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Pure and Applied Chemistry

The Scientific Journal of IUPAC

Ed. by Burrows, Hugh / Stohner, Jürgen

IMPACT FACTOR 2017: 5.294

CiteScore 2017: 3.42

SCImago Journal Rank (SJR) 2017: 1.212
Source Normalized Impact per Paper (SNIP) 2017: 1.546

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Volume 74, Issue 3


Ion-induced damage and annealing of silicon. Molecular dynamics simulations

David Humbird / David B. Graves
Published Online: 2009-01-01 | DOI: https://doi.org/10.1351/pac200274030419

A study of the interactions of energetic argon ions with silicon surfaces using molecular dynamics simulations is reported. A dynamic balance between ion-induced damage and recrystallization of the surface is detected. By manipulating ion energy, argon ions are able to both create disordered regions near the surface, and recrystallize these disordered regions.


International Symposium on Plasma Chemistry, International Symposium on Plasma Chemistry, ISPC, Plasma Chemistry, 15th, Orléans, France, 2001-07-09–2001-07-13

About the article

Published Online: 2009-01-01

Published in Print: 2002-01-01

Citation Information: Pure and Applied Chemistry, Volume 74, Issue 3, Pages 419–422, ISSN (Online) 1365-3075, ISSN (Print) 0033-4545, DOI: https://doi.org/10.1351/pac200274030419.

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