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Open Physics

formerly Central European Journal of Physics

Editor-in-Chief: Seidel, Sally

Managing Editor: Lesna-Szreter, Paulina

1 Issue per year


IMPACT FACTOR 2017: 0.755
5-year IMPACT FACTOR: 0.820

CiteScore 2017: 0.83

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Open Access
Online
ISSN
2391-5471
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Volume 10, Issue 1

Issues

Volume 13 (2015)

Study of density of interface states in MOS structure with ultrathin NAOS oxide

Stanislav Jurečka / Hikaru Kobayashi / Woo-Byoung Kim / Masao Takahashi / Emil Pinčík
Published Online: 2011-12-03 | DOI: https://doi.org/10.2478/s11534-011-0092-6

Abstract

The quality of the interface region in a semiconductor device and the density of interface states (DOS) play important roles and become critical for the quality of the whole device containing ultrathin oxide films. In the present study the metal-oxide-semiconductor (MOS) structures with ultrathin SiO2 layer were prepared on Si(100) substrates by using a low temperature nitric acid oxidation of silicon (NAOS) method. Carrier confinement in the structure produces the space quantization effect important for localization of carriers in the structure and determination of the capacitance. We determined the DOS by using the theoretical capacitance of the MOS structure computed by the quantum mechanical approach. The development of the density of SiO2/Si interface states was analyzed by theoretical modeling of the C-V curves, based on the superposition of theoretical capacitance without interface states and additional capacitance corresponding to the charges trapped by the interface states. The development of the DOS distribution with the passivation procedures can be determined by this method.

Keywords: semiconductor; density of states; interface states; MOS; capacitance

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About the article

Published Online: 2011-12-03

Published in Print: 2012-02-01


Citation Information: Open Physics, Volume 10, Issue 1, Pages 210–217, ISSN (Online) 2391-5471, DOI: https://doi.org/10.2478/s11534-011-0092-6.

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© 2011 Versita Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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[2]
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