Skip to content
BY-NC-ND 3.0 license Open Access Published by De Gruyter Open Access December 30, 2016

The calculation of the optical gap energy of ZnXO (X = Bi, Sn and Fe)

  • Said Benramache EMAIL logo and Boubaker Benhaoua
From the journal Open Physics

Abstract

In this paper, a new mathematical model has been developed to calculate the optical properties of nano materials a function of their size and structure. ZnO has good characterizatics in optical, electrical, and structural crystallisation; We will demonstrate that the direct optical gap energy of ZnO films grown by US and SP spray deposition can be calculated by investigating the correlation between solution molarity, doping levels of doped films and their Urbache energy. A simulation model has been developed to calculate the optical band gap energy of undoped and Bi, Sn and Fe doped ZnO thin films. The measurements by thus proposed models are in agreement with experimental data, with high correlation coefficients in the range 0.94-0.99. The maximum calculated enhancement of the optical gap energy of Sn doped ZnO thin films is always higher than the enhancement attainable with an Fe doped film, where the minimum error was found for Bi and Sn doped ZnO thin films to be 2,345 and 3,072%, respectively. The decrease in the relative errors from undoped to doped films can be explained by the good optical properties which can be observed in the fewer number of defects as well as less disorder.

1 Introduction

Zinc oxide (ZnO), as one of the most important functional semiconductor oxide nanostructures, has a single crystal phase which crystallizes in the hexagonal wurtzite structure (WZ) with lattice parameters: a = 0.3249 nm, c = 0.5206 nm; belonging to the space group P63mc, and is characterized by two interconnecting sublattices of Zn2+ and O2–, such that each Zn ions is surrounded by a tetrahedral of O ions, and vice-versa [14]. Transparent conducting oxides (n-TCO) materials like ZnO based thin films have gained much interest in science and technology. They are usually prepared on glass substrates for opto-electrical devices because of its low resistivity, high optical transparency, good optical gap energy, as well as excellent adhesion to substrates and chemical stability. Due to the excellent structural and optical properties of doped films, ZnO has been used in a wide variety of applications such as transparent electrodes, ferromagnetism, semiconductors, piezoelectric, optoelectronic, solar cells, spintronics and nanodevices [116]. ZnO is one of the most important binary II-VI semiconductor compounds is a natural n-type electrical conductor with a direct energy wide band gap of 3.37 eV at room temperature, a large exciton binding energy (60 meV) [17,18].

ZnO thin films can be produced by several techniques such as reactive evaporation and thermal annealing [19], mol-ecular beam epitaxy (MBE) [20], magnetron sputtered techn-ique [21], pulsed laser deposition (PLD) [22], the low-temperature solution method [23], potentiostatic electrodeposition [24], the sol-gel technique [25], chemical vapor deposition, electrochemical deposition [26] and spray pyrolysis [27].

In this work, we have studied a new model to estimate the optical gap energy of undoped and doped ZnO thin films, which were studied as a function of the Urbach energy, solution molarities and the doping level of films. The investigation focuses on the specific of different doping shows of Bi, Sn and Fe doped ZnO films due to good transparency properties and they provide a range of different values of direct band gaps to obtain a good agreement between the experimental data and correlated optical gap values.

2 Experimental and Methods

To Investigate a new calculate of nanomaterials depends on the size, structure and controlled optical properties, it is shown in the growth mechanism and growth parameters. In this study, the undoped and doped ZnO samples were deposited on glass substrates using the ultrasonic spray and spray pyrolysis techniques. In general, the depositions were performed at a substrate temperature of 350°C. The optical band gap energy and the Urbach energy of undoped and Bi, Sn and Fe doped ZnO thin films were taken from the literature [2844], which studied the effect of precursor molarity, doping level and substrate temperature on structural, electrical and optical properties of undoped and doped ZnO thin films with Bi, Sn and Fe.

Table 1 shows the typical procedures of experimental research designs, which used zinc as a precursor. All experimental data of undoped and Bi, Sn and Fe doped ZnO thin films are presented in Tables 2, 3, 4, and 5, respectively, the differences in the experimental data can be explained by differences in the deposition circumstances, such as reactor geometry, substrate temperature, deposition time, flows, concentration of ZnO solution, annealing temperature, etc. As can be seen, the optical gap energy and Urbach energy of undoped and doped ZnO thin films were varied in a nonlinear form. Note that the model proposed of undoped ZnO thin films with precursor molarity as expressed as [38,39].

Table 1

The parameters conditions were used in this research

ParameterCondition
Methodultrasonic Spray or spray pyrolysis
Oxidezinc oxide thin films
Zn reactantsZn acetate or ZnCl2
Solventsethanol- methanol- water
Substrateglass
Molarity (M)0.02,0.05,0.075,0.1,0.125
Temperature300,350,360,400,410,450
°C
dopantX = Bi, Sn and Fe
[X]/[Zn] %1 to 15

Table 2

The parameters conditions used in this research

SamplesM (mol·l–1)T(°C)EgExp.(eV)EuExp. (eV)EgCor.(eV)ϵ (%)Ref.
10.053503.080.92213.1151.136[28]
20.0753503.220.31863.2000.590[28]
30.13503.370.0853.2972.166[28]
40.1253503.150.17573.2663.682[28]
50.13503.100.27343.2123.612[29]
60.13503.2670.1083.2730.183[30]
70.023503.190.083.2040.439[31]
80.13503.250.0643.3141.969[32]
90.13503.3040.11393.2790.757[33]
100.13503.3170.09833.2880.874[34]
110.13503.270.173.2550.458[35]
120.13503.250.2093.2430.215[36]
130.13503.230.4903.1921.176[37]

Table 3

Summary results of experimental data and the correlate optical gap energy for Bi doped ZnO thin films.

[Bi]/[Zn]T(°C)EgExp.EuExp.EgCor.ϵ (%)
%(eV)(eV)(eV)
Bi doped ZnO thin films with 0.02 mol·l-1 [31]
A = -1.37139 and Β = -39.00365
03503.190.083.2040.439
13503.1950.0113.2561.909
23503.210.083.1731.152
33503.210.0953.1591.588
43503.2250.523.2170.248
53503.2390.533.2470.247
Bi doped ZnO thin films with 0.05 mol·l-1 [40]
A = -1.37139 and Β = -39.00365
04503.2500.25273.1911.815
14503.2400.41593.1642.345
34503.2000.45733.1700.938
54503.1200.49543.1811.955

Table 4

Summary results of experimental data and the correlate optical gap energy for Sn doped ZnO thin films.

[Sn]/[Zn]T(°C)EgExp.EuExp.EgCor.ϵ (%)
%(eV)(eV)(eV)
Sn doped ZnO thin films with 0.02 mol·l-1 [41]
A = -1.91294 and Β = 33.62015
04503.370.0553.3670.089
14503.260.0543.3322.208
34503.250.0583.2480.061
54503.180.0583.1660.440
Sn doped ZnO thin films with 0.05 mol·l–1 [42]
A = -1.91294 and Β = 33.62015
04003.1250.3013.2213.072
14003.030.6753.0621.056
1.54002.9851.1432.9610.804
24002.881.3522.8850.173

Table 5

Summary results of experimental data and the correlate optical gap energy for Fe doped ZnO thin films.

[Fe]/[Zn]T(°C)EgExp.EuExp.EgCor.ϵ (%)
%(eV)(eV)(eV)
Fe doped ZnO thin films with 0.02 mol·l–1 [43]
A = -13.92950 and Β = -941.53779
03003.290.0733.3060.486
13002.670.1362.97411.385
23002.750.1362.6354.181
Fe doped ZnO thin films with 0.05 mol·l–1 [44]
A = -13.92950 and Β = -941.53779
04103.2550.0813.2991.351
14103.1150.1643.0711.412
1.54103.1350.1973.0981.180
24103.1050.2193.1220.547

The band gap energy of Bi, Sn and Fe doped ZnO thin films can be calculated with point crucial of precursor molarity of undoped films and doping levels; the ZnO exhibit a single crystals n-type semiconductor with a high crystallinity.

3 Theoretical Calculations

3.1 Undoped ZnO Thin Films

Firstly, for undoped ZnO thin films, the optical gap energy was calculated using a nonlinear form by varying the Urbach energy and precursor molarity, found the following relation, as expressed as [38,39]:

(1)Eg=aMEub

where Eu is the Urbach energy, Eg is the band gap energy correlate, M is the precursor molarity (see Table 2), and a and b are empirical constants as a = 3.28711 and b = 0.0184683.

3.2 Doped ZnO Thin Films

For the Bi, Sn and Fe doped ZnO films, the correlation to calculate the optical gaps energies were based on Eq. (1) with X0 = 0 wt.%. To perform the correlation in this step the optical parameters were measured with their doping levels. The correlation can be written in another form:

(2)Eg=a(1+AX0)MEu(b(1+BX0))

where a and b are empirical constants calculated according to Eq. (1), A and Β are empirical constants related by the doped films, and X0 is the concentration of doping of Bi, Sn and Fe doped ZnO films, presented in Table 3, 4 and 5.

3.3 The Relative Error Measurement

In order to compare the obtained models with practical results used in this experiment, a relative error value is used, which is measured between the experimental data and correlated by the following relationship:

(3)ϵ=(EgExp.EgCor.)EgExp.×100%

where EgExp. and EgCor. are the experimental and correlated values of optical gap energy, respectively, ϵ is the relative error.

4 Results and Discussion

Figure 1 shows the variation of experimental and correlated optical gap energy for undoped ZnO thin films. The correlated values were scaled according to Eq. (1), these results are shown in Table 2, which was estimated as a function of solution molarity and Urbach energy. It can be seen that all estimate values are proportional to the experimental data. Thus, the calculation by the proposed equation is in qualitative agreement with the experimental data, it is shown that the correlation coefficient is high at 0.97, which the maximum agreement of the estimation was found to be minimum in error. As shown in Figures 2, 3 and 4 (see Tables 3, 4 and 5), show the evolution of doping levels Bi, Sn and Fe of doped ZnO thin films on the calculation of optical gap energy, respectively. It are presented as a function of Urbach energy according to Eq. (2), which were have a different empirical constants A and Β as presented in Tables 3, 4 and 5. As can be seen, all correlation coefficients are higher than 0.94, for the Sn doped ZnO thin film is highest, compared to the other dopants and undoped films. It can also be seen that the calculation values are in qualitative agreements with the experimental data, which the maximum agreement of the estimation was found to be minimum relative error. The correlation coefficient depends on both relative errors and doping via:

Figure 1 The variation of optical gap energy experimental and correlate of undoped ZnO thin films.
Figure 1

The variation of optical gap energy experimental and correlate of undoped ZnO thin films.

Figure 2 The variation of optical gap energy experimental and correlate of Bi doped ZnO thin films.
Figure 2

The variation of optical gap energy experimental and correlate of Bi doped ZnO thin films.

Figure 3 The variation of optical gap energy experimental and correlate of Sn doped ZnO thin films.
Figure 3

The variation of optical gap energy experimental and correlate of Sn doped ZnO thin films.

Figure 4 The variation of optical gap energy experimental and correlate of Fe doped ZnO thin films.
Figure 4

The variation of optical gap energy experimental and correlate of Fe doped ZnO thin films.

(4)R=1iNϵiN

where N is the number of measurement and ϵ is the relative error. Figures 5 and 6, show the relative errors of optical gap energy of undoped and doped thin films, respectively. For the undoped film all relative errors are smaller than 4%, however, it was found that the relative error of the optical gap energy of doped films are improved with the maximum enhancement of minimum error of Bi and Sn doped ZnO thin films at 2,345% and 3,072%, respectively. It can be seen that these models are suitable for calculation of optical properties of ZnO thin films with varying of some parameters. The decrease in the relative error of undoped to doped films can be explained by the good optical properties which can observe in fewer defects and less disorder.

Figure 5 The variation of error value calculates of optical gap energy of undoped ZnO thin films.
Figure 5

The variation of error value calculates of optical gap energy of undoped ZnO thin films.

Figure 6 The variation of error value calculates of optical gap energy of Bi, Sn and Fe doped ZnO thin films.
Figure 6

The variation of error value calculates of optical gap energy of Bi, Sn and Fe doped ZnO thin films.

5 Conclusion

In summary, the undoped and Bi, Sn and Fe doped ZnO films were taken from the literature, which were deposited on glass substrates using the ultrasonic spray and spray pyrolysis technique. The model proposed to calculate the band gap energy of undoped and doped ZnO thin films were investigated. The relation between the experimental data and theoretical calculations with precursor molarities suggests that the band gap energy is predominantly estimated by the Urbach energy, concentration of ZnO solution and doping level. The measurements by these proposed models are in qualitative agreement with the experimental data, it is shown that the high correlation coefficients were found in the range 0.94–0.99. Thus it is shown that the relative error for undoped film in all calculations are smaller than 4%, however, it was found that after calculating the relative error of the optical gap energy of doped films are improved which the maximum enhancement of minimum error was found at Bi and Sn doped ZnO thin films with 2,345% and 3,072%, respectively. It was confirmed that these models are suitable for calculation of optical properties with varying of some parameters. The decrease in the relative errors of undoped to doped films can be explained by the good optical properties which can be observed in the fewer defects and less disorder.

References

[1] Aoun Y., Benhaoua B., Gasmi B., Benramache S., Study the structural, optical and electrical properties of sprayed Zinc oxide (ZnO) thin films before and after annealing temperature, Main Group Chemistry 2015, 14, 27–33 DOI: 10.3233/MGC-140150Search in Google Scholar

[2] Belahssen O., Benramache S., Benhaoua B., Effect of Urbach energy with precursor molarity on the crystallite size in undoped ZnO thin film, Main Group Chemistry 2014, 13, 343–352 DOI: 10.3233/MGC-140146Search in Google Scholar

[3] Yilmaz M., Investigation of characteristics of ZnO: Ga nanocrystalline thin films with varying dopant content, Materials Science in Semiconductor Processing 2015, 40, 99–106 http://dx.doi.org/10.1016/j.mssp.2015.06.03110.1016/j.mssp.2015.06.031Search in Google Scholar

[4] Kushwaha S., Bahadur L, Studies of structural and morphological characteristics of flower-like ZnO thin film and its application as photovoltaic material, Optik 2013,124, 5696–5701 http://dx.doi.Org/10.1016/j.ijleo.2013.04.01910.1016/j.ijleo.2013.04.019Search in Google Scholar

[5] Sonawane B.K., Shelke V., Bhole M.P., Patii D.S., Structural, optical and electrical properties of cadmium zinc oxide films for light emitting devices, Journal of Physics and Chemistry of Solids 2011, 72, 1442–1446 http://dx.doi.Org/10.1016/j.jpcs. 2011.08.02210.1016/j.jpcs.2011.08.022Search in Google Scholar

[6] Aydin H., El-Nasser H.M., Aydin C, Al-Ghamdi Ahmed. Α., Yakuphanoglu F., Synthesis and characterization of nanostructured undoped and Sn-doped ZnO thin films via sol-gel approach, Applied Surface Science 2015, 350,109–114 http://dx.doi.org/10.1016/j.aps use.2015.02.18910.1016/j.apsusc.2015.02.189Search in Google Scholar

[7] Sonawane B.K., Bhole M.P., Patii D.S., Effect of magnesium incorporation in zinc oxide films for optical waveguide applications, Physica B: Condensed Matter 2010, 405,1603–1607 http://dx.doi.org/10.1016/j.physb.2009.12.05010.1016/j.physb.2009.12.050Search in Google Scholar

[8] Lee J., Park Y.S., Characteristics of Al-doped ZnO films annealed at various temperatures for In GaZnO-based thin-film transistors, Thin Solid Films 2015, 587, 94–99 http://dx.doi.org/10.1016/j.tsf.2015.04.01210.1016/j.tsf.2015.04.012Search in Google Scholar

[9] Matsunami N., Itoh M., Kato M., Okayasu S., Sataka M., Kakiuchida H., Growth of Mn-doped ZnO thin films by rf-sputter deposition and lattice relaxation by energetic ion impact, Applied Surface Science 2015, 350, 31–37 http://dx.doi.Org/10.1016/j.apsusc.2015.04.01610.1016/j.apsusc.2015.04.016Search in Google Scholar

[10] Lv P., Lin L, Zheng W., Zheng M., Lai F., Photosensitivity of ZnO/Cu 2 0 thin film heterojunction, Optik 2013, 124, 2654–2657 http://dx.doi.Org/10.1016/j.ijleo.2012.07.04010.1016/j.ijleo.2012.07.040Search in Google Scholar

[11] Xian F., Miao Κ., Bai X., Ji Y, Chen F., Li X., Characteraction of Ag-doped ZnO thin film synthesized by sol-gel method and its using in thin film solar cells, Optik 2013,124, 4876–4879 http://dx.doi.org/10.1016/j.ijleo.2013.02.03410.1016/j.ijleo.2013.02.034Search in Google Scholar

[12] Shelke V., Sonawane B.K., Bhole M.P., Patii D.S., Effect of annealing temperature on the optical and electrical properties of aluminum doped ZnO films, Journal of Non-Crystalline Solids 2009, 355, 840–843 http://dx.doi.Org/10.1016/j.jnoncrysol.2009.04.01810.1016/j.jnoncrysol.2009.04.018Search in Google Scholar

[13] Saha S., Tomar M., Gupta V., Influence of stress in ZnO thin films on its biosensing application, Enzyme Microbial Technology 2015, 79, 63–69 http://dx.doi.Org/10.1016/j.enzmictec.2015.07.00810.1016/j.enzmictec.2015.07.008Search in Google Scholar

[14] Shelke V., Bhole M.P., Patii D.S., Open air annealing effect on the electrical and optical properties of tin doped ZnO nanostructure, Solid State Sciences 2012,14, 705–710 http://dx.doi.org/10.1016/j.solidstatesciences.2012.03.02310.1016/j.solidstatesciences.2012.03.023Search in Google Scholar

[15] Benramache S., Benhaoua B., Influence of Urbach Energy with Solution Molarity on the Electrical Conductivity in Undoped ZnO Thin Films, Journal Nano- and Electronic Physics 2016, 8, 02025–4 DOI: 10.21272/jnep.8(2).02025Search in Google Scholar

[16] Benramache S., Benhaoua B., Belahssen O., A Comparative Study the Calculation of the Optical Gap Energy and Urbach Energy in Undoped and Indium Doped ZnO Thin Films, Journal Nano- and Electronic Physics 8, 2016, 01008–510.21272/jnep.8(1).01008Search in Google Scholar

[17] Benramache S., Arif Α., Belahssen O., Guettai Α., Study on the correlation between crystallite size and optical gap energy of doped ZnO thin film, Journal of Nanostructure in Chemistry 2013, 3, 80–5 doi:10.1186/2193-8865-3-80Search in Google Scholar

[18] Benharrats F., Zitouni K., Kadri A., Gil B., Determination of piezoelectric and spontaneous polarization fields in quantum wells grown along the polar< 0001> direction, Superlattices and Microstructures 2010, 47, 592–596 http://dx.doi.Org/10.1016/j.spmi.2010.01.00710.1016/j.spmi.2010.01.007Search in Google Scholar

[19] Benramache S., Gareh S., Benhaoua B., Darsouni Α., Belahssen 0., Ben Temam Η., Fabrication and Characterisation of ZnO Thin Film by Sol-Gel technique, Journal of Chemistry and Materials Research 20115, 2, 59–6210.2478/awutp-2019-0006Search in Google Scholar

[20] Vernardou D., Kenanakis G., Couris S., Manikas A.C., Voyiatzis G.A., Pemble M.E., Koudoumas E., Katsarakis N., The effect of growth time on the morphology of ZnO structures deposited on Si (100) by the aqueous chemical growth technique, Journal of Crystal Growth 2007, 308, 105–109 http://dx.doi.org/10.1016/j.jcrysgro.2007.07.03210.1016/j.jcrysgro.2007.07.032Search in Google Scholar

[21] Ko YD., Kim K.C., Kim Y.S., Effects of substrate temperature on the Ga-doped ZnO films as an anode material of organic light emitting diodes, Superlattices and Microstructures 2012, 51, 933–941 http://dx.doi.Org/10.1016/j.spmi.2012.03.01210.1016/j.spmi.2012.03.012Search in Google Scholar

[22] Keskenler E.F., Turgut G., S. Dogǎn, Investigation of structural and optical properties of ZnO films co-doped with fluorine and indium, Superlattices and Microstructures 2012, 52, 107–115 http://dx.doi.Org/10.1016/j.spmi.2012.04.00210.1016/j.spmi.2012.04.002Search in Google Scholar

[23] Ting C.C., Li C.H., Kuo C.Y, Hsu C.C., Wang H.C., Yang M.H., Compact and vertically-aligned ZnO nanorod thin films by the low-temperature solution method, Thin Solid Films 2010,518,4156–4162 http://dx.doi.Org/10.1016/j.tsf.2009.ll.08210.1016/j.tsf.2009.11.082Search in Google Scholar

[24] Marotti R.E., Giorgi P., Machado G., Dalchiele E.A., Crystallite size dependence of band gap energy for electrodeposited ZnO grown at different temperatures, Solar Energy Materials & Solar Cells 2006, 90, 2356–2361 http://dx.doi.Org/10.1016/j.solmat.2006.03.00810.1016/j.solmat.2006.03.008Search in Google Scholar

[25] Shelke V., Sonawane Β.Κ., Bhole M. P., Patii D. S., Electrical and optical properties of transparent conducting tin doped ZnO thin films, Journal of Materials Science: Materials in Electronics 2012, 23, 451–456 doi:10.1007/sl0854-011-0462-2Search in Google Scholar

[26] Benramache S., Benhaoua B., Khechai N., Chabane F., Elaboration and characterisation of ZnO thin films, Matériaux & Techniques 2012,100, 573–580 http://dx.doi.org/10.1051/mattech/201205210.1051/mattech/2012052Search in Google Scholar

[27] Benramache S., Benhaoua B., Influence of annealing temperature on structural and optical properties of ZnO: In thin films prepared by ultrasonic spray technique, Superlattices and Microstructures 2012, 52,1062–1070 http://dx.doi.Org/10.1016/j.spmi.2012.08.00610.1016/j.spmi.2012.08.006Search in Google Scholar

[28] Benramache S., Belahssen 0., Guettai Α., Arif Α., Correlation between electrical conductivity—optical band gap energy and precursor molarities ultrasonic spray deposition of ZnO thin films, Journal of Semiconductors 2013, 34, 113001–5 DOI: 10.1088/1674-4926/34/11/113001Search in Google Scholar

[29] Gahtar A. et al. Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique, Journal of Semiconductors 2013, 34, 073001-5 DOI: 10.1088/1674-4926/34/7/073002Search in Google Scholar

[30] Benhaoua B. et al. The structural, optical and electrical properties of nanocrystalline ZnO: Al thin films, Superlattices and Microstructures 2014, 68, 38–47 http://dx.doi.Org/10.1016/j.spmi.2014.01.00510.1016/j.spmi.2014.01.005Search in Google Scholar

[31] Chouikh F., Beggah Y., Aida M. S., Optical and electrical properties of Bi doped ZnO thin films deposited by ultrasonic spray pyrolysis, Journal of Materials Science: Materials Electronic 2011, 22, 499–505 doi:10.1007/sl0854-010-0167-ySearch in Google Scholar

[32] Zebbar N., Kheireddine Y., Mokeddem K., Hafdallah Α., Kechouane M., Aida M.S., Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic spray, Materials Science in Semiconductor Processing 2011,14, 229–234 http://dx.doi.Org/10.1016/j.mssp.2011.03.00110.1016/j.mssp.2011.03.001Search in Google Scholar

[33] llican S., Caglar Y., Caglar M., Yakuphanoglu F., Electrical conductivity, optical and structural properties of indium-doped ZnO nanofiber thin film deposited by spray pyrolysis method, Physica E 2006, 35,131–138 http://dx.doi.Org/10.1016/j.physe.2006.07.00910.1016/j.physe.2006.07.009Search in Google Scholar

[34] Rahal A. et al. Substrate Temperature Effect on Optical property of ZnO Thin Films, Engineering Journal 2014, 18, 81–88 DOI:10.4186/ej.2014.18.2.81Search in Google Scholar

[35] Zhu B.L., Sun X.H., X.Z. et al. The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition, Vacuum 2008, 82, 495–500 http://dx.doi.org/10.1016/j.vacuum.2007.07.05910.1016/j.vacuum.2007.07.059Search in Google Scholar

[36] Benramache S., Benhaoua B., Influence of substrate temperature and Cobalt concentration on structural and optical properties of ZnO thin films prepared by Ultrasonic spray technique, Superlattices and Microstructures 2012, 52, 807–815 http://dx.doi.org/10.1016/j.spmi.2012.06.00510.1016/j.spmi.2012.06.005Search in Google Scholar

[37] Hafdallah Α., Yanineb F., Aida M.S., Attaf Ν., In doped ZnO thin films, Journal of Alloys and Compounds 2011, 509, 7267–7270 http://dx.doi.Org/10.1016/j.jallcom.2011.04.05810.1016/j.jallcom.2011.04.058Search in Google Scholar

[38] Belahssen 0., Ben Temam Η., Benramache S., A Study the Calculation of the Optical Gap Energy and Urbach Energy in the Semiconductor Doping, International Journal of Renewable Energy Research 2015, 5,177–182Search in Google Scholar

[39] Benramache S., Benhaoua B., Belahssen 0., The Effect of Nickel Doping on Calculation of the Optical Gap Energy and Urbach Energy in ZnO Thin Films, Journal of Chemistry and Materials Research 2015, 4,19–24Search in Google Scholar

[40] kumar N.S., Bangera K.V., Anandan C, Shivakumar G.K., Properties of ZnO: Bi thin films prepared by spray pyrolysis technique, Journal of Alloys Compounds 2013, 578, 613–619 http://dx.doi.org/10.1016/j.jallcom.2013.07.03610.1016/j.jallcom.2013.07.036Search in Google Scholar

[41] Aksoy S., Caglar Y, llican S., Caglar M, Effect of Sn dopants on the optical and electrical properties of ZnO films, Optica Applicata 2010, 40, 7–14Search in Google Scholar

[42] Prajapati CS., Kushwaha Α., Sahay P.P., Optoelectronics and formaldehyde sensing properties of tin-doped ZnO thin films, Applied Physic A 2013,113, 651–662 doi:10.1007/s00339-013-7589-3Search in Google Scholar

[43] Prajapati CS., Kushwaha Α., Sahay P.P., Influence of Fe doping on the structural, optical and acetone sensing properties of sprayed ZnO thin films, Materials Research Bulletin 2013, 48, 2687–2695 http://dx.doi.Org/10.1016/j.materresbull.2013.03.02610.1016/j.materresbull.2013.03.026Search in Google Scholar

[44] Prajapati CS., Kushwaha Α., Ρ. Sahay P., Experimental investigation of spray-deposited Fe-doped ZnO nanoparticle thin films: structural, microstructural, and optical properties, Journal of Thermal Spray Technology 2013, 22, 1230–1241 doi:10.1007/sll666-013-9973-0Search in Google Scholar

Received: 2015-8-24
Accepted: 2016-9-29
Published Online: 2016-12-30
Published in Print: 2016-1-1

© 2016 S. Benramache and B. Benhaoua

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Downloaded on 28.3.2024 from https://www.degruyter.com/document/doi/10.1515/phys-2016-0080/html
Scroll to top button