Pure and Applied Chemistry
The Scientific Journal of IUPAC
Ed. by Burrows, Hugh / Stohner, Jürgen
IMPACT FACTOR 2017: 5.294
CiteScore 2017: 3.42
SCImago Journal Rank (SJR) 2017: 1.212
Source Normalized Impact per Paper (SNIP) 2017: 1.546
Ion-induced damage and annealing of silicon. Molecular dynamics simulations
A study of the interactions of energetic argon ions with silicon surfaces using molecular dynamics simulations is reported. A dynamic balance between ion-induced damage and recrystallization of the surface is detected. By manipulating ion energy, argon ions are able to both create disordered regions near the surface, and recrystallize these disordered regions.
International Symposium on Plasma Chemistry, International Symposium on Plasma Chemistry, ISPC, Plasma Chemistry, 15th, Orléans, France, 2001-07-09–2001-07-13
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