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Zeitschrift für Physikalische Chemie

International journal of research in physical chemistry and chemical physics

Editor-in-Chief: Rademann, Klaus


IMPACT FACTOR 2018: 0.975
5-year IMPACT FACTOR: 1.021

CiteScore 2018: 1.20

SCImago Journal Rank (SJR) 2018: 0.327
Source Normalized Impact per Paper (SNIP) 2018: 0.391

Online
ISSN
2196-7156
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Volume 230, Issue 4

Issues

Crystalline Quality and Structure of MBE-Grown Ferromagnetic Semiconductor ZnSnAs2:Mn Thin Films Revealed by High-Resolution X-ray Diffraction Measurements

Naotaka Uchitomi
  • Corresponding author
  • Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomiokacho, Nagaoka, 940-2188, Japan
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/ Hideyuki Toyota
  • Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomiokacho, Nagaoka, 940-2188, Japan
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/ Toshio Takahashi
  • The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
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Published Online: 2016-01-27 | DOI: https://doi.org/10.1515/zpch-2015-0649

Abstract

The crystalline structure and quality of ZnSnAs2:Mn films grown by molecular beam epitaxy (MBE) on InP substrates are two of the most important issues in preparing spintronic structures such as magnetic quantum wells and spin-based transistors. We conducted high-resolution X-ray diffraction (XRD) measurements to clarify the crystalline structure of ZnSnAs2:Mn thin films. The XRD measurements reveal with very high accuracy that the samples have a sphalerite structure with high epitaxial quality. These results, within the limits of measurement accuracy support the previous assumption that ZnSnAs2:Mn thin films are coherently clustered ferromagnetic semiconductors without breaking the continuity of the sphalerite structure, leading to ferromagnetism with a high Curie temperature close to that of zincblende MnAs.

Keywords: Ferromagnetic Semiconductor; High-Resolution X-ray Diffraction

About the article

Accepted: 2016-01-06

Received: 2015-06-25

Published Online: 2016-01-27

Published in Print: 2016-04-28


Citation Information: Zeitschrift für Physikalische Chemie, Volume 230, Issue 4, Pages 499–508, ISSN (Online) 2196-7156, ISSN (Print) 0942-9352, DOI: https://doi.org/10.1515/zpch-2015-0649.

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