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Open Physics

formerly Central European Journal of Physics

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Volume 6, Issue 1

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Volume 1 (2003)

Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Arghya Banerjee
  • Department of Electrical & Computer Engineering, Nevada Nanotechnology Center, Nevada, USA
  • University of Nevada, Las Vegas, Nevada, 89154, USA
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 / Kalyan Chattopadhyay
Published Online: 2008-03-26 | DOI: https://doi.org/10.2478/s11534-008-0005-5

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Abstract

We report on the fabrication of all transparent heterojunction thin film diodes of the form glass/n-ZnO: Al/p-CuAlO2 produced by a combinatorial chemical and physical technique and on a study of their electro-optical properties. The n-ZnO: Al layer was deposited by a sol-gel-dip-coating process whereas the p-CuAlO2 layer was deposited by direct current sputtering techniques. The diode structure, with a total thickness of 1100 nm showed around 60% transmittance in the visible region. The current-voltage characteristics of the device showed a rectifying nature, with a low turn-on voltage around 0.8 V, having a rectification ratio > 50 at ± 2 V. The low turn-on voltage and moderate visible transmittance of the transparent diode indicate its potential application in the field of “Transparent” or “Invisible Electronics”.

PACS: 73.40.Lq; 68.35.Dv; 78.66.Li

Keywords: Transparent heterojunction; p-CuAlO2; sol-gel-dip-coating; sputtering; invisible electronics

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About the article

Published Online: 2008-03-26

Published in Print: 2008-03-01

Citation Information: Open Physics, Volume 6, Issue 1, Pages 57–63, ISSN (Online) 2391-5471, DOI: https://doi.org/10.2478/s11534-008-0005-5.

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© 2008 Versita Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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