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Open Physics

formerly Central European Journal of Physics

Editor-in-Chief: Feng, Jonathan

Managing Editor: Lesna-Szreter, Paulina

1 Issue per year


IMPACT FACTOR 2016 (Open Physics): 0.745
IMPACT FACTOR 2016 (Central European Journal of Physics): 0.765

CiteScore 2016: 0.82

SCImago Journal Rank (SJR) 2015: 0.458
Source Normalized Impact per Paper (SNIP) 2015: 1.142

Open Access
Online
ISSN
2391-5471
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Volume 9, Issue 2

Issues

TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors

Adam Łaszcz / Jacek Ratajczak / Andrzej Czerwinski / Jerzy Kątcki / Nicolas Breil / Guilhem Larrieu / Emmanuel Dubois
Published Online: 2011-02-20 | DOI: https://doi.org/10.2478/s11534-010-0135-4

Abstract

Transmission electron microscopy methods were used to determine the impact of two different implantation processes on the morphology of platinum silicide layers constituting low Schottky barrier contacts intended as the source/drain in MOS transistors. These processes are very promising candidates for the reduction of the Schottky barrier height (SBH) of contacts and are realized by (i) implantation-through-metal (ITM) followed by dopant-segregation induced by silicidation annealing and (ii) implantation-through-silicide (ITS) followed by dopant-segregation due to the post-silicidation annealing. The studies showed that depending on the type and conditions of the process (ITM or ITS with various post-silicidation annealing temperatures) different morphologies of PtSi layers and PtSi/Si interfaces roughnesses are observed. Better quality silicide layers and silicide/silicon interfaces were found for samples after the ITS process with post-silicidation annealing at 500°C than for samples after the ITM process or the ITS process with post-silicidation annealing at temperatures not exceeding 400°C.

The observed microstructure of grains and interfaces in these samples, along with the impact of the dopant-segregation, may significantly influence the SBH value. The diffraction patterns and EDXS measurements revealed that regardless of the process type, the formed silicide layer is always PtSi.

Keywords: transmission electron microscopy (TEM); high-resolution transmission electron microscopy (HRTEM); low Schottky barrier height (SBH); PtSi/Si contacts

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About the article

Published Online: 2011-02-20

Published in Print: 2011-04-01


Citation Information: Open Physics, Volume 9, Issue 2, Pages 423–427, ISSN (Online) 2391-5471, DOI: https://doi.org/10.2478/s11534-010-0135-4.

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© 2011 Versita Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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