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Open Physics

formerly Central European Journal of Physics

Editor-in-Chief: Feng, Jonathan

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Volume 7, Issue 2 (Jun 2009)


Wet-chemical treatment and electronic interface properties of silicon solar cell substrates

Heike Angermann
  • Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Siliziumphotovoltaik, Kekuléstraβe 5, D-12489, Berlin, Germany
  • Email:
/ Jörg Rappich
  • Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Siliziumphotovoltaik, Kekuléstraβe 5, D-12489, Berlin, Germany
  • Email:
/ Carola Klimm
  • Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Siliziumphotovoltaik, Kekuléstraβe 5, D-12489, Berlin, Germany
  • Email:
Published Online: 2009-04-26 | DOI: https://doi.org/10.2478/s11534-009-0055-3


On textured n-type silicon substrates for solar cell manufacturing, the relation between light trapping behavior, structural imperfections, energetic distribution of interface state densities and interface recombination losses were investigated by applying surface sensitive techniques. The field-modulated surface photovoltage (SPV), in-situ photoluminescence (PL) measurements, total hemispherical UV-NIR-reflectance measurements and electron microscopy (SEM) were employed to yield detailed information on the influence of wet-chemical treatments on preparation induced micro-roughness and electronic properties of polished and textured silicon substrates. It was shown that isotropic as well as anisotropic etching of light trapping structures result in high surface micro-roughness and density of interface states. Removing damaged surface layers in the nm range by wet-chemical treatments, the density of these states and the related interface recombination loss can be reduced. In-situ PL measurements were applied to optimise HF-treatment times aimed at undamaged, oxide-free and hydrogen-terminated substrate surfaces as starting material for subsequent solar cell preparations.

Keywords: texturisation of solar cell substrates; silicon surface passivation; interface states, recombination losses, surface photovoltage; insitu photoluminescence measurements; electron microscopy

PACS: 68.37.-d; 73.20.At; 73.50.Pz; 81.65.Cf; 81.65.Rv

  • [1] T. Korrmann, P. Garnier, G. Chabanne, A. Fortuin, Thin Solid Films, 517, 269 (2008) http://dx.doi.org/10.1016/j.tsf.2008.08.014 [Crossref]

  • [2] J. Rappich, V.Yu. Timoshenko, Th. Dittrich, J. Electrochem. Soc. 144, 493 (1997) http://dx.doi.org/10.1149/1.1837438 [Crossref]

  • [3] H. Angermann, Anal. Bioanal. Chem. 374, 676 (2002) http://dx.doi.org/10.1007/s00216-002-1450-4 [Crossref]

  • [4] V. Yu. Timoshenko et al., J. Appl. Phys. 85, 4171 (1999) http://dx.doi.org/10.1063/1.370327 [Crossref]

  • [5] J. Rappich et al., Microelectron. Eng. 80, 62 (2005) http://dx.doi.org/10.1016/j.mee.2005.04.022 [Crossref]

  • [6] W. Henrion, M. Rebien, H. Angermann, A. Röseler, Appl. Surf. Sci. 202, 199 (2002) http://dx.doi.org/10.1016/S0169-4332(02)00923-6 [Crossref]

  • [7] W. Henrion, A. Röseler, H. Angermann, M. Rebien, Phys. Status Solidi A 175, 121 (1999) http://dx.doi.org/10.1002/(SICI)1521-396X(199909)175:1<121::AID-PSSA121>3.0.CO;2-D [Crossref]

  • [8] W. J. Sievert, K.-U. Zimmermann, J. S. Starzynski, European Semiconductor 27, 17 (2005)

  • [9] W. Kern, J. Electrochem. Soc. 137, 1987 (1990) http://dx.doi.org/10.1149/1.2086825 [Crossref]

  • [10] Y. A. Chabal, G. S. Higashi, K. Raghavachari, V. A. Burrows, J. Vac. Sci. Technol. A 7, 2104 (1989) http://dx.doi.org/10.1116/1.575980 [Crossref]

  • [11] H. Angermann, Appl. Surf. Sci. 254, 8067 (2008) http://dx.doi.org/10.1016/j.apsusc.2008.03.022 [Crossref]

  • [12] P. Allongue, C. H. Villeneuve, S. Morin, R. Boukherroub, D. D. M. Wayner, Electrochim. Acta, 4591 (2000)

  • [13] J. D. Hylton, A. R. Burgers, W. C. Sinke, J. Electrochem. Soc. 151, 6, 408 (2004) http://dx.doi.org/10.1149/1.1738137 [Crossref]

  • [14] W. Weinreich, J. Acker, I. Gräber, Semicond. Sci. Technol., 1278 (2006)

  • [15] H. Hardtdegen et al., Phys. Status Solidi B 242, 2581 (2005) http://dx.doi.org/10.1002/pssb.200541099 [Crossref]

  • [16] T. Hattori, Ultraclean Surface Processing of Silicon Wafers (Springer, Heidelberg, 1998) 437

  • [17] K. Heilig, Experimentelle Technik der Physik 14, 135 (1968)

  • [18] Y. W. Lam, J. Phys. D Appl. Phys. 4, 1370 (1971) http://dx.doi.org/10.1088/0022-3727/4/9/318 [Crossref]

  • [19] T. Ohmi, M. Miyashita, M. Itano, T. Imaoka, I. Kawanabe, IEEE T. Electron. Dev. 39, 537 (1992) http://dx.doi.org/10.1109/16.123475 [Crossref]

  • [20] H. F. Schmidt et al., Jpn. J. Appl. Phys. 34, 727 (1995) http://dx.doi.org/10.1143/JJAP.34.727 [Crossref]

  • [21] H. Angermann et al., Thin Solid Films 516, 6775 (2008) http://dx.doi.org/10.1016/j.tsf.2007.12.033 [Crossref]

  • [22] M. Schmidt et al., Thin Solid Films 515, 7475 (2007) http://dx.doi.org/10.1016/j.tsf.2006.11.087 [Crossref]

  • [23] H. Angermann et al., In: G. Willeke, H. Ossenbrink, P. Helm (Eds.), 23nd European Photovoltaic Solar Energy Conference, 3–7 September 2007, Valencia, Spain, 1422

  • [24] W. D. Eades, R. M. Swanson, J. Appl. Phys. 58, 4267 (1985) http://dx.doi.org/10.1063/1.335562 [Crossref]

  • [25] H. Angermann et al., Mat. Sci. Eng. B-Solid., DOI:10.1016/j.mseb.2008.10.044 [Crossref]

  • [26] V. Yu. Timoshenko, J. Rappich, Th. Dittrich, Jpn. J. Appl. Phys. 36, L58 (1997) http://dx.doi.org/10.1143/JJAP.36.L58 [Crossref]

About the article

Published Online: 2009-04-26

Published in Print: 2009-06-01

Citation Information: Open Physics, ISSN (Online) 2391-5471, DOI: https://doi.org/10.2478/s11534-009-0055-3. Export Citation

© 2009 Versita Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. (CC BY-NC-ND 3.0)

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