Abstract
Sputtering yields and damage depths caused in SiO2 glass and thin SiO2 glass-layers by Ne-, Ar-, and Xe-ions of 5.6 keV are reported for the angles of incidence 0°, 45°, and 65°. Nuclear specific energy losses are derived from the mean damage depths. The results are compared with the theory of Brandt and Laubert predicting proportionality of sputtering yield and nuclear specific energy loss. For Ar- and Xe-ions satisfactory agreement is found.
Comparison of measured sputtering yields with yields calculated from experimental specific energy losses allows for corrections of the mean damage depths as obtained with the luminescence method applied earlier.
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