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Pure and Applied Chemistry

The Scientific Journal of IUPAC

Ed. by Burrows, Hugh / Weir, Ron / Stohner, Jürgen

12 Issues per year


IMPACT FACTOR 2016: 2.626
5-year IMPACT FACTOR: 3.210

CiteScore 2016: 2.45

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Source Normalized Impact per Paper (SNIP) 2016: 1.049

Online
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1365-3075
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Volume 79, Issue 1 (Jan 2007)

Issues

Synthesis and properties of germanium nanowires

Dunwei Wang
  • Corresponding author
  • Division of Chemistry and Chemical Engineering, California Institute of Technology, MC 127-72, Pasadena, CA 91125, USA
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
Published Online: 2009-01-01 | DOI: https://doi.org/10.1351/pac200779010055

As a promising electronic material, Ge nanowire (GeNW) has attracted much attention for its low band gaps, high mobilities, and unprecedented dimensions. This article reviews recent research and advancement on this topic and summarizes many aspects of GeNWs, including preparation, surface chemistry, physical properties, functional devices, and controlled assembly. It is shown that GeNWs can be readily synthesized by chemical methods and their electronic properties are comparable or superior to that of the bulk counterparts. Studies of surface chemistry have revealed dominant roles of surfaces on nanowires, and this result led to successful passivations toward air-stable, high-performance functional devices. Finally, controlled assembly to organize chemically synthesized nanowires into functional structures is discussed. Doors are opened up to widely utilize this novel material as excellent electronic building blocks.

Keywords: assembly; chemical vapor deposition; field effect transistors; nanowires; surface chemistry

References

About the article

Published Online: 2009-01-01

Published in Print: 2007-01-01


Citation Information: Pure and Applied Chemistry, ISSN (Online) 1365-3075, ISSN (Print) 0033-4545, DOI: https://doi.org/10.1351/pac200779010055.

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