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Open Physics

formerly Central European Journal of Physics

Editor-in-Chief: Feng, Jonathan

Managing Editor: Lesna-Szreter, Paulina

1 Issue per year


IMPACT FACTOR 2016 (Open Physics): 0.745
IMPACT FACTOR 2016 (Central European Journal of Physics): 0.765

CiteScore 2016: 0.82

SCImago Journal Rank (SJR) 2015: 0.458
Source Normalized Impact per Paper (SNIP) 2015: 1.142

Open Access
Online
ISSN
2391-5471
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Volume 13, Issue 1 (Jan 2015)

Issues

Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

Diana Nesheva
  • Corresponding author
  • Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, 1784 Sofia, Bulgaria
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/ Nikola Nedev
  • Corresponding author
  • Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. esc. Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
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/ Mario Curiel
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  • Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. esc. Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
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/ Valeri Dzhurkov
  • Corresponding author
  • Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, 1784 Sofia, Bulgaria
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/ Abraham Arias
  • Corresponding author
  • Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. esc. Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
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/ Emil Manolov
  • Corresponding author
  • Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, 1784 Sofia, Bulgaria
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/ David Mateos
  • Corresponding author
  • Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. esc. Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
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/ Benjamin Valdez
  • Corresponding author
  • Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. esc. Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
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/ Irina Bineva
  • Corresponding author
  • Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, 1784 Sofia, Bulgaria
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/ Rigoberto Herrera
  • Corresponding author
  • Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. esc. Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
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Published Online: 2014-11-03 | DOI: https://doi.org/10.1515/phys-2015-0006

Abstract

This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process for preparation of metal-oxide-semiconductor structures with three-layer gate dielectrics is described. Electron Microscopy investigations prove the Si nanocrystals growth, reveal the crystal spatial distribution in the gate dielectric and provide evidences for the formation of a top SiO2 layerwhen applying the two-step annealing. Two types of MOS structures with three region gate dielectricswere fabricated and characterized by high frequency capacitance/conductancevoltage (C/G-V) measurements. The effect of gamma and ultraviolet radiation on the flatband voltage of preliminary charged metal-oxide-semiconductor structures is investigated and discussed.

Keywords : MOS structures; Si nanocrystals; radiation dosimetry

PACS : 73.40.Qv; 68.65.-k; 61.80.-x

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About the article

Received: 2014-02-28

Accepted: 2014-08-23

Published Online: 2014-11-03

Published in Print: 2015-01-01


Citation Information: Open Physics, ISSN (Online) 2391-5471, DOI: https://doi.org/10.1515/phys-2015-0006.

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© 2015 D. Nesheva et al.. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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R. Herrera, M. Curiel, A. Arias, D. Nesheva, N. Nedev, E. Manolov, V. Dzhurkov, O. Perez, B. Valdez, D. Mateos, I. Bineva, W. de la Cruz, and O. Contreras
Materials Science in Semiconductor Processing, 2015, Volume 37, Page 229

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