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Opto-Electronics Review

Editor-in-Chief: Jaroszewicz, Leszek

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1896-3757
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Volume 22, Issue 3

Issues

Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices

K. Lozovoy / A. Voytsekhovskiy / A. Kokhanenko / V. Satdarov / O. Pchelyakov
  • National Research Tomsk State University, 36 Lenin Ave., 634050, Tomsk, Russia
  • Institute of Semiconductor Physics, 13 Ac. Lavrientiev Ave., 630090, Novosibirsk, Russia
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/ A. Nikiforov
  • National Research Tomsk State University, 36 Lenin Ave., 634050, Tomsk, Russia
  • Institute of Semiconductor Physics, 13 Ac. Lavrientiev Ave., 630090, Novosibirsk, Russia
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Published Online: 2014-06-29 | DOI: https://doi.org/10.2478/s11772-014-0189-8

Abstract

In this paper an analysis of tendencies of Ge on Si quantum dots nanoheterostructures’ usage in different optoelectronic devices such as, for example, solar cells and photodetectors of visible and infra-red regions is carried out; a complex mathematical model for calculation of dependency on growth conditions of self-organized quantum dots of Ge on Si grown using the method of molecular beam epitaxy parameters is described. Ways of segregation effect and underlying layers’ influence are considered. It is shown that for realization of good device characteristics quantum dots should have high density, small sizes, uniformity, and narrow size distribution function. The desirable parameters of arrays of square and rectangular quantum dots for device application are attainable under certain growth conditions.

Keywords: Hut-clusters; segregation; multi-layer structures; photodetectors; molecular beam epitaxy

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About the article

Published Online: 2014-06-29

Published in Print: 2014-09-01


Citation Information: Opto-Electronics Review, Volume 22, Issue 3, Pages 171–177, ISSN (Online) 1896-3757, DOI: https://doi.org/10.2478/s11772-014-0189-8.

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© 2014 SEP, Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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