. 10, 1003–1008 (1971). http://dx.doi.org/10.1364/AO.10.001003CrossrefGoogle Scholar

  • [38] D.J. Lovell, “The development of lead salt detectors,” Amer. J. Phys. 37, 467–478 (1969). http://dx.doi.org/10.1119/1.1975646CrossrefGoogle Scholar

  • [39] M. Judt and B. Ciesla, Technology Transfer out of Germany after 1945, Routledge Studies in the History of Science, Technology and Medicine, Overseas Publishers Association, Amsterdam, 1996. Google Scholar

  • [40] P.R. Norton, “Infrared detectors in the next millennium,” Proc. SPIE 3698, 652–665 (1999) http://dx.doi.org/10.1117/12.354568CrossrefGoogle Scholar

  • [41] A. Rogalski, Infrared Detectors, 2nd edition, CRC Press, Boca Raton, 2010. http://dx.doi.org/10.1201/b10319CrossrefGoogle Scholar

  • [42] R.C. Jones, “Phenomenological description of the response and detecting ability of radiation detectors,” Proc. IRE 47, 1495–1502 (1959). http://dx.doi.org/10.1109/JRPROC.1959.287047CrossrefGoogle Scholar

  • [43] P.W. Kruse, Uncooled Thermal Imaging, SPIE Press, Bellingham, 2001. http://dx.doi.org/10.1117/3.415351CrossrefGoogle Scholar

  • [44] P. Norton, “Third-generation sensors for night vision,” Opto- -Electron. Rev. 14, 1–10 (2006). http://dx.doi.org/10.2478/s11772-006-0001-5CrossrefGoogle Scholar

  • [45] http://www.nvl.army.mil/history.html Google Scholar

  • [46] “Sidewinder article”, http://wiki.scramble.nl/index.php-title =Sidewinder_article Google Scholar

  • [47] http://ookaboo.com/o/pictures/picture/21952750/Prototype _Sidewinder1_missile_on_an_AD4_ Google Scholar

  • [48] B.V. Rollin and E.L. Simmons, “Long wavelength infrared photoconductivity of silicon at low temperatures,” Proc. Phys. Soc. B65, 995–996 (1952). CrossrefGoogle Scholar

  • [49] E. Burstein, J.J. Oberly, and J.W. Davisson, “Infrared photoconductivity due to neutral impurities in silicon,” Phys. Rev. 89(1), 331–332 (1953). http://dx.doi.org/10.1103/PhysRev.89.331CrossrefGoogle Scholar

  • [50] E. Burstein, G. Pines and N. Sclar, “Optical and photoconductive properties of silicon and germanium,” in Photoconductivity Conference at Atlantic City, edited by R. Breckenbridge, B. Russell and E. Hahn, pp. 353–413, Wiley, New York, 1956. Google Scholar

  • [51] S. Borrello and H. Levinstein, “Preparation and properties of mercury moped germanium,” J. Appl. Phys. 33, 2947–2950 (1962). http://dx.doi.org/10.1063/1.1728540CrossrefGoogle Scholar

  • [52] R. A. Soref, “Extrinsic IR potoconductivity of Si dped with B, Al, Ga, P, As or Sb,” J. Appl. Phys. 38, 5201–5209 (1967). http://dx.doi.org/10.1063/1.1709302CrossrefGoogle Scholar

  • [53] W.S. Boyle and G.E. Smith, “Charge-coupled semiconductor devices,” Bell Syst. Tech. J. 49, 587–593 (1970). CrossrefGoogle Scholar

  • [54] F. Shepherd and A. Yang, “Silicon Schottky retinas for infrared imaging,” IEDM Tech. Dig., 310–313 (1973). Google Scholar

  • [55] W.D. Lawson, S. Nielson, E.H. Putley, and A.S. Young, “Preparation and properties of HgTe and mixed crystals of HgTe-CdTe,” J. Phys. Chem. Solids 9, 325–329 (1959). http://dx.doi.org/10.1016/0022-3697(59)90110-6CrossrefGoogle Scholar

  • [56] T. Elliot, “Recollections of MCT work in the UK at Malvern and Southampton,” Proc. SPIE 7298, 72982M (2009). http://dx.doi.org/10.1117/12.820214Google Scholar

  • [57] P.W. Kruse, M.D. Blue, J.H. Garfunkel, and W.D. Saur, “Long wavelength photoeffects in mercury selenide, mercury telluride and mercury telluride-cadmium telluride,” Infrared Phys. 2, 53–60, 1962. http://dx.doi.org/10.1016/0020-0891(62)90043-XCrossrefGoogle Scholar

  • [58] J. Melngailis and T. C. Harman, “Single-crystal lead-tin chalcogenides,” in Semiconductors and Semimetals, Vol 5, pp. 111–174, edited by R. K. Willardson and A. C. Beer, Academic Press, New York, 1970. Google Scholar

  • [59] T.C. Harman and J. Melngailis, “Narrow gap semiconductors,” in Applied Solid State Science, Vol. 4, pp. 1–94, edited by R. Wolfe, Academic Press, New York, 1974. Google Scholar

  • [60] R. Dornhaus, G. Nimtz, and B. Schlicht, Narrow Gap Semiconductors, Springer, Berlin, 1983. Google Scholar

  • [61] J. Baars, “New aspects of the material and device technology of intrinsic infrared photodetectors,” in Physics and Narrow Gap Semiconductors, pp. 280–282, edited by E. Gornik, H. Heinrich and L. Palmetshofer, Springer, Berlin (1982). Google Scholar

  • [62] J.T. Longo, D.T. Cheung, A.M. Andrews, C.C. Wang, and J.M. Tracy, “Infrared focal planes in intrinsic semiconductors,” IEEE Trans. Electr. Dev. ED-25, 213–232 (1978). http://dx.doi.org/10.1109/T-ED.1978.19062CrossrefGoogle Scholar

  • [63] D. Long and J.L. Schmit, “Mercury-cadmium telluride and closely related alloys,” in Semiconductors and Semimetals, Vol. 5, pp. 175–255, edited by R. K. Willardson and A. C. Beer, Academic Press, New York (1970). Google Scholar

  • [64] P. Norton, “HgCdTe infrared detectors,” Opto-Electron. Rev. 10, 159–174 (2002). Google Scholar

  • [65] C. Verie and R. Granger, “Propriétés de junctions p-n d’alliages CdxHg1−xTe,” C. T. Acad. Sc. 261, 3349–3352 (1965). Google Scholar

  • [66] G.C. Verie and M. Sirieix, “Gigahertz cutoff frequency capabilities of CdHgTe photovoltaic detectors at 10.6 μm,” IEEE J. Quant. Electr. 8, 180–184 (1972). http://dx.doi.org/10.1109/JQE.1972.1076934CrossrefGoogle Scholar

  • [67] B.E. Bartlett, D.E. Charlton, W.E. Dunn, P.C. Ellen, M.D. Jenner, and M.H. Jervis, “Background limited photoconductive detectors for use in the 8–14 micron atmospheric window,” Infrared Phys. 9, 35–36 (1969). http://dx.doi.org/10.1016/0020-0891(69)90006-2CrossrefGoogle Scholar

  • [68] M.A. Kinch, S.R. Borrello, and A. Simmons, “0.1 eV HgCdTe photoconductive detector performance,” Infrared Phys. 17, 127–135 (1977). http://dx.doi.org/10.1016/0020-0891(77)90105-1Google Scholar

  • [69] M.A. Kinch, “Fifty years of HgCdTe at Texas Instruments and beyond,” Proc. SPIE 7298, 72982T (2009). Google Scholar

  • [70] C.T. Elliott, D. Day, and B.J. Wilson, “An integrating detector for serial scan thermal imaging,” Infrared Physics 22, 31–42 (1982). http://dx.doi.org/10.1016/0020-0891(82)90016-1CrossrefGoogle Scholar

  • [71] A. Blackburn, M.V. Blackman, D.E. Charlton, W.A.E. Dunn, M.D. Jenner, K.J. Oliver, and J.T.M. Wotherspoon, ”The practical realization and performance of SPRITE detectors,” Infrared Phys. 22, 57–64 (1982). http://dx.doi.org/10.1016/0020-0891(82)90019-7CrossrefGoogle Scholar

  • [72] D. L. Smith and C. Mailhiot, “Proposal for strained type II superlattice infrared detectors,” J. Appl. Phys. 62, 2545–2548 (1987). http://dx.doi.org/10.1063/1.339468CrossrefGoogle Scholar

  • [73] B.F. Levine, “Quantum-well infrared photodetectors,” J. Appl. Phys. 74, R1–R81 (1993). http://dx.doi.org/10.1063/1.354252CrossrefGoogle Scholar

  • [74] A. Rogalski, “Quantum well photoconductors in infrared detectors technology,” J. Appl. Phys. 93, 4355–4391 (2003). http://dx.doi.org/10.1063/1.1558224CrossrefGoogle Scholar

  • [75] H. Schneider and H. C. Liu, Quantum Well Infrared Photodetectors, Springer, Berlin, 2007. Google Scholar

  • [76] M. Zandian, J.D. Garnett, R.E. DeWames, M. Carmody, J.G. Pasko, M. Farris, C.A. Cabelli, D.E. Cooper, G. Hildebrandt, J. Chow, J.M. Arias, K. Vural, and D.N.B. Hall, “Mid-wavelength infrared p-on-on Hg1−xCdxTe heterostructure detectors: 30–120 Kelvin state-of-the-art performance,” J. Electron. Mater. 32, 803–809 (2003). http://dx.doi.org/10.1007/s11664-003-0074-6CrossrefGoogle Scholar

  • [77] A. Rogalski and R. Ciupa, “Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes,” J. Electron. Mater. 28, 630–636 (1999). http://dx.doi.org/10.1007/s11664-999-0046-6CrossrefGoogle Scholar

  • [78] M.Z. Tidrow, W.A. Beck, W.W. Clark, H.K. Pollehn, J.W. Little, N.K. Dhar, P.R. Leavitt, S.W. Kennerly, D.W. Beekman, A.C. Goldberg, and W.R. Dyer, “Device physics and focal plane applications of QWIP and MCT,” Opto-Electron. Rev. 7, 283–296 (1999). Google Scholar

  • [79] Y. Wei and M. Razeghi, “Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering,” Phys. Rev. B69, 085316 (2004). CrossrefGoogle Scholar

  • [80] A. Rogalski, “Hg-based alternatives to MCT,” in Infrared Detectors and Emitters: Materials and Devices, pp. 377–400, edited by P. Capper and C.T. Elliott, Kluwer Academic Publishers, Boston, 2001. http://dx.doi.org/10.1007/978-1-4615-1607-1_13CrossrefGoogle Scholar

  • [81] M.J. E. Golay, “A pneumatic infrared detector,” Rev. Sci. Instr. 18, 357–362 (1947). http://dx.doi.org/10.1063/1.1740949CrossrefGoogle Scholar

  • [82] E.M. Wormser, “Properties of thermistor infrared detectors,” J. Opt. Soc. Amer. 43, 15–21 (1953). http://dx.doi.org/10.1364/JOSA.43.000015CrossrefGoogle Scholar

  • [83] R. W. Astheimer, “Thermistor infrared detectors,” Proc. SPIE 443, 95–109 (1983). Google Scholar

  • [84] G.W. McDaniel and D.Z. Robinson, “Thermal imaging by means of the evaporograph,” Appl. Opt. 1, 311–324 (1962). http://dx.doi.org/10.1364/AO.1.000311CrossrefGoogle Scholar

  • [85] C. Hilsum and W.R. Harding, “The theory of thermal imaging, and its application to the absorption-edge image tube,” Infrared Phys. 1, 67–93 (1961). http://dx.doi.org/10.1016/0020-0891(61)90045-8CrossrefGoogle Scholar

  • [86] A.J. Goss, “The pyroelectric vidicon — A review,” Proc. SPIE 807, 25–32 (1987). Google Scholar

  • [87] R. A. Wood and N. A. Foss, “Micromachined bolometer arrays achieve low-cost imaging,” Laser Focus World, 101–106 (June, 1993). Google Scholar

  • [88] http://www.flir.com/uploadedFiles/Eurasia/Cores_and_Components/Technical_Notes/uncooled%20detectors%20BST.pdf Google Scholar

  • [89] T. Schimert, C. Hanson, J. Brady, T. Fagan, M. Taylor, W. McCardel, R. Gooch, M. Gohlke, and A.J. Syllaios, “Advances in small pixel, large format a-Si bolometer arrays,” Proc. SPIE 7298, 72980T-1–5 (2009). Google Scholar

  • [90] JJ. Yon, JP. Nieto, L. Vandroux, P. Imperinetti, E. Rolland, V. Goudon, C. Vialle, and A. Arnaud, ”Low resistance α-SiGe based microbolometer pixel for future smart IR FPA,” Proc. SPIE 7660, 76600U-1–7 (2010). Google Scholar

  • [91] C. Hanson, “IR detectors: amorphous-silicon bolometers could surpass IR focal-plane technologies,” Laser Focus Word, April 1, 2011. Google Scholar

  • [92] N. Roxhed, F. Niklaus, A.C. Fischer, F. Forsberg, L. Höglund, P. Ericsson, B. Samel, S. Wissmar, A. Elfvingc, T.I. Simonsen, K. Wang, and N. Hoivik, “Low-cost uncooled microbolometers for thermal imaging,” Proc. SPIE 7726, 772611-1–10 (2010). Google Scholar

  • [93] Seeing Photons: Progress and Limits of Visible and Infared Sensor Arrays, Committee on Developments in Detector Technologies; National Research Council, 2010, http://www.nap.edu/catalog/12896.html Google Scholar

  • [94] P. Norton, “Detector focal plane array technology”, in Encyclopedia of Optical Engineering, edited by R. Driggers, pp. 320–348, Marcel Dekker Inc., New York, 2003. Google Scholar

  • [95] R. Thom, “High density infrared detector arrays,” U.S. Patent No. 4,039,833 (1977). Google Scholar

  • [96] A.S. Gilmore, “High-definition infrared FPAs,” Raytheon Technology Today, issue 1 (2008). Google Scholar

  • [97] G. Destefanis, P. Tribolet, M. Vuillermet, and D.B. Lanfrey, “MCT IR detectors in France,” Proc. SPIE 8012, 801235-1–12 (2011) Google Scholar

  • [98] A. Hoffman, “Semiconductor processing technology improves resolution of infrared arrays,” Laser Focus World, 81–84, February 2006. Google Scholar

  • [99] J.W. Beletic, R. Blank, D. Gulbransen, D. Lee, M. Loose, E.C. Piquette, T. Sprafke, W.E. Tennant, M. Zandian, and J. Zino, “Teledyne Imaging Sensors: Infrared imaging technologies for astronomy & civil space,” Proc. SPIE 7021, 70210H (2008). http://dx.doi.org/10.1117/12.790382Google Scholar

  • [100] A.M. Fowler, D. Bass, J. Heynssens, I. Gatley, F.J. Vrba, H.D. Ables, A. Hoffman, M. Smith, and J. Woolaway, “Next generation in InSb arrays: ALADDIN, the 1024×1024 InSb focal plane array readout evaluation results,” Proc. SPIE 2268, 340–345 (1994). http://dx.doi.org/10.1117/12.185844CrossrefGoogle Scholar

  • [101] E. Beuville, D. Acton, E. Corrales, J. Drab, A. Levy, M. Merrill, R. Peralta, and W. Ritchie, “High performance large infrared and visible astronomy arrays for low background applications: Instruments performance data and future developments at Raytheon,” Proc. SPIE 6660, 66600B (2007). http://dx.doi.org/10.1117/12.734846Google Scholar

  • [102] A.W. Hoffman, E. Corrales, P.J. Love, and J. Rosbeck, M. Merrill, A. Fowler, and C. McMurtry, “2K×2K InSb for astronomy,” Proc. SPIE 5499, 59–67 (2004). http://dx.doi.org/10.1117/12.555200CrossrefGoogle Scholar

  • [103] M.E. Ressler, H. Cho, R.A.M. Lee, K.G. Sukhatme, J.J. Drab, G. Domingo, M.E. McKelvey, R.E. McMurray, Jr., and J.L. Dotson, “Performance of the JWST/MIRI Si:As detectors,” Proc. SPIE 7021, 70210O (2008). http://dx.doi.org/10.1117/12.789606Google Scholar

  • [104] A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays,” J. Appl. Phys. 105, 091101 (2009). http://dx.doi.org/10.1063/1.3099572CrossrefGoogle Scholar

  • [105] D.F. King, J.S. Graham, A.M. Kennedy, R.N. Mullins, J.C. McQuitty, W.A. Radford, T.J. Kostrzewa, E.A. Patten, T.F. Mc Ewan, J.G. Vodicka, and J.J. Wootana, “3rd-generation MW/LWIR sensor engine for advanced tactical systems,” Proc. 6940, 69402R (2008). Google Scholar

  • [106] S. Gunapala, S.V. Bandara, J.K. Liu, J.M. Mumolo, D.Z. Ting, C.J. Hill, J. Nguyen, B. Simolon, J. Woolaway, S.C. Wang, W. Li, P.D. LeVan, and M.Z. Tidrow, “Demonstration of megapixel dual-band QWIP focal plane array,” IEEE J. Quantum. Electron. 46, 285–293 (2010). http://dx.doi.org/10.1109/JQE.2009.2024550CrossrefGoogle Scholar

  • [107] S.D. Gunapala, S.V. Bandara, J.K. Liu, E.M. Luong, S.B. Rafol, J.M. Mumolo, D.Z. Ting, J.J. Bock, M.E. Ressler, M.W. Werner, P.D. LeVan, R. Chehayeb, C.A. Kukkonen, M. Ley, P. LeVan, and M.A. Fauci, “Recent developments and applications of quantum well infrared photodetector focal plane arrays,” Opto-Electron. Rev. 8, 150–163 (2001). Google Scholar

  • [108] A. Rogalski, “New material systems for third generation infrared photodetectors,” Opto-Electron. Rev. 16, 458–482 (2008). http://dx.doi.org/10.2478/s11772-008-0047-7CrossrefGoogle Scholar

  • [109] R. Rehm, M. Walther, J. Schmitz, F. Rutz, A. Worl, R. Scheibner, and J. Ziegler, “Type-II superlattices: the Fraunhofer perspective,” Proc. SPIE 7660, 76601G-1–12 (2010). Google Scholar

  • [110] “Uncooled infrared imaging market commercial & military applications,” Market & Technology Report — available in JULY 2011, Yole Development. Google Scholar

  • [111] http://www.sofradir-ec.com/wp-uncooled-detectors-achieve.asp Google Scholar

  • [112] S.H. Black, T. Sessler, E. Gordon, R. Kraft, T Kocian, M. Lamb, R. Williams, and T. Yang, “Uncooled detector development at Raytheon,” Proc. SPIE 8012, 80121A-1–12 (2011). Google Scholar

  • [113] P. Martyniuk and A. Rogalski, “Quantum-dot infrared photodetectors: Status and outlook,” Prog. Quantum Electron. 32, 89–120 (2008). http://dx.doi.org/10.1016/j.pquantelec.2008.07.001CrossrefGoogle Scholar

About the article

Published Online: 2012-07-04

Published in Print: 2012-09-01


Citation Information: Opto-Electronics Review, Volume 20, Issue 3, Pages 279–308, ISSN (Online) 1896-3757, DOI: https://doi.org/10.2478/s11772-012-0037-7.

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© 2012 SEP, Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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