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Zeitschrift für Naturforschung A

A Journal of Physical Sciences

Editor-in-Chief: Holthaus, Martin

Editorial Board: Fetecau, Corina / Kiefer, Claus

12 Issues per year


IMPACT FACTOR 2016: 1.432

CiteScore 2017: 1.30

SCImago Journal Rank (SJR) 2017: 0.403
Source Normalized Impact per Paper (SNIP) 2017: 0.632

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1865-7109
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Volume 63, Issue 3-4

Issues

Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

Ahmet Faruk Ozdemir / Adnan Calik
  • Department of Mechanical Education, Technical Education Faculty, Suleyman Demirel University, Isparta, Turkey
  • Other articles by this author:
  • De Gruyter OnlineGoogle Scholar
/ Guven Cankaya / Osman Sahin / Nazim Ucar
Published Online: 2014-06-02 | DOI: https://doi.org/10.1515/zna-2008-3-414

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

Keywords: Schottky Barrier Diode; Barrier Height; Ideality Factor; Indentation; Fermi Level Pinning

About the article

Received: 2007-10-01

Published Online: 2014-06-02

Published in Print: 2008-04-01


Citation Information: Zeitschrift für Naturforschung A, Volume 63, Issue 3-4, Pages 199–202, ISSN (Online) 1865-7109, ISSN (Print) 0932-0784, DOI: https://doi.org/10.1515/zna-2008-3-414.

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© 1946 – 2014: Verlag der Zeitschrift für Naturforschung. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License. BY-NC-ND 3.0

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