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Opto-Electronics Review

Editor-in-Chief: Jaroszewicz, Leszek

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Volume 21, Issue 2 (Jun 2013)


Thermal management of GaInNAs/GaAs VECSELs

A. Sokół
  • Institute of Physics, Lodz University of Technology, 219 Wólczańska Str., 90-924, Łódź, Poland
  • Email:
/ R. Sarzała
  • Institute of Physics, Lodz University of Technology, 219 Wólczańska Str., 90-924, Łódź, Poland
  • Email:
Published Online: 2013-03-15 | DOI: https://doi.org/10.2478/s11772-013-0081-y


Different methods used to reduce temperature increase within the active region of vertical-external-cavity surface-emitting lasers (VECSELs) are described and compared with the aid of the self-consistent thermal finite-element method. Simulations have been carried out for the GaInNAs/GaAs multiple-quantum-well (MQW) VECSEL operating at room temperature at 1.31 μm. Main results are presented in form of ‘thermal maps’ which can be simply used to determine maximal temperature of different structures at specified pumping conditions. It has been found that these maps are also appropriate for some other GaAs-based VECSELs and can be very helpful especially during structure designing. Moreover, convective and thermal radiation heat transfer from laser walls has been investigated.

Keywords: thermal management; VECSEL; semiconductor disk laser; SDL; GaInNAs; InGaAs

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About the article

Published Online: 2013-03-15

Published in Print: 2013-06-01

Citation Information: Opto-Electronics Review, ISSN (Online) 1896-3757, DOI: https://doi.org/10.2478/s11772-013-0081-y. Export Citation

© 2013 SEP, Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. (CC BY-NC-ND 3.0)

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