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Open Physics

formerly Central European Journal of Physics

Editor-in-Chief: Seidel, Sally

Managing Editor: Lesna-Szreter, Paulina


IMPACT FACTOR 2017: 0.755
5-year IMPACT FACTOR: 0.820

CiteScore 2017: 0.83

SCImago Journal Rank (SJR) 2017: 0.241
Source Normalized Impact per Paper (SNIP) 2017: 0.537

ICV 2017: 162.45

Open Access
Online
ISSN
2391-5471
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Volume 12, Issue 10

Issues

Volume 13 (2015)

Flash memory cells data loss caused by total ionizing dose and heavy ions

Andrey Petrov / Alexey Vasil’ev / Anastasia Ulanova / Alexander Chumakov / Alexander Nikiforov
Published Online: 2014-08-16 | DOI: https://doi.org/10.2478/s11534-014-0503-6

Abstract

The paper provides experimental results of flash memory loss data investigation. Possible mechanisms of charge loss from storage element are reviewed. We provide some guidelines for flash memory evaluation to space application.

Keywords: flash memory; single event upsets; total dose

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About the article

Published Online: 2014-08-16

Published in Print: 2014-10-01


Citation Information: Open Physics, Volume 12, Issue 10, Pages 725–729, ISSN (Online) 2391-5471, DOI: https://doi.org/10.2478/s11534-014-0503-6.

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© 2014 Versita Warsaw. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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