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Open Physics

formerly Central European Journal of Physics

Editor-in-Chief: Seidel, Sally

Managing Editor: Lesna-Szreter, Paulina


IMPACT FACTOR 2018: 1.005

CiteScore 2018: 1.01

SCImago Journal Rank (SJR) 2018: 0.237
Source Normalized Impact per Paper (SNIP) 2018: 0.541

ICV 2017: 162.45

Open Access
Online
ISSN
2391-5471
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Volume 9, Issue 4

Issues

Volume 13 (2015)

Simulations of AlGaAs/GaAs heterojunction phototransistors

Beata Ściana
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland
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/ Marek Panek
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland
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/ Artur Borczuch
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland
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  • De Gruyter OnlineGoogle Scholar
/ Marek Tłaczała
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland
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Published Online: 2011-04-30 | DOI: https://doi.org/10.2478/s11534-011-0023-6

Abstract

Heterojunction bipolar phototransistors, based on GaAs technology, are widely used in optoelectronic integrated circuits. One of the methods to improve phototransistor performance is applying a delta-doped thin base, which causes both a higher current gain and a better time response. There is a lack of information about this kind of device in the literature. Our work presents the results of computer simulations of AlGaAs/GaAs n-p-n phototransistors, with a bulk-doped and delta-doped base working as two- and threeterminal devices. The characteristics and device parameters obtained clearly show that phototransistors with delta-doped base have higher sensitivity and a better time response compared to the structures with a bulk-doped base. Based on simulation results, we modified the epitaxial phototransistor structure with a double delta-doped base that should improve device performance.

Keywords: phototransistor; AlGaAs/GaAs heterostructure; delta-doping; spectral characteristics; response time

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About the article

Published Online: 2011-04-30

Published in Print: 2011-08-01


Citation Information: Open Physics, Volume 9, Issue 4, Pages 1114–1121, ISSN (Online) 2391-5471, DOI: https://doi.org/10.2478/s11534-011-0023-6.

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© 2011 Versita Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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