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Opto-Electronics Review

Editor-in-Chief: Jaroszewicz, Leszek

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Volume 22, Issue 2

Issues

Barrier infrared detectors

P. Martyniuk / M. Kopytko / A. Rogalski
Published Online: 2014-03-29 | DOI: https://doi.org/10.2478/s11772-014-0187-x

Abstract

In 1959, Lawson and co-workers publication triggered development of variable band gap Hg1−xCdxTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. Over the five decades, this material system has successfully fought off major challenges from different material systems, but despite that it has more competitors today than ever before. It is interesting however, that none of these competitors can compete in terms of fundamental properties. They may promise to be more manufacturable, but never to provide higher performance or, with the exception of thermal detectors, to operate at higher temperatures.

In the last two decades a several new concepts of photodetectors to improve their performance have been proposed including trapping detectors, barrier detectors, unipolar barrier photodiodes, and multistage detectors. This paper describes the present status of infrared barrier detectors. It is especially addressed to the group of III-V compounds including type-II superlattice materials, although HgCdTe barrier detectors are also included. It seems to be clear that certain of these solutions have merged as a real competitions of HgCdTe photodetectors.

Keywords: HgCdTe photodetectors; barrier detectors; type-II InAs/GaSb superlattice photodetectors; Sb-based III-V photodetectors

  • [1] A. Rogalski, Infrared Detectors, 2nd edition, CRC Press, Boca Raton, 2010. Google Scholar

  • [2] A. White, “Infrared detectors”, U.S. Patent 4,679,063, 1983. Google Scholar

  • [3] P.C. Klipstein, “Depletionless photodiode with suppressed dark current and method for producing the same”, U.S. Patent 7,795,640, 2003. Google Scholar

  • [4] S. Maimon and G. Wicks, “nBn detector, an infrared detector with reduced dark current and higher operating temperature”, Appl. Phys. Lett. 89, 151109–1-3 (2006). http://dx.doi.org/10.1063/1.2360235CrossrefGoogle Scholar

  • [5] D.Z.-Y. Ting, A. Soibel, L. Höglund, J. Nguyen, C.J. Hill, A. Khoshakhlagh, and S.D. Gunapala, “Type-II superlattice infrared detectors”, in Semiconductors and Semimetals, Vol. 84, pp. 1–57, edited by S.D. Gunapala, D.R. Rhiger, and C. Jagadish, Elsevier, Amsterdam, 2011. http://dx.doi.org/10.1016/B978-0-12-381337-4.00001-2CrossrefGoogle Scholar

  • [6] J.B. Rodriguez, E. Plis, G. Bishop, Y.D. Sharma, H. Kim, L.R. Dawson, and S. Krishna, “nBn structure based on InAs/GaSb type-II strained layer superlattices”, Appl. Phys. Lett. 91, 043514–1-2 (2007). http://dx.doi.org/10.1063/1.2760153CrossrefGoogle Scholar

  • [7] G.R. Savich, J.R. Pedrazzani, D.E. Sidor, and G.W. Wicks, “Benefits and limitations of unipolar barriers in infrared photodetectors”, Infrared Physics & Technol. 59, 152–155 (2013). http://dx.doi.org/10.1016/j.infrared.2012.12.031CrossrefGoogle Scholar

  • [8] P. Klipstein, “XBn barrier photodetectors for high sensitivity operating temperature infrared sensors” Proc. SPIE. 6940, 69402U-1–11 (2008). http://dx.doi.org/10.1117/12.783931Google Scholar

  • [9] D.Z. Ting, C.J. Hill, A. Soibel, J. Nguyen, S.A. Keo, M.C. Lee, J.M. Mumolo, J.K. Liu, and S.D. Gunapala, “Antimonide-based barrier infrared detectors”, Proc. SPIE 7660, 76601R-1–12 (2010). http://dx.doi.org/10.1117/12.850859Google Scholar

  • [10] P. Klipstein, O. Klin, S. Grossman, N. Snapi, I. Lukomsky, D. Aronov, M. Yassen, A. Glozman, T. Fishman, E. Ber- kowicz, O. Magen, I. Shtrichman, and E. Weiss, “XBn barrier photodetectors based on InAsSb with high operating temperatures” Opt. Eng. 50, 061002-1–10 (2011). http://dx.doi.org/10.1117/1.3572149CrossrefGoogle Scholar

  • [11] G.R. Savich, J.R. Pedrazzani, D.E. Sidor, S. Maimon, and G.W. Wicks, “Use of unipolar barriers to block dark currents in infrared detectors” Proc. SPIE 8012, 8022T (2012). Google Scholar

  • [12] P. Martyniuk and A. Rogalski, “HOT infrared photodetectors”, Opto-Electron. Rev. 21, 240–258 (2013). http://dx.doi.org/10.2478/s11772-013-0090-xCrossrefGoogle Scholar

  • [13] P. Klipstein, D. Aronov, E. Berkowicz, R. Fraenkel, A. Glozman, S. Grossman, O. Klin, I. Lukomsky, I. Shtrichman, N. Snapi, M. Yassem, and E. Weiss, “Reducing the cooling requirements of mid-wave IR detector arrys”, SPIE Newsroom 10.1117/2.1201111.003919, 2011. Google Scholar

  • [14] M. Razeghi, S.P. Abdollahi, E.K. Huang, G. Chen, A. Haddadi, and B.M. Nquyen, “Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures”, Opto-Electr. Rev. 19, 261–269 (2011). http://dx.doi.org/10.2478/s11772-011-0028-0CrossrefGoogle Scholar

  • [15] M. Razeghi, “Type II superlattice enables high operating temperature,” SPIE Newsroom, 10.1117/2.1201110.003870 (2011). Google Scholar

  • [16] G.R. Savich, J.R. Pedrazzani, D.E. Sidor, S. Maimon, and G.W. Wicks, “Dark current filtering in unipolar barrier infrared detectors”, Appl. Phys. Lett. 99, 121112 (2011). http://dx.doi.org/10.1063/1.3643515CrossrefGoogle Scholar

  • [17] P.C. Klipstein, Y. Gross, A. Aronov, M. ben Ezra, E. Berkowicz, Y. Cohen, R. Fraenkel, A. Glozman, S. Grossman, O. Kin, I. Lukomsky, T. Markowitz, L. Shkedy, I. Sntrichman, N. Snapi, A. Tuito, M. Yassen, and E. Weiss, “Low SWaP MWIR detector based on XBn focal plane array” Proc. SPIE 8704, id. 87041S-1–12 (2013). http://dx.doi.org/10.1117/12.2016681Google Scholar

  • [18] A. Khoshakhlagh, S. Myers, E. Plis, M.N. Kutty, B. Klein, N. Gautam, H. Kim, E.P.G. Smith, D. Rhiger, S.M. Johnson, and S. Krishna, “Mid-wavelength InAsSb detectors based on nBn design”, Proc. SPIE 7660, 76602Z (2010). http://dx.doi.org/10.1117/12.850428Google Scholar

  • [19] A.M. Itsuno, J.D. Philips, and S. Velicu, “Design and modelling of HgCdTe nBn detectors”, J. Elect. Mater. 40, 1624–1629 (2011). http://dx.doi.org/10.1007/s11664-011-1614-0CrossrefGoogle Scholar

  • [20] M. Kopytko, A. KębŁowski, W. Gawron, P. Madejczyk, A. Kowalewski, and K. Jźówikowski, “High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD”, Opto-Electr. Rev. 21.42, 402–405 (2013). http://dx.doi.org/10.2478/s11772-013-0101-yCrossrefGoogle Scholar

  • [21] J.F. Klem, J.K. Kim, M.J. Cich, S.D. Hawkins, T.R. Fortune, and J.L. Rienstra, “Comparison of nBn and nBp mid-wave barrier infrared photodetectors”, Proc. SPIE 7608, 76081P (2010). http://dx.doi.org/10.1117/12.842772Google Scholar

  • [22] H. Kroemer, “The 6.1 Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review”, Physica E20, 196–203 (2004). http://dx.doi.org/10.1016/j.physe.2003.08.003CrossrefGoogle Scholar

  • [23] H. Sakaki, L.L. Chang, R. Ludeke, C.A. Chang, G.A. Sai—Halasz, and L. Esaki, “In1−xGaxAs-GaSb1−yAsy heterojunctions by molecular beam epitaxy”, Appl. Phys. Lett. 31, 211–213 (1977). http://dx.doi.org/10.1063/1.89609Google Scholar

  • [24] Y. Wei and M. Razeghi, “Modelling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering”, Phys. Rev. B69, 085316–7 (2004). http://dx.doi.org/10.1103/PhysRevB.69.085316CrossrefGoogle Scholar

  • [25] G.A. Umana-Membreno, B. Klein, H. Kala, J. Antoszewski, N. Gautam, M.N. Kutty, E. Plis, S. Krishna, and L. Faraone, “Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices”, Appl Phys. Lett. 101, 253515 (2012). http://dx.doi.org/10.1063/1.4772954CrossrefGoogle Scholar

  • [26] D. Zuo, P. Qiao, D. Wasserman, and S.L. Chuang, “Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control”, Appl. Phys. Lett. 102, 141107 (2013). http://dx.doi.org/10.1063/1.4801764CrossrefGoogle Scholar

  • [27] E. Weiss, O. Klin, S. Grossmann, N. Snapi, I. Lukomsky, D. Aronov, M. Yassen, E. Berkowicz, A. Glozman, P. Klipstein, A. Fraenkel, and I. Shtrichman, “InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs”, J. Crystal Growth 339, 31–35 (2012). http://dx.doi.org/10.1016/j.jcrysgro.2011.11.076CrossrefGoogle Scholar

  • [28] P. Martyniuk and A. Rogalski, “Modelling of InAsSb/AlAsSb nBn HOT detector’s performance limits”, Proc. SPIE 8704, 87041X (2013). http://dx.doi.org/10.1117/12.2017721Google Scholar

  • [29] A.I. D’Souza, E. Robinson, A.C. Ionescu, D. Okerlund, T.J. de Lyon, R.D. Rajavel, H. Sharifi, N.K. Dhar, P.S. Wijewarnasuriya, and C. Grein, “5MWIR InAsSb barrier detector data and analysis”, Proc. SPIE 8704, 87041U (2013). http://dx.doi.org/10.1117/12.2018427Google Scholar

  • [30] E.H. Aifer, J.G. Tischler, J. H. Warner, I. Vurgaftman, W.W. Bewley, J.R. Meyer, J.C. Kim, and L.J. Whitman, “W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency”, Appl. Phys. Lett. 89, 053519 (2006). http://dx.doi.org/10.1063/1.2335509CrossrefGoogle Scholar

  • [31] B.-M. Nguyen, M. Razeghi, V. Nathan, and G.J. Brown, “Type-II “M” structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes”, Proc. SPIE 6479, 64790S (2007). http://dx.doi.org/10.1117/12.711588Google Scholar

  • [32] B.-M. Nguyen, D. Hoffman, P.-Y. Delaunay, and M. Razeghi, “Dark current suppression in type II InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure”, Appl. Phys. Lett. 163511 (2007). CrossrefGoogle Scholar

  • [33] B.-M. Nguyen, D. Hoffman, P.-Y. Delaunay, E.K. Huang, M. Razeghi, and J. Pellegrino, “Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes”, Appl. Phys. Lett. 93, 163502 (2008). http://dx.doi.org/10.1063/1.3005196CrossrefGoogle Scholar

  • [34] M. Razeghi, H. Haddadi, A.M. Hoang, E.K. Huang, G. Chen, S. Bogdanov, S.R. Darvish, F. Callewaert, and R. McClintock, “Advances in antimonide-based Type-II superlattices for infrared detection and imaging at centre for quantum devices”, Infrared Phys. & Technol. 59, 41–52 (2013). http://dx.doi.org/10.1016/j.infrared.2012.12.008CrossrefGoogle Scholar

  • [35] O. Salihoglu, A. Muti, K. Kutluer, T. Tansel, R. Turan, Y. Ergun, and A. Aydinli, “«N» structure for type-II superlattice photodetectors”, Appl. Phys. Lett. 101, 073505 (2012). http://dx.doi.org/10.1063/1.4745841CrossrefGoogle Scholar

  • [36] J.L. Johnson, L.A. Samoska, A.C. Gossard, J.L. Merz, M.D. Jack, G.H. Chapman, B.A. Baumgratz, K. Kosai, and S.M. Johnson, “Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb”, J. Appl. Phys. 80, 1116–1127 (1996). http://dx.doi.org/10.1063/1.362849Google Scholar

  • [37] A. Khoshakhlagh J.B. Rodriguez, E. Plis, G.D. Bishop, Y.D. Sharma, H.S. Kim, L.R. Dawson and S. Krishna, “Bias dependent dual band response from InAs/Ga(In)Sb type II strain layer superlattice detectors”, Appl. Phys. Lett. 91, 263504 (2007). http://dx.doi.org/10.1063/1.2824819CrossrefGoogle Scholar

  • [38] I. Vurgaftman, E.H. Aifer, C.L. Canedy, J.G. Tischler, J.R. Meyer, and J.H. Warner, “Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes”, Appl. Phys. Lett. 89, 121114 (2006) http://dx.doi.org/10.1063/1.2356697CrossrefGoogle Scholar

  • [39] E.H. Aifer, J.H. Warner, C.L. Canedy, I. Vurgaftman, E.M. Jackson, J.G. Tischler, J.R. Meyer, S.P. Powell, K. Olver, and W.E. Tennant, “Shallow-etch mesa isolation of graded- -bandgap“W”-structured type II superlattice photodiodes”, J. Electron. Mater. 39, 1070–1079 (2010). http://dx.doi.org/10.1007/s11664-009-1056-0CrossrefGoogle Scholar

  • [40] D.Z.-Y. Ting, C.J. Hill, A. Soibel, S.A. Keo, J.M. Mumolo, J. Nguyen, and S.D. Gunapala, “A high-performance long wavelength superlattice complementary barrier infrared detector”, Appl. Phys. Lett. 95, 023508 (2009). http://dx.doi.org/10.1063/1.3177333CrossrefGoogle Scholar

  • [41] E.A. DeCuir, G.P. Meissner, P.S. Wijewarnasuriya, N. Gautam, S. Krishna, N.K. Dhar, R.E. Welser, and A.K. Sood, “Long-wave type-II superlattice detectors with unipolar electron and hole barriers”, Opt. Eng. 51, 124001 (2012). http://dx.doi.org/10.1117/1.OE.51.12.124001CrossrefGoogle Scholar

  • [42] N. Gautam, S. Myers, A.V. Barve, B. Klein, E.P. Smith, D. Rhiger, E. Plis, M.N. Kutty, N. Henry, T. Schuler-Sandyy, and S. Krishna, “Band engineering HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices”, Infrared Physics & Techol. 59, 72–77 (2013). http://dx.doi.org/10.1016/j.infrared.2012.12.017CrossrefGoogle Scholar

  • [43] E. Plis, H.S. Kim, G. Bishop, S. Krishna, K. Banerjee, and S. Ghosh, “Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors”, Appl. Phys. Lett. 93, 123507 (2008). http://dx.doi.org/10.1063/1.2990049CrossrefGoogle Scholar

  • [44] A.D. Hood, A.J. Evans, A. Ikhlassi, D.L. Lee, and W.E. Tennant, “LWIR strained-layer superlattice materials and devices at Teledyne Imaging Sensors”, J. Electron. Mater. 39, 1001–1006 (2010). http://dx.doi.org/10.1007/s11664-010-1091-xCrossrefGoogle Scholar

  • [45] W.E. Tennant, D. Lee, M. Zandian, E. Piquette, and M. Carmody, “MBE HgCdTe Technology: A very general solution to IR detection, described by ‘Rule 07’, a very convenient heuristic”, J. Electron. Mater. 37, 1406 (2008). http://dx.doi.org/10.1007/s11664-008-0426-3CrossrefGoogle Scholar

  • [46] D.R. Rhiger, “Performance comparison of long-wavelength infrared type II superlattice devices with HgCdTe”, J. Electron. Mater. 40, 1815–1822 (2011). http://dx.doi.org/10.1007/s11664-011-1653-6CrossrefGoogle Scholar

  • [47] A.M. Itsuno, J.D. Phillips, and S. Velicu, “Mid-wave infrared HgCdTe nBn photodetector”, Appl. Phys. Lett. 100, 161102 (2012). http://dx.doi.org/10.1063/1.4704359CrossrefGoogle Scholar

  • [48] A.M. Itsuno, J.D. Phillips, and S. Velicu, “Design of an Auger-suppressed unipolar HgCdTe NBnN photodetector”, J. Electron. Mater. 41, 2886–2892 (2012). http://dx.doi.org/10.1007/s11664-012-1992-yCrossrefGoogle Scholar

  • [49] S. Velicu, J. Zhao, M. Morley, A.M. Itsuno, and J.D. Philips, “Theoretical and experimental investigation of MWIR HgCdTe nBn detectors”, Proc. SPIE 8268, 82682X-1–13 (2012). Google Scholar

  • [50] M. Kopytko, A. KębŁowski, W. Gawron, P. Madejczyk, A. Kowalewski, and K. Jźówikowski, “High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD”, Opto-Electr. Rev. 21, 402–405 (2013). http://dx.doi.org/10.2478/s11772-013-0101-yCrossrefGoogle Scholar

  • [51] P. Maryniuk and A. Rogalski, “Modelling of MWIR HgCdTe complementary barrier HOT”, Solid-State Electronics 80, 96–104 (2013). http://dx.doi.org/10.1016/j.sse.2012.10.021CrossrefGoogle Scholar

  • [52] E.F. Schubert, L.W. Tu. G.J. Zydzik, R.F. Kopf, A. Benvenuti and M.R. Pinto, “Elimination of heterojunction band discontinuities by modulation doping”, Appl. Phys. Lett. 60, 466–468 (1992). http://dx.doi.org/10.1063/1.106636CrossrefGoogle Scholar

  • [53] S.D. Gunpala, D.Z Ting, C.J. Hill, and S.V. Bandara, U.S. Patent No. 7,737,411, 2010. Google Scholar

  • [54] N.D. Akhavan, G. Jolley, G. Umana-Membreno, J. Antoszewski, and L. Faraone, “Performance modelling of bandgap engineered HgCdTe-based nBn infrared detectors”, Extended Abstracts, The 2013 Workshop on the Physics and Chemistry of II-VI Materials, Chicago (2013). Google Scholar

  • [55] M. Kopytko, A. Kębłowski, W. Gawron, A. Kowalewski, “MOCVD grown HgCdTe barrier structures for high-operating temperature MWIR photodetectors”, to be published. Google Scholar

  • [56] L. Zheng, M. Tidrow, L. Aitcheson, J. O’Connor, and S. Brown, “Developing high-performance III-V superlattice IRFPAs for defense — challenges and solutions”, Proc. SPIE 7660, 7660-1–12 (2010). http://dx.doi.org/10.1117/12.852239CrossrefGoogle Scholar

  • [57] C.J. Hill, A. Soibel, S.A. Keo, J.M. Mumolo, D.Z. Ting, S.D. Gunapala, D.R. Rhiger, R.E. Kvaas, and S.F. Harris, “Demonstration of mid and long-wavelength infrared antimonide-based focal plane arrays”, Proc. SPIE 7298, 7294–04 (2009). Google Scholar

  • [58] S.D. Gunapala, D.Z. Ting, C.J. Hill, J. Nguyen, A. Soibel, S.B. Rafol, S.A. Keo, J.M. Mumolo, M.C. Lee, J.K. Liu, and B. Yang, “Demonstration of a 1024×1024 pixel InAs-GaSb superlattice focal plane array”, Phot. Tech. Lett. 22, 1856–1858 (2010). http://dx.doi.org/10.1109/LPT.2010.2089677CrossrefGoogle Scholar

  • [59] P. Manurkar, S. Ramezani-Darvish, B.-M. Nguyen, M. Razeghi, and J. Hubbs, “High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices”, Appl. Phys. Lett. 97, 193505-1–3 (2010). http://dx.doi.org/10.1063/1.3514244CrossrefGoogle Scholar

  • [60] A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays”, J. Appl. Phys. 105, 091101 (2009). http://dx.doi.org/10.1063/1.3099572CrossrefGoogle Scholar

  • [61] A.M. Hoang, G. Chen, A. Haddadi, and M. Razeghi, “Demnstration of high performance bias-selectable dual-band short- -/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices”, Appl. Phys. Lett. 102, 011108 (2013). http://dx.doi.org/10.1063/1.4773593CrossrefGoogle Scholar

  • [62] M. Razeghi, A.M. Hoang, A. Haddadi, G. Chen, S. Ramezani-Darvish, P. Bijjam, P. Wijewarnasuriya, and E. Decuir, “High-performance bias-selectable dual-band short-/Mid- -wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb type-II superlattices”, Proc. SPIE 8704, 8704–54 (2013). Google Scholar

  • [63] M. Razeghi, A. Haddadi, A.M. Hoang, G. Chen, S. Ramezani-Darvish, and P. Bijjam, “High-performance bias-selectable dual-band mid-/long-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb type-II superlattices”, Proc. SPIE 8704, 87040S (2013). http://dx.doi.org/10.1117/12.2019147Google Scholar

  • [64] M.A. Kinch, H.F. Schaake, R.L. Strong, P.K. Liao, M.J. Ohlson, J. Jacques, C-F Wan, D. Chandra, R.D. Burford, and C.A. Schaake, “High operating temperature MWIR detectors”, Proc. SPIE 7660, 76602V–1 (2010). http://dx.doi.org/10.1117/12.850965CrossrefGoogle Scholar

  • [65] W.W. Bewley, J.R. Lindle, C.S. Kim, M. Kim, C.L. Canedy, I. Vurgaftman, and J.R. Meyer, “Lifetime and Auger coefficients in type-II W interband cascade lasers”, Appl. Phys. Lett. 93, 041118 (2008). http://dx.doi.org/10.1063/1.2967730CrossrefGoogle Scholar

  • [66] M.A. Kinch, Fundamentals of Infrared Detector Materials, SPIE Press, Bellingham, 2007. http://dx.doi.org/10.1117/3.741688CrossrefGoogle Scholar

  • [67] M.A. Kinch, ”The challenges of background limited room temperature photon detection”, The 2013 U.S. Workshop on the Physics and Chemistry of II-VI Materials, Tutorial Session, Chicago, 2013. Google Scholar

  • [68] J. Wróbel, P. Martyniuk, E. Plis, P. Madejczyk, W. Gawron, S. Krishna, and A. Rogalski, “Dark current modeling of MWIR type-II superlattice detectors”, Proc. SPIE 8353, 8353–16 (2012). Google Scholar

  • [69] http://www.vigo.com.pl/ Google Scholar

About the article

Published Online: 2014-03-29

Published in Print: 2014-06-01


Citation Information: Opto-Electronics Review, Volume 22, Issue 2, Pages 127–146, ISSN (Online) 1896-3757, DOI: https://doi.org/10.2478/s11772-014-0187-x.

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