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Opto-Electronics Review

Editor-in-Chief: Jaroszewicz, Leszek

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Volume 21, Issue 2

Issues

Electrical properties of HgCdTe films grown by MOCVD and doped with as

I. Izhnin / H. Savytskyy / O. Fitsych / J. Piotrowski / K. Mynbaev
Published Online: 2013-03-15 | DOI: https://doi.org/10.2478/s11772-013-0086-6

Abstract

Electrical properties of HgCdTe films grown by metal-organic chemical vapour deposition (MOCVD) on GaAs substrates and doped with the As acceptor during the growth were studied. Discrete mobility spectrum analysis was used to extract the parameters of the as-grown films and films after ion milling and during prolonged relaxation of milling-induced defects. The measurements revealed significant compensation of the as-grown MOCVD HgCdTe with As on Te sites being the main defect, residual donor concentration of the order of (2–5)×1015 cm−3, and the presence of some unidentified defects.

Keywords: MOCVD; HgCdTe; As doping; electrical properties

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About the article

Published Online: 2013-03-15

Published in Print: 2013-06-01


Citation Information: Opto-Electronics Review, Volume 21, Issue 2, Pages 220–226, ISSN (Online) 1896-3757, DOI: https://doi.org/10.2478/s11772-013-0086-6.

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© 2013 SEP, Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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