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Opto-Electronics Review

Editor-in-Chief: Jaroszewicz, Leszek

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1896-3757
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Volume 23, Issue 3 (Sep 2015)

Issues

AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

N. Dyakonova
  • Corresponding author
  • Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS−Univ., Montpellier 2, pl. Eugene Bataillon, 34095, Montpellier, France
  • Email:
/ D.B. But
  • Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS−Univ., Montpellier 2, pl. Eugene Bataillon, 34095, Montpellier, France
/ D. Coquillat
  • Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS−Univ., Montpellier 2, pl. Eugene Bataillon, 34095, Montpellier, France
/ W. Knap
  • Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS−Univ., Montpellier 2, pl. Eugene Bataillon, 34095, Montpellier, France
/ C. Drexler
  • Terahertz Centre, University of Regensburg, Universitätsstr. 31, D−93053 Regensburg, Germany
/ P. Olbrich
  • Terahertz Centre, University of Regensburg, Universitätsstr. 31, D−93053 Regensburg, Germany
/ J. Karch
  • Terahertz Centre, University of Regensburg, Universitätsstr. 31, D−93053 Regensburg, Germany
/ M. Schafberger
  • Terahertz Centre, University of Regensburg, Universitätsstr. 31, D−93053 Regensburg, Germany
/ S.D. Ganichev
  • Terahertz Centre, University of Regensburg, Universitätsstr. 31, D−93053 Regensburg, Germany
/ G. Ducournau
  • Institut d’Electronique et de Microélectronique du Nord, UMR CNRS 8520, Cité Scientifique, Avenue Poincaré, CS 60069, 59652 Villeneuve d’Ascq, France
/ C. Gaquiere
  • Institut d’Electronique et de Microélectronique du Nord, UMR CNRS 8520, Cité Scientifique, Avenue Poincaré, CS 60069, 59652 Villeneuve d’Ascq, France
/ M.−A. Poisson
  • ThaléS, Thales Research and Technology, Domaine de Corbeville, 91404 Orsay, France
/ S. Delage
  • ThaléS, Thales Research and Technology, Domaine de Corbeville, 91404 Orsay, France
/ G. Cywinski
  • Institut of High Pressure Physics, PAS, Unipress, ul. Sokolowska 29/37, 01–142 Warsaw, Poland
/ C. Skierbiszewski
  • Institut of High Pressure Physics, PAS, Unipress, ul. Sokolowska 29/37, 01–142 Warsaw, Poland
Published Online: 2015-07-14 | DOI: https://doi.org/10.1515/oere-2015-0026

Abstract

We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm2. The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.

Keywords : terahertz; photoresponse; HEMT; ALGaN/GaN.

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About the article

Published Online: 2015-07-14

Published in Print: 2015-09-01


Citation Information: Opto-Electronics Review, ISSN (Online) 1896-3757, ISSN (Print) 1230-3402, DOI: https://doi.org/10.1515/oere-2015-0026.

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