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Zeitschrift für Kristallographie - Crystalline Materials

Editor-in-Chief: Pöttgen, Rainer

Ed. by Antipov, Evgeny / Boldyreva, Elena V. / Friese, Karen / Huppertz, Hubert / Jahn, Sandro / Tiekink, E. R. T.


IMPACT FACTOR 2017: 1.263
5-year IMPACT FACTOR: 2.057

CiteScore 2017: 2.65

Online
ISSN
2196-7105
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Volume 219, Issue 2

Issues

Intensity distribution of the eight-beam case of the Si-888 reflection in backscattering geometry

Stefan Haubold / Klaus D. Liss / Rainer Hock / Andreas Magerl / Maren Lorenzen / Michael Krisch
Published Online: 2009-09-25 | DOI: https://doi.org/10.1524/zkri.219.2.81.26319

Abstract

The eight-beam case of the Si-888 reflection in backscattering has been studied by scanning the eight simultaneously excited reflections Si 888, Si 088, Si 880, Si 808, Si 800, Si 080, Si 008 and Si 000 in wavelength and two independent rocking angles. Largely different widths of the individual reflection profiles found are explained from the Ewald representation as suggested by kinematic diffraction theory. The intensity profiles demonstrate a coupling of the eight simultaneously excited wave fields as expected from dynamic diffraction theory.

About the article

Published Online: 2009-09-25

Published in Print: 2004-02-01


Citation Information: Zeitschrift für Kristallographie - Crystalline Materials, Volume 219, Issue 2, Pages 81–87, ISSN (Online) 2196-7105, ISSN (Print) 2194-4946, DOI: https://doi.org/10.1524/zkri.219.2.81.26319.

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