Jump to ContentJump to Main Navigation
Show Summary Details

Open Physics

formerly Central European Journal of Physics

Editor-in-Chief: Feng, Jonathan

Managing Editor: Lesna-Szreter, Paulina

1 Issue per year


IMPACT FACTOR 2015: 0.948
5-year IMPACT FACTOR: 0.977

SCImago Journal Rank (SJR) 2015: 0.458
Source Normalized Impact per Paper (SNIP) 2015: 1.142
Impact per Publication (IPP) 2015: 1.222

Open Access
Online
ISSN
2391-5471
See all formats and pricing
Volume 7, Issue 2 (Jun 2009)

Issues

Wet-chemical treatment and electronic interface properties of silicon solar cell substrates

Heike Angermann
  • Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Siliziumphotovoltaik, Kekuléstraβe 5, D-12489, Berlin, Germany
  • Email:
/ Jörg Rappich
  • Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Siliziumphotovoltaik, Kekuléstraβe 5, D-12489, Berlin, Germany
  • Email:
/ Carola Klimm
  • Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Siliziumphotovoltaik, Kekuléstraβe 5, D-12489, Berlin, Germany
  • Email:
Published Online: 2009-04-26 | DOI: https://doi.org/10.2478/s11534-009-0055-3

Abstract

On textured n-type silicon substrates for solar cell manufacturing, the relation between light trapping behavior, structural imperfections, energetic distribution of interface state densities and interface recombination losses were investigated by applying surface sensitive techniques. The field-modulated surface photovoltage (SPV), in-situ photoluminescence (PL) measurements, total hemispherical UV-NIR-reflectance measurements and electron microscopy (SEM) were employed to yield detailed information on the influence of wet-chemical treatments on preparation induced micro-roughness and electronic properties of polished and textured silicon substrates. It was shown that isotropic as well as anisotropic etching of light trapping structures result in high surface micro-roughness and density of interface states. Removing damaged surface layers in the nm range by wet-chemical treatments, the density of these states and the related interface recombination loss can be reduced. In-situ PL measurements were applied to optimise HF-treatment times aimed at undamaged, oxide-free and hydrogen-terminated substrate surfaces as starting material for subsequent solar cell preparations.

Keywords: texturisation of solar cell substrates; silicon surface passivation; interface states, recombination losses, surface photovoltage; insitu photoluminescence measurements; electron microscopy

PACS: 68.37.-d; 73.20.At; 73.50.Pz; 81.65.Cf; 81.65.Rv

  • [1] T. Korrmann, P. Garnier, G. Chabanne, A. Fortuin, Thin Solid Films, 517, 269 (2008) http://dx.doi.org/10.1016/j.tsf.2008.08.014 [Crossref]

  • [2] J. Rappich, V.Yu. Timoshenko, Th. Dittrich, J. Electrochem. Soc. 144, 493 (1997) http://dx.doi.org/10.1149/1.1837438 [Crossref]

  • [3] H. Angermann, Anal. Bioanal. Chem. 374, 676 (2002) http://dx.doi.org/10.1007/s00216-002-1450-4 [Crossref]

  • [4] V. Yu. Timoshenko et al., J. Appl. Phys. 85, 4171 (1999) http://dx.doi.org/10.1063/1.370327 [Crossref]

  • [5] J. Rappich et al., Microelectron. Eng. 80, 62 (2005) http://dx.doi.org/10.1016/j.mee.2005.04.022 [Crossref]

  • [6] W. Henrion, M. Rebien, H. Angermann, A. Röseler, Appl. Surf. Sci. 202, 199 (2002) http://dx.doi.org/10.1016/S0169-4332(02)00923-6 [Crossref]

  • [7] W. Henrion, A. Röseler, H. Angermann, M. Rebien, Phys. Status Solidi A 175, 121 (1999) http://dx.doi.org/10.1002/(SICI)1521-396X(199909)175:1<121::AID-PSSA121>3.0.CO;2-D [Crossref]

  • [8] W. J. Sievert, K.-U. Zimmermann, J. S. Starzynski, European Semiconductor 27, 17 (2005)

  • [9] W. Kern, J. Electrochem. Soc. 137, 1987 (1990) http://dx.doi.org/10.1149/1.2086825 [Crossref]

  • [10] Y. A. Chabal, G. S. Higashi, K. Raghavachari, V. A. Burrows, J. Vac. Sci. Technol. A 7, 2104 (1989) http://dx.doi.org/10.1116/1.575980 [Crossref]

  • [11] H. Angermann, Appl. Surf. Sci. 254, 8067 (2008) http://dx.doi.org/10.1016/j.apsusc.2008.03.022 [Crossref]

  • [12] P. Allongue, C. H. Villeneuve, S. Morin, R. Boukherroub, D. D. M. Wayner, Electrochim. Acta, 4591 (2000)

  • [13] J. D. Hylton, A. R. Burgers, W. C. Sinke, J. Electrochem. Soc. 151, 6, 408 (2004) http://dx.doi.org/10.1149/1.1738137 [Crossref]

  • [14] W. Weinreich, J. Acker, I. Gräber, Semicond. Sci. Technol., 1278 (2006)

  • [15] H. Hardtdegen et al., Phys. Status Solidi B 242, 2581 (2005) http://dx.doi.org/10.1002/pssb.200541099 [Crossref]

  • [16] T. Hattori, Ultraclean Surface Processing of Silicon Wafers (Springer, Heidelberg, 1998) 437

  • [17] K. Heilig, Experimentelle Technik der Physik 14, 135 (1968)

  • [18] Y. W. Lam, J. Phys. D Appl. Phys. 4, 1370 (1971) http://dx.doi.org/10.1088/0022-3727/4/9/318 [Crossref]

  • [19] T. Ohmi, M. Miyashita, M. Itano, T. Imaoka, I. Kawanabe, IEEE T. Electron. Dev. 39, 537 (1992) http://dx.doi.org/10.1109/16.123475 [Crossref]

  • [20] H. F. Schmidt et al., Jpn. J. Appl. Phys. 34, 727 (1995) http://dx.doi.org/10.1143/JJAP.34.727 [Crossref]

  • [21] H. Angermann et al., Thin Solid Films 516, 6775 (2008) http://dx.doi.org/10.1016/j.tsf.2007.12.033 [Crossref]

  • [22] M. Schmidt et al., Thin Solid Films 515, 7475 (2007) http://dx.doi.org/10.1016/j.tsf.2006.11.087 [Crossref]

  • [23] H. Angermann et al., In: G. Willeke, H. Ossenbrink, P. Helm (Eds.), 23nd European Photovoltaic Solar Energy Conference, 3–7 September 2007, Valencia, Spain, 1422

  • [24] W. D. Eades, R. M. Swanson, J. Appl. Phys. 58, 4267 (1985) http://dx.doi.org/10.1063/1.335562 [Crossref]

  • [25] H. Angermann et al., Mat. Sci. Eng. B-Solid., DOI:10.1016/j.mseb.2008.10.044 [Crossref]

  • [26] V. Yu. Timoshenko, J. Rappich, Th. Dittrich, Jpn. J. Appl. Phys. 36, L58 (1997) http://dx.doi.org/10.1143/JJAP.36.L58 [Crossref]

About the article

Published Online: 2009-04-26

Published in Print: 2009-06-01


Citation Information: Open Physics, ISSN (Online) 2391-5471, DOI: https://doi.org/10.2478/s11534-009-0055-3. Export Citation

© 2009 Versita Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. (CC BY-NC-ND 3.0)

Citing Articles

Here you can find all Crossref-listed publications in which this article is cited. If you would like to receive automatic email messages as soon as this article is cited in other publications, simply activate the “Citation Alert” on the top of this page.

[1]
Hsin-Ying Lee, Ting-Chun Wang, and Chun-Yen Tseng
International Journal of Photoenergy, 2014, Volume 2014, Page 1
[2]
G. Kulesza, P. Panek, and P. Zięba
Archives of Civil and Mechanical Engineering, 2014, Volume 14, Number 4, Page 595
[3]
Bert Stegemann, Jan Kegel, Mathias Mews, Erhard Conrad, Lars Korte, Uta Stürzebecher, and Heike Angermann
Energy Procedia, 2013, Volume 38, Page 881
[4]
Sindhuja Sridharan, Navakanta Bhat, and K. N. Bhat
Applied Physics Letters, 2013, Volume 102, Number 2, Page 021604
[5]
Stefanie M. Greil, Andreas Schöpke, and Jörg Rappich
ChemPhysChem, 2012, Volume 13, Number 12, Page 2982
[6]
Damian Pysch, Christoph Meinhard, Nils-Peter Harder, Martin Hermle, and Stefan W. Glunz
Journal of Applied Physics, 2011, Volume 110, Number 9, Page 094516
[7]
Stefanie M. Greil, Nicola Mingirulli, Lars Korte, Korina Hartmann, Andreas Schöpke, Jörg Rappich, and Bernd Rech
Energy Procedia, 2011, Volume 8, Page 269
[9]
S.N. Chattopadhyay, C.B. Overton, S. Vetter, M. Azadeh, B.H. Olson, and N. El Naga
JSTS:Journal of Semiconductor Technology and Science, 2010, Volume 10, Number 3, Page 213
[10]
Santosh Shrestha
Progress in Photovoltaics: Research and Applications, 2010, Volume 18, Number 5, Page 385

Comments (0)

Please log in or register to comment.
Log in