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Opto-Electronics Review

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Volume 23, Issue 4


Synthesis and characterization of YAG:Ce phosphors for white LEDs

V. Tucureanu
  • Corresponding author
  • National Institute for Research and Development in Microtechnologies, IMT Bucharest 126A Erou Iancu Nicolae Str., code 077190 Bucharest, Romania
  • Email
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
/ A. Matei
  • National Institute for Research and Development in Microtechnologies, IMT Bucharest 126A Erou Iancu Nicolae Str., code 077190 Bucharest, Romania
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
/ A.M. Avram
  • National Institute for Research and Development in Microtechnologies, IMT Bucharest 126A Erou Iancu Nicolae Str., code 077190 Bucharest, Romania
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
Published Online: 2015-10-07 | DOI: https://doi.org/10.1515/oere-2015-0038


Worldwide commercial interest in the production of cerium doped yttrium aluminium garnet (YAG:Ce) phosphors is reflected in the widespread use of white light emitting devices. Despite of the fact that YAG:Ce is considered a “cool phosphor” it is the most important in white LED technology. This article reviews the developed techniques for producing phosphors with superior photoluminescence efficiency, including solid-state reaction, sol-gel and (co)precipitation methods. Also, by co-doping with rare earth elements, a red/blue shift is reached in the spectrum. The characteristics of YAG:Ce phosphors are investigated because the properties of the phosphors are strongly influenced by the synthesis routes and the sintering temperature treatment. After the phase analysis, morphology and emission studies of the phosphors there may be seen the conditions when the transition from the amorphous phase to the crystalline phase appears, when luminescent properties are influenced by the crystalline form, purity, average size of the particles, co-doping and so on.

Keywords: YAG:Ce; phosphor; solid-state; sol-gel; (co)precipitation


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About the article

Published Online: 2015-10-07

Published in Print: 2015-12-01

Citation Information: Opto-Electronics Review, Volume 23, Issue 4, Pages 239–251, ISSN (Online) 1896-3757, ISSN (Print) 1230-3402, DOI: https://doi.org/10.1515/oere-2015-0038.

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